0024B Search Results

M66253FP

Contextual Info: bSH^öES 0024b30 433 BSHIT1 5K BYTE X 2 FIFO MEMORY I SEMICONDUCTOR TWO BUILT-IN 5K BYTE FIFO MEMORY CIRCUITS HIGH-SPEED FIFO MEMORY SUITABLE FOR DIGITAL PLAIN-M PER COPIERS Ne w s M66253FP The M 66253FP is designed to operate at higher speeds than the conventional

Transistor AC 187

Abstract: AC 187 npn transistor TO 1 187 transistor npn
Contextual Info: • Philips Semiconductors bb53T31 0024bfll 175 HIAPX N AMER PHILIPS/DISCRETE Product specification b?E ]>' NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

transistor T43

Contextual Info: Philips Semiconductors bbSS'Ol 0024b4fl T43 H A P X N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor DESCRIPTION Preliminary specification fc,7E D BF547W PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer,

MSM66101

Abstract: MSM66G101VS
Contextual Info: O K I Semiconductor MSM66101 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION Tlic MSM66I01 is a high performance microcontroller that em p loys OKI original nX -8/lU 0 CPU core. This chip consists o f a 16-bit ALU, 12K bytes of m ask program ROM, 384 bytes of data RAM,

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

MSM5117405

Abstract: MSM5117405B
Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson esssar OPA64Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • COMMUNICATIONS • MEDICAL IMAGING • TEST EQUIPMENT UNITY-GAIN BANDWIDTH: 1.3GHz UNITY-GAIN STABLE

Contextual Info: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05°

Contextual Info: Or, Call Customer Service at 1-8B0-548-S132 USA f l/ i/ y j B U R R -B R O W N i OPA628 OPA628 FEATURES APPLICATIONS • • • • • BROADCAST QUALITY VIDEO • • • • • EXCELLENT DIFFERENTIAL GAIN: 0.015% EXCELLENT DIFFERENTIAL PHASE: 0.015°

Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

Contextual Info: BURR - BROW N G | O B OPA675 OPA676 | Q AVAILABLE IN DIE OPA675/676 Dr, Call Castomr Serme ut 1-80II-548-6132 USA Only OPERATIONAL AMPLIFIERS Wideband Switched-lnput OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • FAST SETTLING: 9ns (1%) • PROGRAMMABLE-GAIN AMPLIFIER

Contextual Info: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

5962-9310504QXA

Abstract: MG80486DX-25 mg80486DX-33 MG80486DX33 59629310506QXA MG80486 80486dx33 TA80486DX266 80486DX-25 5962-9310505QXA
Contextual Info: REVISIONS LTR DESCRIPTION Add devices 03, 04. throughout. DATE YR-MO-DA Editorial changes Add devices 05, 06, 07, 08. throughout. Editorial changes Add device types 09 and 10. Update boilerplate. APPROVED 94-03-23 Monica L. Poelking 96-03-28 Monica L. Poelking

Contextual Info: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.

BF550

Abstract: transistor marking code 325 0024-B
Contextual Info: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

R5F21368snfp

Abstract: 06B2D 0025DH 00285H
Contextual Info: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

06B2D

Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

06B2D

Abstract: p9530 0023AH 0025DH 00285H
Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

R5F21368snfp

Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

Contextual Info: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power

KSR1004

Abstract: KSR2004
Contextual Info: KSR1004 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(Ri=47KÍÍ, R¡ = 47KÍ2) • Complement to KSR2004 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

KSA708

Abstract: KSC1008
Contextual Info: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage