00B72 Search Results

28F256A

Abstract: 29024
Contextual Info: INTEL CORP inter • MEMORY/LOGIC 20E D ■ 4a2bl7b 00b72fll 3 ■ MSWMKSIS 0MF ^!M/?\?D©M 28F256A 256K (32K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte-Program

Transistor BFR 97

Abstract: bfr 49 transistor BFR34A
Contextual Info: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1

Contextual Info: Æ T SGS-THOMSON * •7 # « R ü lO » I[L ilg M llD g i G S 2 T 1 2 -9 S 2 W LAN DC-DC CONVERTER Type GS2T12-9S Vin Vout •out 9,5 to 15,75 V 9V 250 mA DESCRIPTION The GS2T12-9S is a 2.25W unregulated DC-DC converter designed to provide power, voltage regu­

sgs Thomson Thyristor

Abstract: ICC3-400 thyristor capacitive discharge ignition use ic in capacitor discharge ignition IGNITION THOMSON ICC03-400B2 antiparallel scr 7270 ic capacitive discharge ignition capacitor discharge ignition
Contextual Info: £ = T S G S -T H O M S O N ^ 7 # RfflDOMmLKgTTliOlD ! Application Specific Discretes A.S.D. ICC03-400B2 IGNITION CO NTRO L C IR C U IT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL ■ DEDICATED THYRISTOR STRUCTURE FOR

Contextual Info: Pr e l im in a r y P r o d u c t S p e c if ic a tio n <S>2 iL 0 E 8 9 1 6 7 /1 6 9 Z 8 9 1 6 8 R O M Z LE SS En h a n c e d D u a l P r o c e s s o r T a p e l e s s T. A. m . C o n t r o l l e r FEATURES • 16-Bit Digital Signal Processor (DSP) ■ 8K Words of DSP Program ROM

Contextual Info: SGS-THOMSON IHICTMDÊi HCC4504B HCF4504B HEX TTL OR CMOS TO CMOS LEVEL SHIFTER PRODUCT PREVIEW . VERY LOW QUIESCENT CURRENT . HIGH NOISE IMMUNITY • SUPPLY VOLTAGE RANGE 3V TO 18V FOR V d d ANDV cc . UP TRANSLATES FROM A LOW TO A HIGH VOLTAGE OR DOWN TRANSLATES FROM A

Contextual Info: Section 1 Overview 1.1 Overview The H8/300L Series is a series of single-chip microcontrollers MCU: microcomputer unit built around the high-speed H8/300L CPU and equipped with peripheral system functions on-chip. Within the H8/300L Series, the H8/3714 Series microcontrollers are equipped with high-voltage

Contextual Info: a RHRP6120CC HARRIS S E M I C O N D U C T O R juiy 1996 6A, 1200V Hyperfast Dual Diode Features Description • Hyperfast with Soft R ecovery. <55ns • Operating T em p eratu

Contextual Info: æ HSP3824 HARRIS S E M I C O N D U C T O R Direct Sequence Spread Spectrum Baseband Processor July 1996 Features Description Complete DSSS Baseband Processor High Data Rate. up to 4 MBPS Processing G a in .up to 12dB

5521 philips

Abstract: TRANSISTOR c 5521 SSOP16 TSA5520 TSA5520M TSA5520T TSA5521 Philips TV front end module
Contextual Info: INTEGRATED CIRCUITS TSA5520; TSA5521 1.3 GHz universal bus-controlled TV synthesizer Product specification File under Integrated Circuits, IC02 1995 Mar 16 Philips Semiconductors PHILIPS P H IL IP S 711002b 0 0 0 7 m 77b This Material Copyrighted By Its Respective Manufacturer

Contextual Info: S G S -T H O M S O N S IMS T225E s L lP T M lM i 16-bit transputer - Extended temperature FEATURES H 16 bit architecture H 50 ns internal cycle time H 20 MIPS peak instruction rate H Debugging support H 4 Kbytes on-chip static RAM H 40 Mbytes/sec sustained data rate to internal

ZO 607 MA 7A 523

Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Contextual Info: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!

SS35L

Abstract: smd marking YB Q67100-Q1244 AAFL1
Contextual Info: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8

Contextual Info: SG S -TH O M S O N HCC4529B M Gfô llLI@ra@m(5S_ HCF4529B DUAL 4-CHANNEL OR SINGLE 8-CHANNEL ANALOG DATA SELECTOR • . . . . DATA PATHS ARE BIDIRECTIONAL 10 MHz OPERATION (typical 3-STATE OUTPUTS ”ON” RESISTANCE 125 W TYPICAL @ 15V SUPPLY VOLTAGE RANGE = 3Vdc T 0 18Vdc

ZS 633

Abstract: ZS 1052 AC cerec BFQ645 617 300 MARKING 7C
Contextual Info: SIEM EN S NPN Silicon RF Transistor BFQ 645 Preliminary Data • For low-noise, high-gain amplifiers and medium power oscillators at collector currents up to 20 mA. • fr = 9 GHz F = 1 .9 d B a t2 G H z ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC M O S Integrated Circuit V851 32-/16-BIT SINGLE-CHIP MICROCONTROLLER The V851 is a single-chip microcontroller that integrates a 32-bit CPU of RISC architecture with ROM, RAM, interrupt controller, real-time pulse unit, and serial interface.

SC11372

Abstract: B5G1 ffsk PGA3906 SC11372CQ selcall 10A Switching convertor kit REG03 bd398
Contextual Info: SC11372 National Semiconductor SC11372 Mobile Radio Analog Processor General Description Features The SC11372 is a CMOS integrated circuit designed to per­ form the baseband signal processing for multi-standard mo­ bile radio applications. Application of the IC will allow equip­

sonar beamforming

Abstract: IMSA113 IMS A121
Contextual Info: SCS-1ItLIOT * H0MS0N IMSA113 PROGRAMMABLE LENGTH DIGITAL DELAY LINE PRELIMINARY DATA • VARIABLE LENGTH 5-1317 CYCLES LATENCIES OF 6-1318 ■ FULLY CASCADABLE IN WIDTH AND LENGTH ■ AUTO-ZEROING OF DATA ON LENGTH CHANGE ■ UP TO 20MHz DATA RATE ■ FULLY STATIC HIGH SPEED CMOS IMPLE­

Contextual Info: HCC/HCF4543B /Z T “ 7# HCC4543B HCF4543B S C S -TH O M S O N [j^D [H] [l[LiCTi©iD©i BCD-TO-7 SEGMENT LATCH/DECODER/LCD DRIVER . DISPLAY BLANKING OF ALL ILLEGAL INPUT COMBINATIONS . LATCH STORAGE OF CODE . CAPABILITY OF DRIVING TWO LOW POWER TTL LOADS, TWO HTL LOADS, OR ONE LOW

Contextual Info: - TC74VHC02F/FN/FS QUAD 2 -INPUT NOR GATE The TC74VHC02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low

Contextual Info: m m a r r i u f /\1 2 1 2 s È S E M I C O N D U C T O R Ê Ê # I f M ^ i b Dual 350MHz, Low Power Closed Loop Buffer Amplifier August 1996 Features Description • Differential G ain . 0.025% The HFA1212 is a dual closed loop Buffer featuring user pro­

intel 28F256

Abstract: 28F256 CMOS FLASH 28F256 intel 28F256 plcc 1H90 N28F256-170P1C2 capacitor ja8 intel power supply 450 watt circuit diagram 27F256 D28F256
Contextual Info: INTEL CORP MEMORY/LOGIC 5QE D • 4flShl7b GQh72fciO t. ■ lÄ iL ß G ü f lO IiM V T -U -1 3 -2 1 28F256 256K (32K x 8) CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 100 ¿is Typical Byte-Program