00B55 Search Results

Contextual Info: H A R R HI3026, CXA3026 IS SEMICONDUCTOR PRELIMINARY 8-Bit 120 MSPS Flash A/D Converter February 1996 Features Description Differential Linearity E rro r. ±0.5 LS8 The HI3026, CXA3026 is an 8-bit ultra high-speed flash A/D converter capable of digitizing analog signals at the maxi­

Contextual Info: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET O UTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ P id B for NEZ5964-15D /15D D 9W (39.5 dBm) Typ P id B for NEZ5964-8D/8D D 4.5W (36.5 dbm) Typ P id B for NEZ5964-4D/4DD

S16R6

Abstract: TDA 2088 GAL16V8Q GAL16V80
Contextual Info: 4 TE National Semiconductor D NSC 3 b S D l i a t i DDbSEl fl T li NATL SEMICOND MEMORY) February1992 T -V * -/? -0 7 GAL16V8QS 20-Pin Generic Array Logic Family General Description Features The EECMOS GAL QS devices combine a high per­ formance CMOS process with electrically erasable floating

113F

Abstract: QQH553H 12 vdc to 5 v dc-dc converter 113-F
Contextual Info: A T & T HE LE C CMPNT/PWR 25E D Data Sheet ^ = AT&T t -5 7 -// 113F Power Module: DC-DC Converter; +5 Vdc Input, - 5 Vdc Output, 1.5 W Features • High reliability: MTBF > 4,500,000 hours at 40 °C ■ Low profile ■ Small size: 0.96" x 0.70" x 0.47" (24.4 mm x 17.8 mm x 11.9 mm)

Burr Brown part marking

Abstract: low noise 650nm laser diode ld 650NM photodiode photodiode amplifier 25CC OPT201 OPT201KP QPT201 REGULATOR IC 377 PLASTIC PACKAGE Burr-Brown IC appendix c
Contextual Info: Or, Call Customer S e m e al 1-8O0-548-S132 {USA Only INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 Inch 2.29 x 2.29mm) • 1M£i FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W ($50nm) The OPT201 is an opto-electronic integrated circuit

Contextual Info: /S T SGS-THOMSON *7 # . M48T59 HO E©ilLI gra©R! D(@i CMOS 8K X 8 TIMEKEEPER SRAM PRELIMINARY DATA PCDIP28 (PC) Battery CAPHAT SOH28 (MH) Battery SNAPHAT Figure 1. Logic Diagram < — o o INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK and POWER-FAIL CONTROL CIRCUIT

RWF 55.5 TEMPERATURE CONTROLLER

Abstract: TC8833F-1
Contextual Info: TC8833F-1 • DD2SS13 53b ■ T0S3 TOSHIBA UC/UP 1. b4E D GENERAL The Toshiba TC8833F is a singlechip CMOS voice recording / playback LSI based on ADM (Adaptive D elta M odulation). I t can m ake use of ordinary or pseudo S - RAM to record voice d a ta as well as

Contextual Info: HARRIS SEMI CONDUCTOR HI2559, CXD2559 1-Bit D/A Converter For Audio Application February 1996 Features Pinout • Two-Channel D/A Converter and Oversampling Digital Filter Into a Single Chip HI2559, CXD2559 32 LEAD MQFP TOP VIEW • Distortion. 0.012% or Less

TA164

Contextual Info: Product specification Philips Semiconductors Military FAST Products 8-Bit serial-in parallel-out shift register 54F164 Data shifts one place to the right on each Low-to-High transition of the Clock CP input, and enters into Q0 the logical FEATURES • Gated serial data inputs

PD488170L

Abstract: NEC Rambus RDRAM cross reference NSN LTE NEC RDRAM 36
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD488170L 18M-BIT Rambus D RA M 1 M - W O R D X 9- BI T X 2 - B A N K Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable o f bursting up to 256 bytes o f data at 2 ns per byte. The use of Rambus S ignaling

NE76084

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE

Contextual Info: Preliminary Information 21896A/0—January 1999 1 AMDËI Mobile AMD-K6 -2 Processor Data Sheet Mobile AMD-K6®-2 Processor • Advanced 6-Issue RISC86® Superscalar Microarchitecture ♦ Seven parallel specialized execution units ♦ M ultiple sophisticated x86-to-RISC86 instruction decoders

Contextual Info: SIEMENS 16M x 72-Bit Dynamic RAM EDO- Module ECC - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation

gal programming algorithm

Abstract: XOR en TTL gal9 opal GAL20V8Q
Contextual Info: ^ National ÉM Semiconductor NATL SEMICOND M EM ORY NSC3 February 1992 r -v < -/? -0 7 GAL20V8QS 24-Pin Generic Array Logic Family General Description Features The EECMOS GAL QS devices combine a high per­ formance CMOS process with electrically erasable floating

Contextual Info: HI20206, CX20206 33 8-Bit 35 MSPS RGB 3-Channel D/A Converter TTL Input February1996 Features • Description • Maximum Conversion Speed.35 MSPS • RGB 3-Channel Input/Output

NE8004

Abstract: NE800495-4
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •

NE900275

Abstract: NE9002
Contextual Info: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES . CLASS A OPERATION . HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7 d B • HIGH POWER ADDED EFFICIENCY CÛ *o DESCRIPTION 3 The NE9000, NE9001, and NE9002 are 0.5 micron recessed

3793-n

Abstract: 3793-A 3793A MB3793 2ssm
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET POWER-VOLTAGE MONITORING 1C WITH WATCHDOG TIMER MB3793-42/30 • DESCRIPTION The MB3793 is an integrated circuit to monitor power voltage; it incorporates a watchdog timer. A reset signal is output when the power is cut or falls abruptly. When the power recovers