0017B Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES

2SC2797

Abstract: SR1FM transistor power 5w NPN EPITAXIAL PLANAR TYPE 175mhz 1w
Contextual Info: • b2»H flE«ï 0017b? ALT M ITSU BISHI RF PO W ER TR A N SISTO R h 2S C 2 797 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in UHF band. Dim ensions in mm

OF4456

Abstract: F65L
Contextual Info: M ITSUBISHI LSIs bEH'lßEß 0017b35 530 « Î 1 I T 4 I M5M82C800FP MI TS UB I S H I IUCMPTR/niPRC CMOS PROGRAMMABLE DMAC,IRC,TIMER DESCRIPTION The M 5 M 8 2 C 8 0 0 F P is a CM O S LSI equivalent to tw o M 5 M 8 2 C 3 7 A -5 , tw o M 5 M 8 2 C 5 9 A -2 , and one M 5 M 8 2 C 5 4 .

Contextual Info: 0 1 -0 CD54/74HC173 CD54/74HCT173 File Number 1641 High-Speed CMOS Logic 0017b3T T B HAS Technical D ata . Quad D-Type Flip-Flop, 3-State Positivo-Edge Triggered M3D2271 T y p e Features: • 3-state buffered outputs ■ gated input and output enables 9 2 C S -3 0 4 5 6

247AA

Abstract: TO-247AA TO-247-AA ultrafast dual diode 15 amp. 300 volts 16JPF20 16CPF10 16CPF20 16CPF30 16CPF40 FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER
Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4ÔS54SS 0017b73 Tib ■ INR Data Sheet No. PD-2.193 INTERNATIONAL RECTIFIER IO R n 6CPF & 1 6JPF SERIES *l 6 Amp Fast Recovery Dual Center Tap Rectifiers Major Ratings and Characteristics 16CPF10 16CPF20 16JPF10 16JPF20 'o

Contextual Info: Multilayer Chip Beads BMB-B Series 50 Specification Characteristic Rated DC Resistance Curves Current mA (ohms) See Page maximum maximum. Part Number Impedance (ohms) at 100MHz BMB-1J-0005B-N3 BMB-1J-0017B-N3 BMB-1J-0030B-N3 BMB-1J-0070B-N3 BMB-1J-0100B-N3

BUX14

Abstract: BR 4008 transistor BUX14
Contextual Info: Z E SOLID STATE OÏ 387508 f'G E SOLID STATE . . — . ' DlT| 3fl7S0fll 0017bGD L, | ~ 01E 17600 • File Num ber '1203 Silicon N-P-N r* . . . .i • . Switching Transistor D Pro Electron Power Transistors BUX14 TERMINAL DESIGNATIONS For High-Voltage Switching and

BFG91

Abstract: transistor 115 55e BFG23 7z941 transistor 115 25e TRANSISTOR A107
Contextual Info: •I 1^53=531 0017b47 N AUER P H I L I P S / D I S C R E T E BFG23 3 ■ 55E P T - 3 / - / 5 T P-N-P 2 GHz W IDEBAND T R A N SIST O R P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application In wideband amplifiers, such as M A T V and C A T V systems, up to 2 GHz.

Contextual Info: öl E SOLID STATE 3875081 m T | 3ñ750fll 0017b4 3 5 G E SOLID STATE 0 1 E 17643 Ultra-Fast-Recovery Rectifiers- BYW51-100, BYW51-150, BYW51-200 D File Number 1412 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers T E R M IN A L D E S IG N A T IO N S

8YW51-150

Abstract: 8YW51 RUR820 RUR-810 BYW51-100 d810 BYW51 BYW51-150 BYW51-200 RUR-D815
Contextual Info: 38 75081 m T | 3ñ750fll 0017b43 5 öl E SOLID STATE G E S O L I D S TA TE 01E Ultra-Fast-Recovery Rectifiers- 17643 BYW51-100, BYW51-150, BYW51-200 File Num ber 1412 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers

