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Abracon Corporation ABM8-12.000MHZ-R100-B3-T - Tape and Reel (Alt: ABM8-12.000MHZ-R100-B3-T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	ABM8-12.000MHZ-R100-B3-T	Tape & Reel		14 Weeks	1,000	1 - 10 - 100 - 1000 $0.26 10000 $0.23	Buy Now
Intel Corporation GE28F800B3TA90 NOR Flash Parallel 3V/3.3V 8M-bit 512K x 16 90ns 48-Pin VFBGA Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	GE28F800B3TA90		1,974			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	GE28F800B3TA90		2			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Intel Corporation TE28F800B3TA90 NOR Flash Parallel 3V/3.3V 8M-bit 512K x 16 90ns 48-Pin TSOP Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TE28F800B3TA90		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Intel Corporation GT28F800B3T110 Flash, 512KX16, 110ns, PBGA48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	GT28F800B3T110		12,000		1	1 - 10 - 100 $5.70 1000 $5.10 10000 $4.80	Buy Now
Intel Corporation GT28F800B3T120 Flash, 512KX16, 120ns, PBGA48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	GT28F800B3T120		4,680		1	1 - 10 - 100 $5.70 1000 $5.10 10000 $4.80	Buy Now

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00B3T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
7406PC Abstract: 7406 ic pin diagram Contextual Info: { NATIONAL SEflICOND -CLOGIO 02E D I ^501122 00b3t,M3 3 I _T* YJ-/S' - 06 CO NNECTIO N DIAGRAM PINOUT A 54/7406 HEX INVERTER BUFFER/DRIVER With O pen-Collector High-Voltage Output E E E E E E >E ORDERING CODE: See Section 9 PIN PKGS	OCR Scan	00b3t 7406pc 7406dc 7406fc +35406dm -l-l-jl11-7406 ic pin diagram	PDF
TSH321 Contextual Info: SGS-THOMSON TSH321 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/\|as VERY FAST SETTLING TIME : 60ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION: The TSH321 is a wideband monolithic operational	OCR Scan	tsh321 300mhz	PDF
c17f Abstract: IE-02 BUK436-100A BUK436-100B Contextual Info: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in	OCR Scan	7110fl2b c17fl buk436-100a/b buk436 +7-100a -100b /c-\15 c17f ie-02 buk436-100a buk436-100b	PDF
27CP128 Abstract: 27CP128Q250 27C256 General Semiconductor 27cp128q 27CP128Q250/883 Contextual Info: NATL S E M I C O N D 31E D MEMORY March 1989 "7= Ì & - / Ì - 2 9 27CP128 131,072-Bit (16,384 x 8) UV Erasable CMOS PROM Military Qualified General Description Features The 27CP128 is a high-speed 128K UV erasable and electri cally reprogrammable CMOS EPROM, ideally suited for ap	OCR Scan	bsg112b 27cp128 072-bit 28-pin +532-pin 27cp128q250 27c256 general semiconductor 27cp128q 27cp128q250/883	PDF
27S12 Abstract: 27128 memory nsc600 Contextual Info: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica tions where fast turnaround, pattern experimentation and	OCR Scan	0112b 27c64 536-bit 28-pin +632-pin 2-26a 39m131931 27s12 27128 memory nsc600	PDF
LSD112E Contextual Info: "NATIONAL SEfllCOND {L OG IC} D5E D \| b S D l l E S □□bBc142 2 \| 199 'F H L -o f-òS ' CO NNECTIO N DIAGRAM PINO UT A 54/74199 8-B IT PARALLEL I/O SH IFT REGISTER D E S C R IP T IO N — The ’199 is a parallel in, parallel out register featuring synchronous parallel load, shift right and hold modes. State changes are	OCR Scan	lsd112e	PDF
0112E Abstract: 3055 data de Contextual Info: 221A S e m i c o.n d u c t o r National 74VHC221A Dual Non-Retriggerable Monostable Multivibrator General Description The ’VHC221A is an advanced high speed CMOS Monosta ble Multivibrator fabricated with silicon gate CMOS technol ogy. It achieves the high speed operation similar to equiva	OCR Scan	74vhc221a vhc221a 74vhc bsg1122 +3d003bfis 0112e 3055 data de	PDF
BUK444-400B Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sti D0fci3^bti Dll M P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	711d6sti buk444-400b -sot186	PDF
PHILIPS MOSFET MARKING Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351 Contextual Info: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio \|YfS I/C* • Low noise gain controlled amplifier to 1 GHz.	OCR Scan	bf998 ot143 philips mosfet marking transistor mosfet bf998 +3dual gate mosfet n-channel dual gate mcb351	PDF
philips lps 100 Abstract: BUK441 BUK441-100A BUK441-100B P101 Contextual Info: PHILIPS INTERN ATI ONAL fc.SE D H 7110fl5t> 0Qfa3*m 741 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In	OCR Scan	711002b buk441-100a/b -sot186 buk441 +7-100a -100b 711dasfc philips lps 100 buk441-100a buk441-100b p101	PDF
BUK436-1000B Abstract: buk436-1000 Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711002b buk436-1000b 7110fl2fci buk436-1000	PDF
BUK444 Abstract: BUK444-800A BUK444-800B YA11 Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	7110fl2b buk444-800a/b ot186 buk444 +5-800a -800b buk444-800a buk444-800b ya11	PDF
BUK436-1000B Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711062b buk436-1000b	PDF
SVR 681 Abstract: LM393 TS3V3702 TS3V393 TS3V393I Contextual Info: / = 7 SG S-TH O M SO N TS3V393 3V MICROPOWER DUAL VOLTAGE COMPARATORS • DEDICATED TO 3.3V OR BATTERY SUPPLY specified at 3V and 5V ■ EXTREMELY LOW SUPPLY CURRENT : 9\|xA typ/comparator ■ WIDE SINGLE SUPPLY RANGE 2.7V to 16V ■ EXTREMELY LOW INPUT CURRENTS :	OCR Scan	ts3v393 lm393 ts3v3702 10khz +37ci2c1237 svr 681 ts3v393i	PDF

transistor BC 568 Abstract: dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209 Contextual Info: PHILIPS INTERNATIONAL b5E D • 711DflEb a D b 3 T 4 b Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	buk442-100a/b pinning-sot186 -id/100 transistor bc 568 +7dgb3t 100-p buk442 buk442-100a buk442-100b smps tig welding transistor bc 209	PDF