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    26F010 Search Results

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    26F010 Price and Stock

    Eaton Cutler-Hammer

    Eaton Cutler-Hammer PDG26F0100TFFL

    PDG2,4P(60%N),100A,25KA/480V, FXFXTMTU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PDG26F0100TFFL Bulk 2 Weeks 1
    • 1 $1142.49
    • 10 $1142.49
    • 100 $1142.49
    • 1000 $1142.49
    • 10000 $1142.49
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    Eaton Cutler-Hammer PDG26F0100TFFJ

    PDG2,4P(60%N),100A,25KA/480V, FXFXTMTU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PDG26F0100TFFJ Bulk 2 Weeks 1
    • 1 $1231.25
    • 10 $1231.25
    • 100 $1231.25
    • 1000 $1231.25
    • 10000 $1231.25
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    Eaton Cutler-Hammer PDG26F0100TFFK

    PDG2,4P(60%N),100A,25KA/480V, FXFXTMTU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PDG26F0100TFFK Bulk 2 Weeks 1
    • 1 $1142.49
    • 10 $1142.49
    • 100 $1142.49
    • 1000 $1142.49
    • 10000 $1142.49
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    Eaton Cutler-Hammer PDG26F0100VFFN

    PDG2,4P60%N,100A,25KA/480V,50C FXFXTMTU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PDG26F0100VFFN Bulk 2 Weeks 1
    • 1 $1053.71
    • 10 $1053.71
    • 100 $1053.71
    • 1000 $1053.71
    • 10000 $1053.71
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    Eaton Cutler-Hammer PDG26F0100TFFN

    PDG2,4P(60%N),100A,25KA/480V, FXFXTMTU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PDG26F0100TFFN Bulk 2 Weeks 1
    • 1 $1053.71
    • 10 $1053.71
    • 100 $1053.71
    • 1000 $1053.71
    • 10000 $1053.71
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    26F010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for


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    a28f0101024k32-leap28f010-150+6an28f010-150er-20er-2428f010rr-60ap-316 PDF

    8155 intel microcontroller architecture

    Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Automotive Temperature Range: —40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Chip-Program


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    a28f0101024k120nsap28f010-120+7an28f010-120ap28f010-150an28f010-150er-20er-24rr-608155 intel microcontroller architecture PDF

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


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    q07bbbl28f0101024knonvolaf010-120+12tn28f010-120p28f010-150n28f010-150n28f010-90v05e28f010-120e28f010-150pld intelintel 28f01007b27interfacing eprom and eeprom28f010-150intel pld PDF

    TN28F010

    Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


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    28f0101024k32-pin32-lead+328f010-6528f010-90tn28f010 PDF

    28F010-120

    Abstract: 28f010
    Contextual Info: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program


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    28f0101024kn28f010-120tn28f010-120+7n28f010-150f28f010-120f28f010-150te28f010-120tf28f010-120er-2028f010-120 PDF

    Contextual Info: in tj, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V ±10% Vcc


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    28f001bx-t/28f001bx-b32-lead28f001bx PDF

    28f010-200

    Abstract: P28F010-200 28f010 26F010 290207
    Contextual Info: in t e i 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming?* Algorithm — 10 /us Typical Byte-Program — 2 Second Chip-Program ■ 10,000 Erase/Program Cycles Minimum ■


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    28f0101024k32-pin32-lead+732-p1np28f010-120p28f010-150p28f010-20028f010-20026f010290207 PDF