17312

Abstract: 0017B
Contextual Info: D EjTCnTeSO 9097250 T O S H IB A 99D < D IS C R E T E /O P T O > 0017B ll 17311 O D T -4 M I TLNI05A GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR. REMOTE CONTROL SYSTEM OPTICAL SWITCH • Output Spectrally Compatible with Silicon Sensor IPS703, TPS703A

KM611001

Abstract: KM611001-20 KM611001-25 KM611001-35
Contextual Info: SAMSUNG ELECTRONICS INC b?E D m T'ìbMmE 0017b41 3 30 • CMOS SRAM KM611001 1 MX 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)

KM681002J-15

Abstract: KM681002J-20 256X8 KM681002J-17 samsung chip 820
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM681002 0017bñ4 72b PRELIMINARY SMGK CMOS SRAM 131,072 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.)

Contextual Info: SAHSUN6 ELECTRONICS INC b?E D m 7^4142 0017bSS Ì2 5 • SH6K PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.)

D2E transistor

Abstract: sumida 455 using ta7358 TA8100F 2157-2239-213A TA7358 TOSHIBA Mitsumi amplifier de RF mitsumi ift coil IFT 455 sumida ift coil
Contextual Info: B B BBS TOSHIBA-. ELECTRONIC 02 dT • | TDTTHMV 0017b03 0 02É 17683 T-77-05-07 TA8100N/F \ 3V AM/FM IF IC WITH POWER AMPLIFIER Unit in mm TA8100N/F is AM/FM IF XC with power amplifier and suitable for low voltage portable radio. This IC is able to drive LED for Turning Indication.

8051 microcontroller LED dot matrix

Abstract: REL316 bdl 39 jb ds8qc T2D8 microcontroller 8051 application of alarm clock countdown timer using 8051 microcontroller tft interface with 8051 8051 based 20 pin Ic Digital countdown timer DS82CH
Contextual Info: DS80CH10/DS82CH10/DS80CL10/DS82CL10 P R E L IM IN A R Y n . | . A O DS80CH10/DS82CH10 DS80CL10/DS82CL10 Green Energy Manager UALLAO s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V

KM68B261A-6

Abstract: KM68B261A-7 KM68B261A-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)

Contextual Info: LT1507 u r m TECHNOLOGY 500kHz M o n o lith ic Buck M o d e S w itching R egulator F€RTUR€S • Constant 500kHz Switching Frequency ■ Uses All Surface Mount Components ■ Operates with Inputs as Low as 4V ■ Saturated Switch Design 0.30 ■ Cycle-by-Cycle Current Limiting

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

Z86e4012

Abstract: Z86E40 SXGR 86E4012
Contextual Info: ZIL06 INC 30E D B =1=104043 D017b24 -1. » Z I L - T -4 9 -1 9 -0 7 P r o d u c t S p e c if ic a t io n Z8ÌE40 CMOS Z8 OTP CCP MICROCONTROLLER FEATURES • 8-bit CMOS microcontroller ■ Digital inputs CMOS levels, Schmitt triggered

Contextual Info: T -m o-o^-o ñ Technical Data CD54/74HC165 CD54/74HCT165 F ile N u m b e r 1672 High-Speed CMOS Logic HARRIS SEMICQND SECTOR 27E D M302271 G017b27 2 I H AS 8-Bit Paraliel-ln/ Serial-Out Shift Register T y p e F ea tu res : • B u tte re d In p u ts ■ A s y n c h ro n o u s P a ra lle l L o a d

IC - 74HC191

Abstract: 74HC191 PC 74 HCT 32 P
Contextual Info: T - H 5 -2 .3 - Technical D ata . CD54/74HC190, CD54/74HCT190 CD54/74HC191, CD54/74HCT191 HARRIS SEMICOND SECTOR 27E File Number 4302271 D 1662 DD17bh7&#39; 3 H B H A S High-Speed CMOS Logic 8 C 0 /B IN A R Y PRESET Presettable Synchronous 4-Bit Up/Down Counters

Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of