290207 Search Results

Contextual Info: Extract from the online catalog EEM-MKT-DRA Order No.: 2902078 DIN rail adapter for EEM-MA600 and EEM-MA400 energy meters Product notes WEEE/RoHS-compliant since: 2011-01-20 Commercial data

TN28F010

Abstract: 29020
Contextual Info: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

D28F010-120P1C4

Abstract: D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010 28F010
Contextual Info: INTEL CORP M EM OR Y / L O G I C 15E D I MflSbl7b QObllOl 0 I ir'iraSMUWULfM^lrtU 28F010 T'H6-I5'Z7 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Program m ing Algorithm — 10 jus Typical Byte-Program

SM28F001AX

Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm
Contextual Info: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write

28F010

Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP

diode in58

Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Contextual Info: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors

Contextual Info: Extract from the online catalog EEM-MA400 Order No.: 2901364 Energy measurement device to measure electrical parameters in low voltage installations up to 500 V, acquisition of total harmonic

29020

Contextual Info: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

Contextual Info: in te l 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 |as Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical

PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

29020

Contextual Info: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity

transistor t 2190

Abstract: intel 2114 SmartDie 28F010
Contextual Info: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical

8 PIN IC l2722

Abstract: L165 equivalent L2722 equivalent schematic diagram converter input 12v to 24v 4a L272M equivalent SGS L272M L272 Circuit L272M amplifier l165 L165 op amp
Contextual Info: L165 3A POWER OPERATIONAL AMPLIFIER OUTPUT CURRENT UP TO 3A LARGE COMMON-MODE AND DIFFERENTIAL MODE RANGES SOA PROTECTION THERMAL PROTECTION Pentawatt ± 18V SUPPLY DESCRIPTION The L165 is a monolithic integrated circuit in Pentawatt package, intended for use as power

29F020

Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program

PLD intel

Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program

intel 28F010

Abstract: N28F010-120 28F010 80C186 E28F010
Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for

Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program

Contextual Info: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

25t65

Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
Contextual Info: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221

29F020

Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface

intel 28F010

Abstract: 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020
Contextual Info: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

TN28F010

Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

AP-606

Abstract: PCMCIA 1.0 28F0016SA MC020FLSP 292096
Contextual Info: intei AP-606 APPLICATION NOTE Interchangeability of Series 1, Series 2, and Series 2 + Flash Memory Cards SEAN CASEY TECHNICAL MARKETING ENGINEER November 1994 _ IF ^ iL D IM lO K lÄ l^ ir 6-170 I Order Number: 292158-001 INTERCHANGEABILITY OF SERIES 1, SERIES 2, AND

Contextual Info: Extract from the online catalog EEM-MA600 Order No.: 2901366 Energy measurement device to measure electrical parameters in low voltage installations up to 700 V, acquisition of individual harmonic