310N Search Results

MTE-H33 Series

Contextual Info: Ultraviolet Emitter Product No: M T E - H33 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-H33 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-5 hermetically sealed package with a special UV glass lens for optimum life time and

ISL21080DIH309Z-TK

Abstract: ISL21080-09 ISL21080-10 ISL21080-12 ISL21080-15 ISL21080-20 ISL21080-30 ISL21080-33 ISL21080-41 ISL21080DIH309
Contextual Info: ISL21080 Features The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typ, 1.5µA max operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2% and 50ppm/°C temperature coefficient.

Contextual Info: SMD deep UV LEDs new deep UV LEDs at 275 nm and 310 nm in diverse ceramic SMD packages link to web site datasheets: 275nm 310nm associated links LEDs optics price list find prices for the new SMD deep UV LEDs on price list page 55 ROITHNER LASERTECHNIK GmbH

Contextual Info: bEE D • m 27S2S DD37S15 bTT HNECE N E C ELECTRONICS INC J _ LASER DIODE N D L 5738P , N D L 5 7 3 8 P 1 1 310nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLEMODE FIBER DESCRIPTION NDL5738P and NDL5738P1 are 1 310 nm laser diode coaxial module w ith singlemode fiber. It incorporates InGaAs m onitor

Contextual Info: 66-SL-OL m m ià •Z T S 310NV =F X X X X ' g o o ; =f x x x * 10' =F XX * 580^-0^3-018 :XM1 ¿ H I XO0 'O'd ££¿9 -1 *6 218 : N 0 S 30N VÜ 3101 S 3H ON I Nl OSl/fr NI ’A N V a iV M3N 'O A IS 1SV 3 »dV d 02S EÜ _ > 3dV SNOISNBkNIO WSV dIHiS "IVNIWaiL OS Q20

Contextual Info: '3VP dO Ì N 3 S N 0 0 N3J.1IÜM lflOHllM a30fia0Hd3ü * 4 ? i 3 m m 39 ION N V O O N V si° 4105# o> <> SI 1VH1 N O U V W H O d N l V Odd V OddV g m d t7 M t7 E d — 0 E a 3111 i ) « NOI IV 17 • o =F T 8 ’0 T T (31VQ # u ONliVld % 1331S AO~nv 3 310N

Contextual Info: APT47F60J 600V, 49A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

JAPAN transistor

Abstract: amazing prius ALL DATASHEET CELERON intel sony 310N
Contextual Info: 2000 3105ST50NJT Amazing Twins Design Workshop Limited 1999 1 2 3 s © 3105ST50NJT Intel Celeron 3105ST50N Intel®Celeron t 3105ST50NJ Intel®Celeron ©1999-2000 Sony Communication Network Corporation All rights reserved. FLORA Prius 310N ® Prius 310N

MTE-F13 Series

Contextual Info: Ultraviolet Emitter Product No: M T E - F13 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-F13 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-39 hermetically sealed package with a special UV glass lens for optimum life time and device

47NF

Abstract: 600R CTR21 Z1 Transistor AG1170 Transistor z1 transistor z4 n 220R 270R 150nf
Contextual Info: Impedance Programming the Ag1170P ZB VIN Z2 ZT1 Z3 ZT2 Z5 Z1 Z4 Network Balance Z6 Terminal Impedance NOTE: ZB, VIN, ZT1 and ZT2 are pin connections for the Ag1170P interface. See Ag1170 datasheet for more details. Line Impedance 600R 600R+2.16uF 370R+620R//310nF

V01D

Abstract: DUPONT CONNECTOR
Contextual Info: * JO 1133« SC099 Q l/B ON «M JZIT, _ 3i0vid303a 3«im oNrwa «30V3H 310NV iHOIH aoj .*.1’ UNV6IH3T. ¡KO 1 _2ïî rSTTT s w a i S À S «row « 0 0 *>0000 V IM '••0000 t SOO’aOOOVCl *0*000 *0 10 '* 0 0 - / K -0.00 t nianBTiiwr»Kr QTMimjb tiJX«

NT1310

Abstract: LA 7683 A
Contextual Info: N E C E L E C T R O N I C S hEZ I N C » • h 4 S 7 S 2 5 0 0 3 7 ^ 0 7 1 3 W N E C E DATA SH EET NEC LA SER DIODE MODULE NDL7500P ELECTRON DEVICE 1 310nm In G a A sP M Q W -D C -P B H P U L SE D L A S E R D IO D E 14 PIN D IP M O D U L E W IT H S IN G L E M O D E FIBER

ndl5

Contextual Info: N E C ELECTRONI CS INC b2E J> • bM2 7 S2 S GDa?^? 33G « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5765P, NDL5765P1 e le c tro n dev,CE 1 310nm InGaAsP D C-PB H PULSED LA S E R DIODE 4 PIN C O A X IA L M O D ULE WITH SIN GLEM O DE FIBER D E S C R IP T IO N

Contextual Info: ISL21080 Data Sheet July 28, 2009 FN6934.0 300nA NanoPower Voltage References Features The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typ, 1.5µA max operating current. Additionally, the ISL21080 family features

zvs flyback driver

Contextual Info: APT66F60B2 APT66F60L 600V, 66A, 0.10Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

MTE-H32 Series

Contextual Info: Ultraviolet Emitter Product No: M T E - H32 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-H32 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-46 hermetically sealed package with a special UV glass lens for optimum life time and

MTE-H21 Series

Contextual Info: Ultraviolet Emitter Product No: M T E - H21 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-H21 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-46 hermetically sealed package with a special UV glass lens for optimum life time and

APT66F60B2

Abstract: APT66F60L MIC4452
Contextual Info: APT66F60B2 APT66F60L 600V, 70A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT47F60J

Abstract: MIC4452
Contextual Info: APT47F60J 600V, 49A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

MTE-F11 Series

Contextual Info: Ultraviolet Emitter Product No: M T E - F11 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-F11 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-18 hermetically sealed package with a special UV glass lens for optimum life time and device

Contextual Info: Ultraviolet Emitter Product No: M T E - S MD Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-SMD series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a SMD package with a special UV glass lens for optimum life time and device

Contextual Info: ISL21080 Features The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typ, 1.5µA max operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2% and 50ppm/°C temperature coefficient.

Contextual Info: Ultraviolet Emitter Product No: M T E 3 1 0SMD4-UV Peak Emission Wavelength: 310nm The MTE310SMD-UV UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a SMD package with a special UV glass lens for optimum life time and device

Contextual Info: APT47F60J 600V, 49A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure