00OOOO Search Results

SD313

Abstract: 310N
Contextual Info: REV I S IONS LTR DESCRIPTION A RELEASE TO D O C U M E N T CONTROL E.C.N. DATE 12384 02/29/2000 Al 22.86 1.27 BALL BY/APP'D TL/MJL CORNER- TYP TYP 00OOOOOOOOOOOOOOOO0 ooooooooooooooooooo ooooooooooooooooooo OOO OOO OOO OOO OOO OOO OOO OOO OOO OOO OOO OOO OOO

SPS 761

Contextual Info: INITIAL DRAWING RELEASE FIXED INSULATOR THICKNESS FROM .062 TO .116. 1.550 426 761 5.7.92 I 5.26.93 14 EQ. SPS. -@ .1 0 0 ± .0 0 5 = 1 . 4 0 0 TOL. N O N -A C C U M . .075 .116<^| r .337 TYP. .075 1. •OOOOOOOOOOOOOOÔ 00OOOOOOO0OO0O0 OODOODOOOOOOODO QQQQ/

91564

Contextual Info: SCALE 4:1 S P E C I F I CAT I O N S : BUSHING - BRASS, NICKEL PLATED CUSTOMER DRAWING SCHEMATIC C IR C U IT ☆ STAR SYMBOL S P R I N G - N I C K E L S I L V E R , S P R I N G TEMPERED DENOTES C R I T I C A L DIMENSION UNLESS OTHERWISE S P E C I F I E D

GE-250

Abstract: ul94v-0
Contextual Info: SEE 0. 157 [4,00] REF NOTE I 0.551 [ 1 4 , oo : REF SCALE 4:1 0.012 [0,30] TYP 5 REF REF SPECIFICATIONS ELECTRICAL: CONTACT RES ISTANCE: INSULATION DIELECTRIC 20 M I L L I OHMS M A X , INITIAL 50 M I L L I O H MS M A X , A F T E R L I F E R E S I S T A N C E : 50 M E G A O H M S M I N . A T 5 0 0 V D C

DSUB1.385-2H9

Abstract: HDR2X10 DB9 DSUB1.385-2H9 385-2H9 Header, 10-Pin CON8 CON7-4 polarized capacitor em marin KSC421J
Contextual Info: R EM MICROELECTRONIC - MARIN SA EMDB6812 EMDB6812 V1.1 MANUAL VERSION 1.0 CONTENTS 1. 2. INTRODUCTION . 2 HARDWARE DESCRIPTION . 2

P-FBGA107-0912-0

Contextual Info: P—FBGA107—091S—0.80CZ Unit' nn a ^ 5. 6 1. 4MAX rn rs i 0. 33±0. 05 fPT8~| rc rri O CD ! CD o o o o olcp o d o o o o o o o j o o o 0-0ooooolooooo ooooolooooo I _o OOO Ojp 0.0 oo r oooo'oToobo-eooooojooooo 1 OOOOOIOOOOO o o o o o j o o o o-©o o o o p o o o-eo-©-

35RAPC

Contextual Info: SPFCI F I CAT I O N S : ELECTRICAL: CONTACT RES ISTANCE: INSULATION DIELECTRIC 20 M I L L I OHMS M A X . INITIAL 100 M I L L I OHMS M A X . A F T E R L I F E RESISTANCE: 100 ME G A O H MS M I N . WI T H S T A N D I N G V O L T A G E : 250 V A C. MECHANICAL:

Contextual Info: mr*n TC-5840B 3Kfi May 1992 M * * * TI Sn Vi S, ^ ^ IIA V V* V' ui 4H- Ä Fül TJ H H N I en en + OI o o° en o o° V ;min >fr Pf H 13 tu H U V V v* v* o TTjfli Pf A ! >-s 3 muti Ftl FF1 o-1 c s M » g o u V Vf H A 1 >i nu 3 Tn ïliH ty p m V Vj SS TTTjìy

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

MS-034

Abstract: 2-23MM
Contextual Info: 4X 0.5 ±0.1 NOTES: 1. UNLESS SOLDER OTHERWISE BALL Sn 2. D I M E N S I O N I S M E A S U R E D AT T H E P A R A L L E L TO PR I M A R Y D A T U M N . 3. THE MOLD S U R F A C E A R E A CORNER I D E N T I F I C A T I O N . 4. REFERENCE JEDEC D IM E N S IO N S A R E

KM48V8004AK

Contextual Info: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: SPFCI F I CAT I O N S : ELECTRICAL: CONTACT R E S I S T A N C E : 2 0 M I L L I OHMS MAX. I N I T I A L 100 M I L L I OHMS MAX. A F T E R L I F E I N S U L A T I O N R E S I S T A N C E : 100 MEGAOHMS M I N . D I E L E C T R I C WI T H S T A N D I N G V OL T AGE : 25 0 VAC.

