SIHFIBF30G Search Results

IRFIBF30GPBF

Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

IRFIBF30GPBF

Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: IRFIBF30G_RC, SiHFIBF30G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

IRFIBF30G

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm