0024B4B Search Results

Contextual Info: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: OPA622 Or, Call C ustom Service at 1-80U-548-6132 USA Only APPLICATIONS • • • • • SLEW RATE: 1500V/ns (AP), 1700V/HS (AU) • DIFFERENTIAL GAIN: 0.15% • DIFFERENTIAL PHASE: 0.08° • EXCELLENT BANDWIDTH/SUPPLY CURRENT RATIO: 200MHz/5mA • LOW INPUT BIAS CURRENT: -1.2|iA

Contextual Info: PD - 9.1333B International IQR Rectifier IR LR /U 3103 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Ultra Low On-Resistance • Surface Mount IRLR3103 • Straight Lead (IRLU3103) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated