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    00B3T Search Results

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    Rochester Electronics LLC GT28F800B3T90

    IC FLASH 8MBIT CUI 48UBGA
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    DigiKey GT28F800B3T90 Bulk 178,740 284
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    Rochester Electronics LLC TE28F800B3TA120

    ADVANCED BOOT BLOCK FLASH MEMORY
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    DigiKey TE28F800B3TA120 Bulk 31,102 59
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    Rochester Electronics LLC GT28F800B3T110

    IC FLASH 8MBIT CUI 48UBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT28F800B3T110 Bulk 12,000 284
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    Rochester Electronics LLC GT28F800B3T120

    IC FLASH 8MBIT CUI 48UBGA
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    DigiKey GT28F800B3T120 Bulk 4,680 284
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    Allegro MicroSystems LLC CT456-H00B3-TS08

    CURRENT SENSOR MR 8-TSSOP
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    DigiKey () CT456-H00B3-TS08 Digi-Reel 2,710 1
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    CT456-H00B3-TS08 Cut Tape 2,710 1
    • 1 $3.49
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    Mouser Electronics () CT456-H00B3-TS08
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    CT456-H00B3-TS08
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    00B3T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7406PC

    Abstract: 7406 ic pin diagram
    Contextual Info: { NATIONAL SEflICOND -CLOGIO 02E D I ^501122 00b3t,M3 3 I _T* YJ-/S' - 06 CO NNECTIO N DIAGRAM PINOUT A 54/7406 HEX INVERTER BUFFER/DRIVER With O pen-Collector High-Voltage Output E E E E E E >E ORDERING CODE: See Section 9 PIN PKGS


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    00b3t 7406PC 7406DC 7406FC 5406DM -l-L-Jl11- 7406 ic pin diagram PDF

    TSH321

    Contextual Info: SGS-THOMSON TSH321 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/|as VERY FAST SETTLING TIME : 60ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION: The TSH321 is a wideband monolithic operational


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    TSH321 300MHz TSH321 PDF

    c17f

    Abstract: IE-02 BUK436-100A BUK436-100B
    Contextual Info: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in


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    7110fl2b c17fl BUK436-100A/B BUK436 -100A -100B /C-\15 c17f IE-02 BUK436-100A BUK436-100B PDF

    27CP128

    Abstract: 27CP128Q250 27C256 General Semiconductor 27cp128q 27CP128Q250/883
    Contextual Info: NATL S E M I C O N D 31E D MEMORY March 1989 "7= Ì & - / Ì - 2 9 27CP128 131,072-Bit (16,384 x 8) UV Erasable CMOS PROM Military Qualified General Description Features The 27CP128 is a high-speed 128K UV erasable and electri­ cally reprogrammable CMOS EPROM, ideally suited for ap­


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    bSG112b 27CP128 072-Bit 28-pin 32-pin 27CP128Q250 27C256 General Semiconductor 27cp128q 27CP128Q250/883 PDF

    27S12

    Abstract: 27128 memory nsc600
    Contextual Info: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica­ tions where fast turnaround, pattern experimentation and


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    0112b 27C64 536-Bit 28-pin 32-pin 2-26A 39M131931 27S12 27128 memory nsc600 PDF

    LSD112E

    Contextual Info: "NATIONAL SEfllCOND {L OG IC} D5E D | b S D l l E S □□bBc142 2 | 199 'F H L -o f-òS ' CO NNECTIO N DIAGRAM PINO UT A 54/74199 8-B IT PARALLEL I/O SH IFT REGISTER D E S C R IP T IO N — The ’199 is a parallel in, parallel out register featuring synchronous parallel load, shift right and hold modes. State changes are


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    PDF

    0112E

    Abstract: 3055 data de
    Contextual Info: 221A S e m i c o.n d u c t o r National 74VHC221A Dual Non-Retriggerable Monostable Multivibrator General Description The ’VHC221A is an advanced high speed CMOS Monosta­ ble Multivibrator fabricated with silicon gate CMOS technol­ ogy. It achieves the high speed operation similar to equiva­


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    74VHC221A VHC221A 74VHC bSG1122 D003bfiS 0112E 3055 data de PDF

    BUK444-400B

    Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sti D0fci3^bti Dll M P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    711D6Sti BUK444-400B -SOT186 BUK444-400B PDF

    PHILIPS MOSFET MARKING

    Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
    Contextual Info: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.


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    BF998 OT143 PHILIPS MOSFET MARKING BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351 PDF

    philips lps 100

    Abstract: BUK441 BUK441-100A BUK441-100B P101
    Contextual Info: PHILIPS INTERN ATI ONAL fc.SE D H 7110fl5t> 0Qfa3*m 741 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In


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    711002b BUK441-100A/B -SOT186 BUK441 -100A -100B 711DASfc. philips lps 100 BUK441-100A BUK441-100B P101 PDF

    BUK436-1000B

    Abstract: buk436-1000
    Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    711002b BUK436-1000B 7110fl2fci buk436-1000 PDF

    BUK444

    Abstract: BUK444-800A BUK444-800B YA11
    Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    7110fl2b BUK444-800A/B OT186 BUK444 -800A -800B BUK444-800A BUK444-800B YA11 PDF

    BUK436-1000B

    Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    711062b BUK436-1000B BUK436-1000B PDF

    SVR 681

    Abstract: LM393 TS3V3702 TS3V393 TS3V393I
    Contextual Info: / = 7 SG S-TH O M SO N TS3V393 3V MICROPOWER DUAL VOLTAGE COMPARATORS • DEDICATED TO 3.3V OR BATTERY SUPPLY specified at 3V and 5V ■ EXTREMELY LOW SUPPLY CURRENT : 9|xA typ/comparator ■ WIDE SINGLE SUPPLY RANGE 2.7V to 16V ■ EXTREMELY LOW INPUT CURRENTS :


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    TS3V393 LM393 TS3V393 LM393) TS3V3702 10kHz, 7CI2C1237 SVR 681 LM393 TS3V393I PDF

    transistor BC 568

    Abstract: dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209
    Contextual Info: PHILIPS INTERNATIONAL b5E D • 711DflEb a D b 3 T 4 b Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    BUK442-100A/B PINNING-SOT186 -ID/100 transistor BC 568 dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209 PDF