LT5233

Abstract: bt458 C458 TR C458 L75A FR52 RS-343 RS-343A C32-33 amd k10
Contextual Info: A D V A N C E D MI CR O D E V I C E S 2ÔE D ^ • 0257555 0G3SG55 1 ■ AMD Am81C451/458 ^ 2S:< CMOS Color Palette PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • • • Plug-In Replacement for Bt451 Bt450 Available in 80-, 110-, 125-, 165-MHz versions

bd847

Abstract: AM79C830 bdp 286 NP10 "Advanced Micro Devices" rafi date BdP 285 AMD Supernet
Contextual Info: P R E L IM IN A R Y Advanced Micro Devices Am79C830 FORMAC Plus DISTINCTIVE CHARACTERISTICS • ■ Im p lem en ts the FDDI M edia Access Control M A C layer protocol for ISO standard 9314-2 ■ Pointers to claim and beacon fram es ■ Su pp orts transm it linked-list addressing

mcm511000ap10

Abstract: M511000 M511000A mcm511000a MCM511000AZ10 Z13i MCM511000AZ80 M-511 511000a CM511000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM511000A MCM51L1000A Advance Information 1 M x 1 C M O S Dynam ic RAM The MCM511000A is a 1.0/* CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CMOS silicon-gate process

Contextual Info: J L 0.472 [ 12, 00] RE F 0 . 59 1 is, oo: REF NOT E S I ELECTRICAL: CONT A CT R E S I S T A N C E : 0 . 0 3 0 OHMS MAX I N I T I A L , 0. 100 OHMS MAX A F T E R L I F E T E S T . I N S U L A T I O N R E S I S T A N C E : 100 MEGAOHMS MI N § 500 VDC D I E L E C T R I C WI T H S T A N D I N G V O L T A G E : 500 VAC

TD04R SMG

Abstract: MFZ Series TD04R
Contextual Info: Ijg & J PART NUMBERING SYSTEM Expressed in microfarads. Capacitance 0.1 4.7|j F 10yF 100[JF 10OOpF Indicates a basic capacitor design. TC04R SMG Taping code Series = = = = = Indicates the tolerance of a nominal capacitance value. Code Tolerance Code R1 4R7

Contextual Info: Customer Information Sheet DRAWING No.: M 8 3 -LFC IF2N08-0400-325 SHEET 2 OF T T r 2 IN D OUBT - ASK I C I NOT TO SCALE THIRD ANGLE I PROJECTION ALL DIMENSIONS I N mm SPECIFICATIONS: MATERIAL: MOULDING = G L A S S - F I L L E D PPS, UL 9 4 V -0 , BLACK

Phoenix BIOS manual f.34

Abstract: memory interfacing to mp 8085 8086 8088 ats doc hex rv 8086 hex bcd assembler conversion TMS7000 assembler guide 68hc11 instruction set 6805 motorola basics of 8085 microprocessor f68hc11 RCA handbook
Contextual Info: 5 n s ^ n ARCHIMEDES S O F T W A R E L_ - Archimedes C-6811 Cross-Compiler Kit For 68HC11 Microcontroller Development Third Edition April, 1992 C o p yrig h t c 1 9 8 7 ,1 9 9 2 A rc h im e d e s S o ftw are, Inc. Archimedes Software, Inc., San Francisco, CA.

35RAPC

Contextual Info: SPECIFICATIONS ELECTRICAL: CONTACT RES IST AN CE: INSULATION DIELECTRIC 20 M I L L I OHMS M A X , INITIAL 50 M I L L I O H M S M A X , A F T E R L I F E R E S I S T A N C E : 50 M E G A O H M S M I N . A T 5 0 0 V DC W I T H S T A N D I N G V O L T A G E : 250 VAC

Contextual Info: NOTES I ELECTRICAL: CONTACT RES ISTANCE: INSULATION DIELECTRIC 20 M I L L I OHMS M A X . INITIAL 1 00 M I L L I OHMS M A X . A F T E R L I F E RESISTANCE: 100 ME G A O H MS M I N . WI T H S T A N D I N G V O L T A G E : 250 V A C . MECHANICAL: LIFE: 5000 C Y C L E S

35RAPC2AV

Contextual Info: 0.16 [4,0] REF 0.02 [0,5] REF 4 0.24: 6 , 1] - 0.21 [5,3] • 0 . 23 5,8: ft- 0 SPECIFICATIONS: -FRONT OF B U S H I N G 1 . CONTACT R E S I S T A N C E : 20 m O 2. INSULATION RESISTANCE: 3. D I E L E C T R I C STRENGTH: 4. LIFE 5. 6. 7. 100 MAX mO 2 5 0 V AC

IC-7750

Abstract: uPD17001 10X14 JUPD6700 LED10 PD17001 PD6700 PD75516 uPD6700 tl 5069
Contextual Info: x-51•i/-S NEC ^ M O S & 8 II 1 E& M O S Integrated Circuit «PD6700 Ju P D 6 7 0 0 i^ ^ x < "J 0 M l < r > ^ % m . 7 ^ (FIP * $ < L / ^ H ; K -7 * ^ H ^ ' C M O S t i i i C O ^ K 7 < AT* To ^ U / J v ^ 5 6 t f> QFPT48 fci-y h • '> 7 h U v * £ , S n n 'S f o

Augat PGm

Abstract: PGM068-1Al Motorola 68060 PGM168-7A1715-V pgm068 p54cm 12X12 22X22 PPS238-7A1916-V INTEL P24T
Contextual Info: PGM & PPS Series Pin G rid A rray Sockets f p p p 1! PPS238-7A1916-V PGM168-7A1715-V FEATURES: PERFORMANCE SPECIFICATIONS: • L IF & S U P E R L IF 1” Low insertion and withdrawal force contacts M EC H A N IC A L • Non-wicking closed bottom, precision sleeve protects 100% against flux