003S1 Search Results

SAE0700

Abstract: SAE 0700 ic sae 0700
Contextual Info: 47E J> SIEMENS A23SbOS 003S1Q7 H « S I E 6 SIEMENS AKTIENGESELLSCHAF Audible Signal Device SAE 0700 Bipolar 1C Features • • • • Direct AC-voltage feeding possible through integrated bridge rectifier Integrated overvoltage protection through Z-diode, approx. 28 V

770-003S100

Abstract: FED-STD-595 770-001S106R 770-001S105W2 770-001S104R 770-003S106 770-001S109W1 770-003S103R 770-001S106W1 770-003S102W1
Contextual Info: Shrink Boot Adapters 770-001S1 and 770-003S1 Type 1 High-Performance Elastomer Straight Lipped Adapter Shrink Boots, Standard Type 1 High-Performance Elastomer Boots for Advanced Temperature and Chemical Tolerance Semi-rigid high performance boots combine excellent resistance to fuels, oils and solvents

Contextual Info: Lipped Straight 770-001S1 and 770-003S1 Type 1 High-Performance Elastomer Straight Lipped Adapter Shrink Boots, Standard Type 1 High-Performance Elastomer Boots for Advanced Temperature and Chemical Tolerance Semi-rigid high performance boots combine excellent resistance to fuels, oils and solvents with

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

NPN Silicon Epitaxial Planar Transistor

Abstract: MZ0912B50Y TACAN
Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting

KM44V4100BS

Abstract: Oi24 A10QZ
Contextual Info: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.

OTF-655

Abstract: santec OTF potentiometer double optical tunable filter
Contextual Info: Welcome to OPTICAL COMPONENTS OPTOPIA New Product MOTORIZED OPTICAL TUNABLE FILTER OTF-655 Optical Specifications Parameter Tuning Range Resolution Return Loss Polarization Dependent Loss PDL Polarization Mode Dispersion (PMD) Maximum Input Power Operating Temperature

Contextual Info: a Am27X020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ — Factory optimized programm ing ■ ■ A s a Mask ROM alternative: — Shorter leadtime — Lower volum e per code

SAB 0602

Abstract: SAB 529 siemens SAB 0600
Contextual Info: 47E D • Ö235b05 0035010 1 ■ S I E G SIEMENS AKTIENGESEL LSCH AF T' Three-Tone Chime Single-Tone Chime Dual-Tone Chime SAB 0600 SAB 0601 SAB 0602 Bipolar IC Features • • • • 7 1 ' 3 M elodious sound Few com ponents required Integrated output stage for 8 Q loudspeaker

transistor 1548 b

Abstract: OTF-655 PCB monitor spc D 1556 transistor d 1556 santec OTF 10 mm diameter stepper motor 1548 transistor d 1548 tunable ASE filter
Contextual Info: Welcome to OPTICAL COMPONENTS OPTOPIA New Product MOTORIZED OPTICAL TUNABLE FILTER OTF-655 Optical Specifications Parameter Tuning Range Resolution Return Loss Polarization Dependent Loss PDL Polarization Mode Dispersion (PMD) Maximum Input Power Operating Temperature

Contextual Info: P ro d u c ts P h ilip s S em icon du ctor* BLV12 VHF power transistor F EA T U R ES • Emitter-ballasting resistors lor an optimum temperature profile Q U ICK R E F E R E N C E DATA R F performance at = 25 °C In a common emitter test circuit. MODE O F OPERATION