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    003513B Search Results

    003513B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TCA2365

    Abstract: A235L Z/Tda 7923
    Contextual Info: M7E Û235b05 D SIEMENS it 003513b S I SIEG AKTIENGESELLSCHAF TCA 2365 Dual Power Operational Amplifier Bipolar 1C Features • • High output peak current of twice 2.5 A Wide supply voltage range, 8 V to 32 V • • • Outputs entirely protected DC short-circuit proof


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    235b05003513bq67000-a1876q67000-a8017+8p-dip-18-l-9p-dip-18l-9fi23sbost-79-23ied0051tca2365a235lz/tda 7923 PDF

    Contextual Info: < £ Z i I ß Technical Manual G November 1989 Z80180 Z180 MPU FEATURES: • • • • • • Operating Frequency to 10 MHz On-Chip MMU Supports Extended Address Space Two DMA Channels On-Chip Wait State Generators Two UART Channels Two 16-Bit Timer Channels


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    z8018016-bit10mhzz8018008psc PDF

    Contextual Info: PRELIMINARY Am79C970A Advanced Micro Devices PCnet -PCI II Single-Chip Full-Duplex Ethernet Controller for PCI Local Bus Product DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller fo r the Periph­ eral Component Interconnect PCI local bus


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    am79c970a10base-tpqb132oooooofloooofl00d+116-0000038-pqb-1 PDF

    km44v4104bk

    Abstract: KM44C4104
    Contextual Info: K M 4 4 V 4 10 4 B K CMOS D R A M ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    km44v4km44v4104bkdd3514l7tb4142+2d03s147km44c4104 PDF

    PAL24V10

    Contextual Info: COM’L: H-15/25 ry Advanced Micro Devices PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology


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    h-15/25palce24v1oh-15/2528-pin+312222e-15025752bpal24v10 PDF

    NPN Silicon Epitaxial Planar Transistor

    Abstract: IEC134 MZ0912B100Y TACAN
    Contextual Info: Philip»Componant» Data sheet oc I •talus Prefimìrtaiy specification dele of Is m m July 1900 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting


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    mz0912b100ynpn silicon epitaxial planar transistoriec134tacan PDF