SI2309DS-T1 Search Results
SI2309DS-T1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| IXF1002EDT-G |
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IXF1002 - Dual Port Gigabit Ethernet Controller |
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| AM79C961AVI |
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Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless |
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| IXF1002ED |
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IXF1002ED - Dual Port Gigabit Ethernet Controller |
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| IXF1002EDT |
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IXF1002 - Dual Port Gigabit Ethernet Controller |
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| IXF1002ED-G |
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IXF1002ED - Dual Port Gigabit Ethernet Controller |
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SI2309DS-T1 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2309DS-T1 | Vishay Intertechnology | P-Channel 60-V (D-S) MOSFET | Original | 64.11KB | 4 | ||
| SI2309DS-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 1.25A SOT23-3 | Original | 8 |
SI2309DS-T1 Price and Stock
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Vishay Siliconix SI2309DS-T1-E3MOSFET P-CH 60V 1.25A SOT23-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2309DS-T1-E3 | Reel | 3,000 |
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SI2309DS-T1-E3 | Bulk | 3,000 |
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SI2309DS-T1-E3 | 1,142 |
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Vishay Intertechnologies SI2309DS-T1-GE3P Ch Mosfet; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.25A; Drain Source Voltage Vds:-60V; On Resistance Rds(On):275Mohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W Rohs Compliant: Yes |Vishay SI2309DS-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2309DS-T1-GE3 | Reel | 3,000 |
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Vishay Dale SI2309DS-T1-E3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2309DS-T1-E3 | 1,442 |
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Vishay Intertechnologies SI2309DS-T1-E31250 MA, 60 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB,LEAD FREE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2309DS-T1-E3 | 88 |
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Vishay Intertechnologies SI2309DST1P-CHANNEL 60-V (D-S) MOSFET Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2309DST1 | 5,135 |
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