003S1 Search Results

SAE0700

Abstract: SAE 0700 ic sae 0700
Contextual Info: 47E J> SIEMENS A23SbOS 003S1Q7 H « S I E 6 SIEMENS AKTIENGESELLSCHAF Audible Signal Device SAE 0700 Bipolar 1C Features • • • • Direct AC-voltage feeding possible through integrated bridge rectifier Integrated overvoltage protection through Z-diode, approx. 28 V

770-003S100

Abstract: FED-STD-595 770-001S106R 770-001S105W2 770-001S104R 770-003S106 770-001S109W1 770-003S103R 770-001S106W1 770-003S102W1
Contextual Info: Shrink Boot Adapters 770-001S1 and 770-003S1 Type 1 High-Performance Elastomer Straight Lipped Adapter Shrink Boots, Standard Type 1 High-Performance Elastomer Boots for Advanced Temperature and Chemical Tolerance Semi-rigid high performance boots combine excellent resistance to fuels, oils and solvents

Contextual Info: Lipped Straight 770-001S1 and 770-003S1 Type 1 High-Performance Elastomer Straight Lipped Adapter Shrink Boots, Standard Type 1 High-Performance Elastomer Boots for Advanced Temperature and Chemical Tolerance Semi-rigid high performance boots combine excellent resistance to fuels, oils and solvents with

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

NPN Silicon Epitaxial Planar Transistor

Abstract: MZ0912B50Y TACAN
Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting

KM44V4100BS

Abstract: Oi24 A10QZ
Contextual Info: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.

OTF-655

Abstract: santec OTF potentiometer double optical tunable filter
Contextual Info: Welcome to OPTICAL COMPONENTS OPTOPIA New Product MOTORIZED OPTICAL TUNABLE FILTER OTF-655 Optical Specifications Parameter Tuning Range Resolution Return Loss Polarization Dependent Loss PDL Polarization Mode Dispersion (PMD) Maximum Input Power Operating Temperature

Contextual Info: a Am27X020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ — Factory optimized programm ing ■ ■ A s a Mask ROM alternative: — Shorter leadtime — Lower volum e per code

smd transistor 507

Abstract: transistor smd bh 250 B 340 smd Transistor BLT80 KM10 multilayer smd 809 x transistor BH Rf transistor
Contextual Info: jim i i vna DISCRETE SEMICONDUCTORS Product specification File under Discrete Semiconductors, SC08a May 1992 Philips Semiconductors PHILIPS • bbSHTBl 0035171 507 This Material Copyrighted By Its Respective Manufacturer Philip» Semiconductor« Product specification

automotive ignition

Abstract: CAR IGNITION BYX120G
Contextual Info: •f . 1 V» DISCRETE SEMICONDUCTORS itnlEET BYX120G EHT car ignition diode Preliminary specification File under Discrete Semiconductors, SC01 October 1991 Philips Semiconductors PHILIPS {3^53^31 003S 1M7 2 m This Material Copyrighted By Its Respective Manufacturer

SAB 0602

Abstract: SAB 529 siemens SAB 0600
Contextual Info: 47E D • Ö235b05 0035010 1 ■ S I E G SIEMENS AKTIENGESEL LSCH AF T' Three-Tone Chime Single-Tone Chime Dual-Tone Chime SAB 0600 SAB 0601 SAB 0602 Bipolar IC Features • • • • 7 1 ' 3 M elodious sound Few com ponents required Integrated output stage for 8 Q loudspeaker

transistor 1548 b

Abstract: OTF-655 PCB monitor spc D 1556 transistor d 1556 santec OTF 10 mm diameter stepper motor 1548 transistor d 1548 tunable ASE filter
Contextual Info: Welcome to OPTICAL COMPONENTS OPTOPIA New Product MOTORIZED OPTICAL TUNABLE FILTER OTF-655 Optical Specifications Parameter Tuning Range Resolution Return Loss Polarization Dependent Loss PDL Polarization Mode Dispersion (PMD) Maximum Input Power Operating Temperature

Contextual Info: P ro d u c ts P h ilip s S em icon du ctor* BLV12 VHF power transistor F EA T U R ES • Emitter-ballasting resistors lor an optimum temperature profile Q U ICK R E F E R E N C E DATA R F performance at = 25 °C In a common emitter test circuit. MODE O F OPERATION

km44v4104bk

Abstract: KM44C4104
Contextual Info: K M 4 4 V 4 10 4 B K CMOS D R A M ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

MIMI Ti PROM programming procedure

Abstract: murata 55E ceramic filter RA20A murata 7nb PROM programming instructions
Contextual Info: blE ]> • H MM'ibSOH 0 03505b 773 ■ H I T 3 D 4 0 4 0 1 9 / H D 4 0 7 4 0 1 9 D escription The HD404019 an d HD4074019 are HMCS400series CMOS 4-bit single-chip m icrocom ­ puters. E ach device incorporates a ROM, RAM, I/O, serial interface, an d 2 tim e r/

Contextual Info: Advanced Micro Devices Am27X1024 1 Megabit 65,536 x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optimized programm ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: A ^ ^ Tentative Specifications R EV.B Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M 16 C / 6 2 G ro u p SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER & Description Description The M16C/62 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

Contextual Info: N E C ELECTRONICS INC blE ]> • NEC NEC Electronics Inc. bM27S25 003517b 201 « N E C E fiPD431016 65,536 x 16-Bit Static CMOS RAM Description Pin Configurations The pPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology,

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

Contextual Info: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for

dell lcd 17 power supply diagram

Abstract: sharp LQ0 LCD DISPLAY MODULE sharp LQ0 BELL MOUTH DELL WS 390 lcd inverter HIU-288 TFT 3 canon TRANSISTOR c104 GS42 SM02
Contextual Info: PREPARED Bf APPROVED BY DATE : No. No. ISSUE : PAGE : SPEC FILE SHARP DATE TFT LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION LCY-99073 May. 26. 1999 18 pages DEVELOPMENT ENGINEERING DEPT. II TFT DIVISION. 1 S P E C I F I C A T I O N DEVICE SPECIFICATION FOR

Contextual Info: C u s t o m e r P r o c u r e m e n t S p e c if ic a t io n < £ > 2 iL C E Z86C83/C84 Z8 MCU M ic r o c o n t r o l l e r s FEATURES RAM* Bytes I/O Lines Voltage Range • Device ROM (KB) Six Vectored, Prioritized Interrupts from Six Different Sources