00D031 Search Results

TCN-1000-12

Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Contextual Info: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range

LA 7804 ON

Abstract: ic 7804 RBS 6000 SERIAL CONNECTION pin diagram of 7804 basic ic 7804 LA 7804a 7804a LA 7804 i
Contextual Info: THOMSON MIL ET SPATIAUX • ^¿bôTÈ 00D0313 7 ■ O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH 7804A LINEAR CCD* IMAGE SENSOR 1024 PIXELS V|<i V « / Guelfi NC Vos *t*i *1'p NO Vs$ ■ Pixel size : 13 ¡im x 13 /im 13 /tm pitch ■ H igh d a ta o utp ut r a t e : 20 M H z typ.

Contextual Info: AM P INFORMATION STORAGE DEVICES ' fliip M e f' TECHNOIOGYBYISD ISD1200 Series Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations PRELIMINARY _ FEATURES • Easy-to-use single-chip voice record/ playback solution Fully addressable to handle multiple

40N25

Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Contextual Info: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300

EA-D20025AR

Abstract: EPSON ea-d16015ar EPSON EA-D16025AR ea-D16025AR ea-d16015ar EA-D20025 EA-D20025AR-S EA-D20025AR epson EA-D16025AR-S LCD display module 20x2 characters
Contextual Info: EPSON Alphanumeric Dot Matrix LCD Module I Features Built in a display data x 8 bits : for 80 characters CGROM 192 characters , built in CGRAM (8 characters) (it can be extended to CGROM 256 characters)

Contextual Info: Surface Mount LED, 0190 bulk & 0198 (tape & reel) Series The 0190 series lamps are miniature chip type designed for surface mounting. These lamps measure approximately 0.8 x l. 6 mm. These lamps are available in EIA481 tape and reel packaging with approximately 2000 pcs per reel. For tape and reel packaging the

4116 DRAM 16Kx1

Abstract: 82C206 82C558
Contextual Info: 82C556/82C557/82C558 Figure 2-3 82C557 SYSC Block Diagram I R ES ET PW RG D CLK ECLK LCLK HA[31:3] BE[7:0]# M /IO # D/C# W /R # /IN V /D IR TYO AD S # BRDY# NA# KEN #/LM EM # EADS#/(W B/W T#) HITM # CACHE# SM IACT# EC D OE# O C D O E# ECAWE#/CACSOO# OCAW E#/CACS1 O#

75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Contextual Info: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)

IXTH26N50

Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Contextual Info: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450

Contextual Info: AVG Semiconductors DDiT Technical Data Hex Buffer/Converter DV4049B DV4050B 4049B,4050B The D V4049B Hex Inverter/Buffer and DV4050B Noniverting Hex Buffer are constructed with M O S P-Channel and N-Channel enhancement mode devices in a single monolithic struc­

M/MIL-C-39006

Contextual Info: m MATSUO TYPE SOLID-ELECTROLYTE TANTALUM CAPACITORS A O 5 - 2 /-0 s A CAUTIONS 111 •This capacitor is polarized, do not apply reverse voltage. >The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please

42N15

Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

PS8613

Abstract: MAX293 equivalent NT46 M4125 M41256PP
Contextual Info: ^ m irliO — A T & T MELEC I H C 4 1 2 5 6 x x fi)jO B , FEATURES • 262,144 words x 1-bit organization • Read-Modify-Write capabilities • 100/120/150 ns access tim e from RE • RE Only R efresh/H idden Refresh • 50/60/75 ns access time from CE

26655B

Contextual Info: m * SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO TYPE 122 Non polar type A CAUTIONS • The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please inquire of our Sales Department to confirm specifications prior to use.

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

ADC8004

Abstract: ADC8008 ADC8020 ADC3000 ADC4000 63E-15 ADC8003 ADC6001 ADC1000 adc801
Contextual Info: APPLIED SOLAR/ADVANCED bfl D • DATAIS Detector Arrays and Long-Line Strip Detectors G0GQ30S 7 ■ R E S P O N S IV IT Y C U R V E S TY PIC A L A D C offers silicon multi-element linear and matrix arrays with excellent blue response and element matching. Our

BC286

Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
Contextual Info: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l

TL 1074 CT

Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Contextual Info: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r