0024T Search Results

BQX54

Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
Contextual Info: • bhS3^31 0024tD'ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

Transistor S 40443

Contextual Info: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures

cheminax

Abstract: Dielectrics rayfoam
Contextual Info: SPECIFICATION CONTROL DRAWING CHEMINAX 100 OHM, AWG 24, 19 STRANDS OF AWG 36, RADIO FREQUENCY, TWO CONDUCTOR CABLE 0024T1426 Date: 5-17-06 Revision: B THIS SPECIFICATION SHEET FORMS A PART OF THE LATEST ISSUE OF RAYCHEM SPECIFICATION 1200. CONSTRUCTION DETAILS

ksr1206

Contextual Info: KSR1206 NPN EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10KQ, R ,=47 K 0) • Complement to KSR2206 TO-92S ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

5962-9310504QXA

Abstract: MG80486DX-25 mg80486DX-33 MG80486DX33 59629310506QXA MG80486 80486dx33 TA80486DX266 80486DX-25 5962-9310505QXA
Contextual Info: REVISIONS LTR DESCRIPTION Add devices 03, 04. throughout. DATE YR-MO-DA Editorial changes Add devices 05, 06, 07, 08. throughout. Editorial changes Add device types 09 and 10. Update boilerplate. APPROVED 94-03-23 Monica L. Poelking 96-03-28 Monica L. Poelking

Contextual Info: ZILOG INC LIE D TRfiMOMB DDEMfl'IS H E «ZIL PRELIMINARY PRODUCT SPECIFICATION < $ 3 1 1 3 5 Z84C50 June 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function

Contextual Info: MITSUBISHI MICROCOMPUTERS 7510 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION • The 7510 group is the 8-bit microcomputer based on the 740 family core technology. This microcomputer is equipped with added functions such as a dot matrix type LCD controller/driver built in a contrast

Contextual Info: P ^ p i G E C P L E S S E Y S E M I C O N D U C T O R S DS3592-4.6 MA28139 OBDH BUS TERMINAL The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal

Contextual Info: Data Sheet March 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations L7556, L7557 Low-Power SLICs with Battery Switch Features Description • Auxiliary input for second battery, and internal switch to enable its use to save power

M37500M8

Contextual Info: MITSUBISHI MICROCOMPUTERS 7500 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION • 2 C lo c k gen e ra tin g circuit T h e 7 5 0 0 group is th e 8 -b it m icro com puter b a s e d on the C o n n e c t to external c era m ic resonator or quartz-crystal

Contextual Info: KSR2111 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=22K f!) • Complement to KSR1111 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: KSA931 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • Complément to KSC2331 • Collector-Base Voltage V c b o = - 8 0 V • Collector Dissipation Pc = 1W ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating

Contextual Info: HM67A4257 Series 262144-word X Preliminary 4-bit I/O Separate Clocked Random A ccess Memory Features Pin Arrangement • 262144-word X 4-bit organization • Directly TTL compatible input and output • Choice of 5.0V or 3.3V power supply for output buffers

Contextual Info: HM62W8127H Series HM62W9127H Series Preliminary 131072-word x 8/9-bit High Speed CMOS Static RAM T he H M 62W 8127H /H M 62W 9127H is an asyncronous 3.3 V operation high speed static RAM organized as 128 kword x 8/9 bit. It realize high speed access tim e 25/30/35/45 ns with

Contextual Info: Or, Cali Customer Service at 1-806-548-6132 USA Only OPA541 BURR-BROWN m AVAILABLE IN DIE FEATURES APPLICATIONS • • • • • • • • • • • POWER SUPPLIES TO ±40V OUTPUT CURRENT TO 10A PEAK PROGRAMMABLE CURRENT LIMIT INDUSTRY-STANDARD PIN OUT

Contextual Info: OPA2541 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES DESCRIPTION • • • • The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two mono­

Contextual Info: D A T A S H E E F BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC 1 1 0 0 „u P C 1 1 5 0 DUAL SWITCHING REGULATOR CONTROL CIRCUIT D E S C R IP T IO N The //PC1100, /iPC1150 are PWM type dual switching regulator control circuits which incorporate 2.5 V voltage reference,

Contextual Info: HM62256A Series 32,768-w ord x 8-bit H igh S p e e d C M O S S ta tic RAM The Hitachi HM 62256A is a CMOS static RAM organized 32-kw ord x 8-bit. It realizes higher p e rfo rm a n c e an d low p o w e r c o n su m p tio n by employing 0.8 im Hi-CMOS process technology.

qml-38535

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Changes to conditions in Table I, addition of Test condition 2 in Figure 4. Editorial changes throughout. APPROVED 96-11-13 Thomas M. Hess REV SHEET REV A A A A A A A SHEET 15 16 17 18 19 20 21 REV STATUS OF SHEETS

HM628128

Abstract: hm628128-10 HM628128LP-8 M628128 DP-32 HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128FP-8 HM628128P-10
Contextual Info: HM628128 Series 131072-word x 8-bit High Speed CMOS Static RAM The Hitachi HM628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 |xm Hi-CMOS process technology.

Contextual Info: Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations L7581 Ringing Access Switch Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Low impulse noise ■ Make-before-break, break-before-make operation

OPA02

Abstract: buf634 buf634 application
Contextual Info: BUF634 BU RR - BROW N AV A ILA BLE IN DIE 250mA HIGH-SPEED BUFFER FEATURES APPLICATIONS • HIGH OUTPUT CURRENT: 250mA • SLE W RATE: 2000V/fis • PIN-SELECTED BANDWIDTH: 30MHZ/180MHz • LOW QUIESCENT CURRENT: 1.5mA 30MHz BW • W IDE SU PPLY RANGE: ±2.25 to ±18V

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

NF24Q100

Abstract: arinc 810 BPS-C-179 nf26q100 CEC-RWC-18687 NF24Q100 Tensolite raychem catalog termination kit raychem high voltage cable termination kit F4704 Radiall arinc 600 back shell
Contextual Info: AMP General Purpose Rectangular GPR Connectors General Purpose Rectangular (GPR) Connectors Table of Contents Introduction ………………………………………………………………………………………3-4 Performance Characteristics………………………………………………………………………5