00M Search Results

wickmann

Abstract: wickmann 275 Wickmann USA 195 Wickmann USA
Contextual Info: MINIATURE FUSES USE-LINKS WICKMANN m m 0-Lag 2 5Txime Series 195 10 IEC 60127-2/SS 3 0 ,0 00 • FaxBack Document # 202 • Glass tube Tim e-curre nt cha racteristic s M in -M a x L im its I EC 6 012 7- 2/S S 3 (32 . 1 00m A ) IE C 60 127 -2 /SS 3 ( 12 5 m A . 6.3 0A )

D0447

Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Contextual Info: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: samiec T M M -110-01 -T -D -S M • v » T M M -112-01-G-.H5—SM T M M -1 3 0 -0 5 -L -S -S M IMS0 S P E C IF IC A T IO N S M ates v-rsih: nf Materials: {2 ,00m m ' Insulator Material: Black Liquid Crystal Polymer Terminal Material: Phosphor B 'onze Current Rating:

028011

Contextual Info: 1 D l l b M 3 00 00 17 0 FPC MHO • C onnectors 1. 00m m P i t c h This is a range of surface mount 1.00mm pitch connectors. Contact Technical Sales for vertical termination. • Tape and reel packaging. • Actuator cover. • Low profile design. • 3 to 30 ways.

Contextual Info: Customer Information Sheet_ _ DRAW I NG No. : M 8 0 - 5 T I 00MI - 60 - 3 3 1 SHEET 2 OF IF 2 IN DOUBT - ASK NOT ΠTO SCALE | THIRD ANGLE PROJECTION | ALL DIMENSIONS IN mm SPECIFICATIONS: MATERIAL: MOULDING: POWER GLASS CONTACT: JACKSCREW; FINISH:

2N4033

Abstract: transistor 2N4033 2N4030 2N4031 2N4032 2N4030-2N4031
Contextual Info: 2N4Ö3Ö to 2N4033 J PHILIPS INTERNATIONAL 5bE D • 7110 0S b V 00M2b5b 73b Ml PHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in T O -39 metal envelopes primarily intended fo r large signal, low-noise, low-power audio frequency applications fo r industrial service.

BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAsMMIC> 00M077 37, • MGF7108A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION OUTLINE DRAWING MGF7108A is a GaAs monolithic microwave integrated circuits for Unit:millimeters use in 00MHz band power amplifiers. @ Va c FEATURES NU

Contextual Info: BB02-FQ BB02-FQ:- CUSTOMER PRODUCT specification sheet 2. 00MM B O X H E A D E R , R I G H T A N G L E , T H R O U G H H O L E T Y P E _ 6. 0 + 2 . 0 x N o o f C o n t a c t s / 2 SPECIFICATIONS 2 . 0 x (No of C o n t a c t s / 2 ) - 2 . 0

0550

Contextual Info: S c h e m a tic : Is o la tio n V o ltag e: 1 5 0 0 V rm s Is o la tio n V o ltag e: 5 0 0 V rm s 6 + 7 + 8 —2 + 3 + 4 TURNS RATIO: TX 1CT: 1 ± 5 % RX 1CT:1CT OCL: 3 5 0 u H In s e rtio n R eturn M in im u m @ 100KHz OUTPUT) ±5% 10 0 m V 8mADC Loss (3 0 0 K H z —1 00M H z): —1.0dB Typical

Contextual Info: Series 1539 Molded Unshielded RF, LCR Coils 1539-00M 1539-02M 1539-04M 1539-06M 1539-07K 1539-08K 1539-1 OK 1539-12K 1539-14K 1539-16K 1539-18K 1539-20K 1539-22K 1539-24K 1539-26K 1539-27K 1539-28K Physical Parameters Inches Length .375 ± .010 Diameter .156 + .010

Contextual Info: S c h e m a tic : r H .j Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P1+2+3 to P4+5+6) Turns Ratio: TX 1CT:1CT ±3 % RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum @100KHz lODmV 8mADC Cw/w: 27pF Typical @100KHz 00mV Insertion Loss (300KHz-1 00MHz): — 1.OdB Max

ztt 8.0 mt

Abstract: 00MHZ ztt Series
Contextual Info: Z T T ä a jrtS '& S ffiS ig lg g g WEJ 1 .8 0 -5 0 .00M Hz Z T T SERIES OF CERAM IC RESONATOR WITH BUILT-IN CAPACITO R • TECHNICAL CHARACTERISTICS mn/Sí^ílEI'íÍ: Part Num ber Stability in Temperature -20~+80°C (%) Frequency A ccu ra cy (25°C) (%)

Contextual Info: BB02- CUSTOMER PROOUCT SPECIFICATION SH EE T BB02-XH 1 . 00MM PI N H E A D E R , O U A L R O W , S T R A I G H T , S M T T Y P E , C RoHS \ 3 I o m p 11a n t 0A T O 80 C O N T A C T S SPECIFIATIONS CURRENT RATING: 1AMR I N S U L A T O R R E S I S T A N C E : 5 0 0 M E G O H M S MI N,

Contextual Info: Transistors SMD Type PNP Transistors 2SA2071 • Features ● High speed switching. Tf : Typ. : 20ns at IC = - 3A ● Low saturation voltage, typically (Typ. : -2 00mV at IC = -2A, IB = -0.2A) ● Strong discharge power for inductive load and capacitance load.

Contextual Info: LedEngin, Inc. High Luminous Efficacy RGBA LED Emitter LZ4-00MA10 Key Features • •             High Luminous Efficacy 10W RGBA LED Individually addressable Red, Green, Blue and Amber die White point tunable to any CCT or hue with enhanced CRI

Contextual Info: LedEngin, Inc. High Luminous Efficacy RGBA LED Emitter LZC-00MA40 Key Features • •            Ultra-bright, Ultra-compact 40W RGBA LED Individually addressable Red, Green, Blue and Amber die Small high density foot print – 9.0mm x 9.0mm x 5.4mm

GR10

Contextual Info: S c h e m a tic : '1 r' .j Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 35DuH Min @100KHz 00mV 8mADC Rise T im e ( 1 0 —9 0% ): In s e rtio n 2 .5 n s Typical Loss (1 DQKHz—10QMHz): —1 .1d B M a x im u m Insertion Loss (1 00MHz—125MHz): —1.5dB Maximum

1S2359

Abstract: VR-60 VR-61 DIODE G06 FOR1A diode sv 03 SV-03 diode
Contextual Info: SILICON RECTIFIER DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) S V-1 Brown 500 C u rre n t fo r 0 .3 V (L e s s than 5 0 / iA ) , 1 00m A (L e s s than 1V) V o lta ge for S V -2 Red 150 C u rre n t fo r 1 .2 V (L e s s than 5 0 j« A ),

diode sv 03

Abstract: SV-03 diode 1S2359 VR-60 VR-61 Diode SV-06
Contextual Info: SILICON RECTIFIER DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) S V-1 Brown 500 C u rre n t fo r 0 .3 V (L e s s than 5 0 / iA ) , 1 00m A (L e s s than 1V) V o lta g e for S V -2 Red 150 C u rre n t fo r 1 .2 V (L e s s than 5 0 j« A ),

754528

Abstract: 75432 SN75432 HD75452
Contextual Info: - 24- Dual Peripheral NAND D river 7 5 4 3 2 /7 5 4 5 2 B ^ tiL 7 5 4 5 2 A /U Io — 00mA 50Q + 15pF Sig V dh tpd Io — 00m A 50Q + 1 5 p F ★ 3 00m A i / > 9 Ic c VlH - * V 1L s£±ii ti A IlH ft M IoH I ol = 00mA VOL Ioi- = 00m A IOL to ta l A B S .

101F2FM

Abstract: 101F12S 100EXD21 100JD12 100JH21 100MAB180 100MAB200 100MAB250 100MLAB160 100MLAB180
Contextual Info: - 44 - Ä m % * 81R3FMA * 1 00EXD21 100JD12 * 100JH21 00MAB18Û 1 0 0MAB200 1 0 0MAB250 1O O M L A B l 60 1O O M L A B l SO 1 00MLA B 2 0 0 1O O M L S 160 1 0 0MLS200 00MLS2 50 100QD21 100QH21 100YD21 ÎOIFIFM ÎOIFIS 101F2FM 101F2S *fc & Vr s m Vr r m IFM

SFR450H

Abstract: NEC car radio 4.5-Mhz Murata sfr450h
Contextual Info: • b427S25 00m 4b5 73b HNECEPRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / P C 2 5 3 3 AM TUNER FOR ELECTRONIC-TUNING CAR RADIO The /xPC2533 is an 1C that has been developed as an AM tuner for car stereo and car radio. It employs double superheterodyne configuration of up conversion type (IF1 « 10.71 MHz, IF2 - 450 kHz .

00A3P

Contextual Info: A2008 S e n e s 2 .00m m p itc h wire to b o a r d c o n n e c t o r ISTMTP A ssem bly L ayout S tr a ig h t Angle V—Type Specifications: P o le s P i t c h b e t w e e n p o le s R a te d V o ltag e R a te d C u r r e n t W ith s ta n d V o ltag e C o n ta c t R e s is ta n c e