003300 Search Results

Contextual Info: RAD I ALL TECHNICAL DATA SHEET 3 GHz N N/O R573 003300 S.P.3T. Page 112 SWITCH OPTIONS R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 0 - 3 GHz 50 Ohms FREQUENCY GHz V.S.W.R D <= INSERT. LOSS <= ISOLATION 0 - 3 1.20 0.20 dB >= 80 dB AVER. POWER (#

Contextual Info: »21 RAD I A LL TECHNICAL DATA SHEET 5 0 0 TERMINATED N/0 N 3GHz R 5 7 4 003300 S.P.3T. Page SWITCH 112 OPTIONS : R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 0 - 3 GHz 50 Ohms make to V.S.W.R right INSERT. LOSS <= the ISOLATION >= 80 dB

D77C25

Abstract: 77c25 PD77C25 interfacing of RAM and ROM with 8085 JPD780 77C25 nec PD77P25 77P25C 77C20A EVAKIT-77C25
Contextual Info: N E C ELECTRONICS INC LIE D WË fc,M275E5 0033007 321 BINECE jjPD77C25/77P25 Digital Signal Processor NEC Electronics Inc. Description □ Drop-in com patible w ith 77C20A/7720A/77P20 ThepPD77C25 and/jPD77P25 Digital Signal Processors DSP are significant upgrades to the /uPD7720—the

2N5681 MOTOROLA

Abstract: SILICON DICE motorola DSL212
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC ^ I>E |b 3 b 7 2 5 5 0033005 1 DIODES/OPTO 34C 38005 D f-a i-n SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) 2C5682 DIE NO. — NPN LINE SOURCE — DSL212 T h is die provides perform ance similar to that of the following device types:

TW-219

Abstract: tw205
Contextual Info: IM PE D A N C E RATIO PRI : S E C CEN TER TAP PRI FREQ U eN CY BAN DW ID TH MHz for IN SERTIO N -LO SS FIG U RE (See PACKAG E SEC (MHz) 1dB 2 dB 3dB Below ) 1 1 1 1 2 2 156 156 156 156 156 156 1 3 156 156 156 156 No No No No No No Yes Yes Yes Yes No No .04-140

smd diode 1d

Abstract: diode smd 1D 3361d 2-13-1D 2-13-1W 2-16-6D 2-16-6W 3-16-1D 3-16-1W 3-36-1D
Contextual Info: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

AXP 188 ba

Abstract: 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c
Contextual Info: m DECchip 21071-AA, 21072-AA Core Logic Data Sheet m A p ril 1994 21071-AA, 21072-A A Features: • Supports the entire fam ily of the DECchip 21064 Alpha AXP m icroprocessors • DECchip 21071-AA: 128-bit cache/64-bit memory • DECchip 21072-AA: 128-bit cache/128-bit

SAB 82258

Abstract: sab82257
Contextual Info: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range

MD-720-3

Abstract: srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga
Contextual Info: CL-GD7548 * ’CIRRUS LOGIC9 A d v a n c e H a rd w a re Reference M a n u a l FEATURES • Single-chip XGA/Super VGA LCD controller — Pin-compatible superset of CL-GD7541/7543 SVGA LCD controllers G U I-A ccelerated X G A /S V G A LCD C on troller w ith Low -C ost M ultim edia

TLCS-470A

Contextual Info: TOSHIBA TLCS-470A Series TMP47C623/823 CMOS 4-Bit Microcontroller The 47C623/823 are high speed and high performance 4-bit single chip microcomputers based on the TLCS-470A series with a LCD driver, High Speed Event Counter and Pulse out­ put circuit. TMP47C623F, TMP47C823F

Contextual Info: DECchip 21171 Core Logic Chipset Technical Reference Manual Order Number: EC-QE18A-TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts aam i3t. 0 0 3 3 7 3 3 0 22 Preliminary—Subject to Change Ju ne 1995 W hile D igital believes th e inform ation in th is publication is correct as of th e d ate of publication,

12250

Abstract: Wideband T-12201 t12260 T-12209 12205 70080 5070d
Contextual Info: Wideband RF Impedance Matching Transformers Designed for use in 50 Ω Impedance RF, and Fast Rise Time, Pulse Applications. Isolation 1500VRMS minimum Operating Temperature Range: +0 to +70 oC NEW VERSION HIGH ISOLATION 1500VRMS minimum Electrical Specifications at 25o C

Contextual Info: 4-4 *R oH S CO M PL IA NT Features -1J • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

LT 5251

Abstract: DYNSLT ON5292 vn 530 sp 31 x 132 SC41-5715-00 BA 59 04 AFP LT 542 seven segment display data sheet 7 segment display LT 542 SST 90A 6B Diode NBR4
Contextual Info: AS/400e DDS Reference Version 4 AS/400e DDS Reference Version 4 Copyright International Business Machines Corporation 1999, 2000. All rights reserved. US Government Users Restricted Rights – Use, duplication or disclosure restricted by GSA ADP Schedule Contract

Contextual Info: HM5116405I Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-757A Z Rev. 1.0 Mar. 17,1997 Description The Hitachi HM51164051 Series is CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51164051 Series

Contextual Info: TRANSFORMERS L eadless S urface-M ount M odels IMPEDANCE RATIO PRI: SEC 1:1 CENTER TAP SEC FREQUENCY MHz IdB BANDWIDTH (MHz) for INSERTION-LOSS 2dB 3dB FIGURE (See Below) .003-300 .01-150 .120-300 2.2-400 .003-300 .075400 .650-525 2 2 134 134 134 2 2 ST-K1

Contextual Info: COM P L E T E RA N GE 1 4 RIEDEL – Energy for a better solution! 4 l General information 12 l Single-phase transformers 24 l Three-phase transformers 32 l DC supplies / battery chargers 46 l Uninterruptible power supplies 52 l Variable ratio ring transformers

TX-205

Abstract: TX-209
Contextual Info: TRANSFORMERS PLASTIC FLAT-PACK MODELS IMPEDANCE RATIO PRI : SEC CENTER TAP PRI SEC FREQUENCY MHz 1dB BANDWIDTH (MHz) for INSERTION-LOSS 2dB 3dB FIGURE (See Below) PACKAGE PIN-OUT (See Below) MODEL 1:1 No Yes .04-140 .100-55 .05-100 .04-140 1 116 1 TX-207

Contextual Info: MB91550 Series 32-bit Microcontroller FR Family FR81S MB91F552 Data Sheet Full Production Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume

B1303

Abstract: FC250B1 UL-1950
Contextual Info: Data Sheet July 1998 Lucent Technologies Bell Labs Innovations FC250B1 Power Module: dc-dc Converter; 18 Vdc to 36 Vdc Input, 12 Vdc Output; 250 W Features • Size: 61.0 mm x 116.8 mm x 13.5 mm 2.40 in. x 4.60 in. x 0.53 in. ■ Wide input voltage range

oy 519

Contextual Info: MAE » • 2 b l S cîtî4 00004^5 IbT «1>ALS DALSA INC. o yy CCD Image Sensors |T-C5 TURBOSENSOR - ^ T M \-5 S IT-C5-2048, -4096 Variable Length Linear Image Sensor Arrays FEATURES_

KM44V16104AK

Abstract: samsung dram
Contextual Info: KMM372F3200AK2 DRAM Module ELECTRONICS KMM372F3200AK2/AS2 & KMM372F3280AK2/AS2 Fast Page with EDO 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: MITSUBISHI LSIs Some contents are subject to change without notice. MH1 S64CXJJ-12,-15 67108864-B IT 1048576-W Q RD BY 64-BIT SynchronousDRAM DESCRIPTION The MH1S64CXJJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1Mx16 Synchronous DRAMs in

2N2905

Abstract: PN2905 T0-92A
Contextual Info: 2N/PN2905 PNP SILICON TRANSISTORS transistors. stage of power It is intended amplifiers for and PN29Q5 T0-92A 2N2905 TO-39 2N/PN2905 are PNF silicon planar epitaxial ~ driver switching applications. EBC ABSOLUTE MAXIMUM RATINGS 2N2905 PN2905 Collector-Base Voltage