014 IR MOSFET TRANSISTOR Search Results

IRFM054

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFM460

Contextual Info: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFM044

Contextual Info: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFMG40

Contextual Info: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFM360

Contextual Info: PD - 90712B POWER MOSFET THRU-HOLE TO-254AA IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRF*260

Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: Provisional Data Sheet No. PD-9.1551 IQR Rectifier HEXFET POWER MOSFET IRFN350 N - CHA N N E L Product Summary 400 Volt, 0.315fi HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­ cient geometry achieves very low on-state resistancecom­

Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: Provisional Data Sheet No. PD-9.1551 International IOR Rectifier HEXFET POWER MOSFET IRFN350 N -C H A N N E L 400 Volt, 0.3150 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors. The effi­ cient geometry achieves very low on-state resistancecombined with high transconductance.

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

MOSFET DRIVER circuits

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRGMC40F

Abstract: bipolar transistor td tr ts tf
Contextual Info: PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses

bipolar transistor td tr ts tf

Abstract: IRF 260 N IRGMC30F
Contextual Info: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IRF 260 N

Abstract: MOSFET 1000v 30a IRGMC50F
Contextual Info: PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses

IRGMC50U

Contextual Info: PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses

IRGMC30U

Abstract: 90715
Contextual Info: PD -90715B IRGMC30U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses