00FCJ Search Results

39V18

Abstract: GAL39V18 Signal Path Designer
Contextual Info: NATL SEMICOND MEMORY 31E J> bSOHEb 00fcj4244 k U National Semiconductor GAL39V18 Generic Array Logic General Description Features Using a high performance E2CMOS technology, National Semiconductor has produced a next-generation program­ mable logic device, the GAL 39V18. Having an FPLA archi­

N27C128

Abstract: N27C128-200V05 27C128 INTEL 27c128 290127 27c128a
Contextual Info: INTEL CORP flEMORY/LOGIC SOE ]> • 4ö2bl7b 00fcjfci735 0 intel 27C 128 ~ r~ v z ~ / 3 ~ e s 1 2 8 K ( 1 6 K x 8 ) C H M O S P R O D U C T IO N A N D U V E R A S A B LE P R O M s ■ CHMOS Microcontroller and Microprocessor Compatible ■ High Performance

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

Contextual Info: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers

Contextual Info: HCTS163MS 3 Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP) M IL-STD-1835 CDIP2-T16 TOP VIEW > Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: f f l H A R R HCS20MS I S S E M I C O N D U C T O R Radiation Hardened Dual 4-Input NAND Gate September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-183S CDIP2-T14, LEAD FINISH C

Contextual Info: æ HARRIS S E M I C O N D U C T O R H C S 1 2 5 M S Radiation Hardened Quad Buffer, Three-State September 1995 Features Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS

HD64F3048

Abstract: DDL2473 HD6433044 HD6433045 HD6433047 HD6433048 HD6473048 2117 RAM
Contextual Info: Section 21 Electrical Characteristics —Preliminary— 21.1 Absolute Maximum Ratings Table 21-1 lists the absolute maximum ratings. Table 21-1 Absolute M aximum Ratings —Prelim inary— Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Vpp

B 1449 transistor

Abstract: K 2056 transistor 476 35k 110 TRANSISTOR b 772 p transistor vc 548 BFG55 transistor D 882 p d 772 transistor
Contextual Info: 7110fl5ta DQtififiOE b 7 7 H i P HIN PhHips_Semicont^ Product specification PNP 4 GHz wideband transistor FEATURES • • • • £ BFG55 PINNING High output voltage capability High gain bandwidth product Good thermal stability Gold metallization ensures

0257S2

Contextual Info: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith

Contextual Info: SIEMENS Intelligent 221-Bit EEPROM Counter for > 20000 Units with Security Logic and High Security Authentication SLE 4436 Features • 221 bit EEPROM and 16 bit maskprogrammable ROM 104 bit user memory fully compatible with SLE 4406 - 64 bit Identification Area

Contextual Info: Tem ïc TSC80C31/80C51 S e m i c o n d u c t o r s CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller Description The TSC80C31/80C51 is high performance SCMOS versions of the 8051 NMOS single chip 8 bit |J.C. The fully static design of the TSC80C31/80C51 allows to

Contextual Info: HCTS373MS HARRIS S E M I C O N D U C T O R Radiation Hardened Octal Transparent Latch, Three-State August 1995 Features Pinouts 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20 TOP VIEW

TDA7264

Abstract: THD56 SCHEMATIC SOUND BOARD FZJ 145
Contextual Info: r Z J S G S -TH O M SO N ^ 7 # 0 ^ D g ^ @ i[L [l(g ï^ M 0 i TDA7264 25 + 25W STEREO AMPLIFIER WITH MUTE/ST-BY • WIDE SUPPLY VOLTAGE RANGE (UP TO 50V ABS MAX. ■ SPLIT SUPPLY . HIGH OUTPUT POWER: 25 + 25W @ THD =10%, Rl = 80, Vs = ±20V . NO POP AT TURN-ON/OFF

hcf4001b

Contextual Info: HCC/HCF4000B-4001B HCC/HCF4002B-4025B S G S -T H O M S O N \u NOR GATE 4000B-DUAL 3 INPUT PLUS INVERTER 4001B-QUAD 2 INPUT 4002B-DUAL 4 INPUT 4025B TRIPLE 3 INPUT micropackage. The HCC/HCF4000B, HCC/HCF4001B, HCC/HCF 4002B and HCC/HCF4025B nor gate provide the

Contextual Info: S H IP 4 0 8 1 M A S S 'S 80V/2.5A Peak, High Frequency Full Bridge FET Driver January 1995 Description Features Independently Drives 4 N-Channel FET In Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP

AMD K6

Contextual Info: Preliminary Information Mobile AMD-K6 -III-P Processor Data Sheet 22655A/0-May 1999 1 AMDË1 M o b ile A M D -K 6 ® -III-P Processor • Advanced 6-Issue RISC86® Superscalar Microarchitecture ♦ Ten parallel specialized execution units ♦ Multiple sophisticated x86-to-RISC86 instruction decoders

hs138

Contextual Info: L j A Q E HS-302RH/883S, HS-303RH/883S, HS-306RH/883S, HS-307RH/883S, HS-384RH/883S, HS-390RH/883S p i e Radiation Hardened CMOS Analog Switches September 1995 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of

temic 8051

Abstract: DIL-4 temic 80c51 marking 09x 80C31 TEMIC
Contextual Info: Tem ïc TSC80C31/80C51 S e m i c o n d u c t o r s CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller Description The TSC80C31/80C51 is high performance SCMOS versions of the 8051 NMOS single chip 8 bit |J.C. The fully static design of the TSC80C31/80C51 allows to

ZO 607 MA 7A 523

Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Contextual Info: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 82C284/883 HARRIS S E M I C O N D U C T O R Clock Generator and Ready Interface for 80C286 Processors August 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.

28F010-150P1C4

Abstract: LQXO N28F010-200P1C4 402b eeprom 28f010-200 26f010 29020 intel 3003 3003 intel
Contextual Info: INTEL CÖRP MEMORY/LOGIC 20E D • MflSblTb 00fc,730S 2 T-¥6~/3-Z7 28F010 1024K (128K X 8) CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 ¡i b Typical Byte-Program — 2 Second Chip-Program

Contextual Info: CSI H A R R HCTS139MS I S S E M I C O N D U C T O R Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16

AKJ1384C

Abstract: M48Z59 M48Z59Y M4Z28-BR00SH1 SOH28
Contextual Info: 5 7 . SGS-THOMSON M48Z59 CMOS 8K X 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY MICROPROCESSOR POWER-ON RESET Valid all the way to Vcc = Vss AUTOMATIC POWER-FAL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT