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    SIHL640 Search Results

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    Vishay Siliconix SIHL640S-GE3

    LOGIC MOSFET N-CHANNEL 200V
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    DigiKey SIHL640S-GE3 Reel 1,000
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    • 1000 $0.87
    • 10000 $0.80
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    Vishay Siliconix SIHL640STRL-GE3

    LOGIC MOSFET N-CHANNEL 200V
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    DigiKey SIHL640STRL-GE3 Reel 800
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    • 100 -
    • 1000 $0.87
    • 10000 $0.81
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    RS SIHL640STRL-GE3 Bulk 100
    • 1 -
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    • 100 $5.46
    • 1000 $4.01
    • 10000 $4.01
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    Vishay Siliconix SIHL640STRR-GE3

    LOGIC MOSFET N-CHANNEL 200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHL640STRR-GE3 Reel 800
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    • 1000 $0.87
    • 10000 $0.81
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    Vishay Intertechnologies SIHL640STRL-GE3

    MOSFETs LOGIC MOSFET N-CHANNEL 200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHL640STRL-GE3
    • 1 $2.72
    • 10 $1.74
    • 100 $1.18
    • 1000 $0.87
    • 10000 $0.78
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    Bristol Electronics SIHL640STRL-GE3 553
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    Quest Components SIHL640STRL-GE3 442
    • 1 $3.52
    • 10 $3.52
    • 100 $3.52
    • 1000 $1.45
    • 10000 $1.45
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    TME SIHL640STRL-GE3 1
    • 1 $1.83
    • 10 $1.64
    • 100 $1.30
    • 1000 $1.18
    • 10000 $1.18
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    IBS Electronics SIHL640STRL-GE3 800 800
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    • 1000 $1.07
    • 10000 $1.02
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    Vishay Intertechnologies SIHL640S-GE3

    MOSFETs LOGIC MOSFET N-CHANNEL 200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHL640S-GE3
    • 1 $2.72
    • 10 $1.74
    • 100 $1.18
    • 1000 $0.87
    • 10000 $0.78
    		Get Quote
    Find more SIHL640 price and stock on Findchips.com

    SIHL640 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRL640

    Abstract: SiHL640 SiHL640-E3
    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRL640 SiHL640-E3 PDF

    Contextual Info: IRL640_RC, SiHL640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRL640 SiHL640 AN609, CONFIGURATIp-10 4514m 1503m 9659m 8331m PDF

    IRL640S

    Abstract: SMD-220 S10 SMD MARKING
    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		IRL640S, SiHL640S SMD-220 2002/95/EC 11-Mar-11 IRL640S SMD-220 S10 SMD MARKING PDF

    SiHL640S

    Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		IRL640S, SiHL640S SMD-220 SMD-220 18-Jul-08 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c PDF

    IRL640

    Abstract: IRL640 equivalent SiHL640 SiHL640-E3
    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 O-220 O-220 18-Jul-08 IRL640 IRL640 equivalent SiHL640-E3 PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRL640

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRL640, SiHL640 O-220 O-220 12-Mar-07 IRL640 PDF

    AN609

    Abstract: IRL640S
    Contextual Info: IRL640S_RC, SiHL640S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRL640S SiHL640S AN609, 8292m 0633m 4369m 5016m 2686m 2196m 8257m AN609 PDF

    irfl640

    Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		IRL640, SiHL640 O-220 O-220 18-Jul-08 irfl640 IRL640 part marking ab SiHL640-E3 PDF

    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		IRL640S, SiHL640S 2002/95/EC SMD-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S10 SMD MARKING

    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		IRL640S, SiHL640S 2002/95/EC SMD-220 18-Jul-08 S10 SMD MARKING PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		IRL640S, SiHL640S SMD-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    smd diode B3

    Abstract: 1461 smd
    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		IRL640S, SiHL640S 2002/95/EC SMD-220 11-Mar-11 smd diode B3 1461 smd PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRL640

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL640 PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRL640, SiHL640 2002/95/EC O-220AB O-220AB 11-Mar-11 PDF