0013Q Search Results

1Q056

Contextual Info: 1. D im e n s i o n s : 3. E l e c t r i c a l A ± 0 .0 1 0 0 .720 Isolation: S p e c i f i c a t i o n s : 25°C 1 5 0 0 V rm s PRI to c :.240 TX T urns Ratio: 0 .0 0 4 E 0 .0 5 0 I T Min 0 .0 2 5 —H - XFMRS WWW PRI OCL: C w /w : Max PRI CO XF 0013Q S 15E

XF0013Q

Abstract: 208H
Contextual Info: 1. M echanical D im ensions: 3. E lectrical Isolation: 1,115 Max 1 5 0 0 V rm s PRI to Turns Ratio: PRI OCL: $ 0 ,0 3 5 — tr X XFMRS Ö yyww • 0013Q16 Jfj -H £ I— 0 ,0 5 0 F —H b - Pri DCR: 0 .8 0 Sec Ohm s Max DCR: 1.15 O hm s Notes: 1. Solderabllity: Leads shall meet MIL-STD-202G,

XF001

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : 25 C Is o la tio n : A 1.1 15 Max 1 5 0 0 V rm s PRI to TX T urns Ratio: 1:2 (PRI:5EC RCV Turns Ratio: PRI OCL: 0 .0 3 5 ——| I— 0,004 E 0 .9 5 0 0 .0 2 5

2m137

Contextual Info: MT90733 CM OS @ DS3 Framer DS3F MITEL Preliminary Information Features ISSUE 3_ January 1996 M aps broadband payloads in the DS3 form at O rdering Inform ation DS3 payload access in eith er bit-serial or n ibble-parallel m ode MT90733AP 68 Pin PLCC

003-H

Contextual Info: 1. M e c h a n i c a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C ISOLATION: 1500Vrms, PRI to SEC 1 .1 1 5 Max TURNS RATIO <TX ; P R I:S E C )= 1 :1 .1 4 TURNS RATIO (RCV): (PRI:SEC)=1:1.14 PRI 0CL: 1,50mH Typ @100KHz 50mV

p26 smd

Abstract: 208H
Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l A 1 .1 1 5 Max Isolation: 1 5 0 0 V rm s PRI to TX T urns Ratio: 0 .0 3 5 - I U 0,004 Min E '0 . 9 5 0 ' HR RHH IRR RBI X XFMRS yywwW o -H— '0.030 m m i m <d a d 1:1CT ±3% PRI OCL: M inim um

Contextual Info: JV\Æ XAJV\ k -to-M icrow ave, Low -Noise A m plifier _General Description ♦ Single +5V Supply Operation In a typical application, the only external components needed are input and output blocking capacitors and a V c c series resistor. To im prove gain and output

Contextual Info: 3. E l e c t r i c a l 1. D im e n s i o n s : Isolation: A '1 .1 0 Typ' o S p e c i f i c a t i o n s : @25°C 1500 Vrm s PRI to SEC TX Turns Ratio: 1CT:1±3% (PRkSEC) o n X CM RCV Turns Ratio: Jh O 0 .0 3 5 1CT: 1 ±3% (PRkSEC) TX PRI 0CL: 1.20mH M inim um @100KHz 50m V

XF0013Q2B

Contextual Info: 1. M e c h a n i c a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C ISOLATION: 1500Vrms, PRI to SEC 1 .1 1 5 Max TURNS RATIO <TX ; PRI:SEC)=1:1.41 4 TURNS RATIO (RCV): (PRI:SEC)=1:1.414 0.004 E 0 .9 5 0 HRRRRHRHRBHRHRBHRHHFI

XF0013Q5B

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : 25°C Is o la tio n : 1 .1 1 5 Max TX T urns R atio: 0 .0 3 5 — I I— _ E 0.004 _ 0 .9 5 0 □□□□□□□□□□□□□□□□□□□□

DIODE T25 4 Jo

Abstract: 2SK556 2SK557 H909 Hitachi Scans-001
Contextual Info: blE D 44*11,505 0 0 1 3 m i G74 « H I T 4 2SK556,2SK557 „m C H I/C O P TO EU C TK O H I« SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low O n-R esistance. High S peed Switching. Low Drive Current. No Secondary Breakdown.

TV power transistor akira 21

Abstract: AN8130K 32LSB akira tv
Contextual Info: Panasonic A /D and D /A Converters AN 8130K High-speed Low Power Consumption 10-bit A/D Converter • Overview The AN8130K is a 10-bit A/D converter for image pro­ cessing which has realized low power consumption by using the Bi-CMOS process. ■ Features

SSI 091

Abstract: AmPAL22V10 PAL22V10
Contextual Info: GOUL D INC/ GO U L D A II I •> GOULD AMI«Semiconductors 4DE D MDSSIlb ODIBODH ? « A M I CMOS Programmable Electrically Erasable Logic Device ProductPreview PEELra22GY1Q-15 ~ \ T -4 6 -1 9 -0 7 Features — Variable product term distribution 8 to 16 per

Contextual Info: lOOOpF ; 2KV E LE C T R IC A L SPECIFICATIONS! 1 .0 N f lT F S P3-P2-P1 I (J2-J1) I 1CT ! 1 ± 37. 2,0 INDUCTANCE (P6-P4) I 350uH MIN, (2 0,1V (P3-P1) 3,0 L E A K A G E IN D U C T A N C E P 6 - P 4 (W ITH J 6 AND J 3 SHEIRT) 4.0 IN T E R W IN D IN G C A P A C IT A N C E (P 6 ,P 5 ,P 4 > TD (J 6 ,J 3 >

2SK317

Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Contextual Info: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •

2SK317

Abstract: zenner 10v 2sk317 hitachi
Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

Contextual Info: Dual-channel, radio cassette preamplifier BA3423AS The BA3423AS 1C is dual-channel, high-gain, low-noise preamplifier designed specifically for radio dual cassette stereo players. Dimensions Units : mm BA3423AS (SDIP32) 28.0±0.3 The replay, record, inputs and outputs

Contextual Info: 1. M echanical D im ensions: 3. E lectrical Sp ecification s: 25°C Isolation: 1500Vrms, PRI to SEC 1.1 15 Max TX T urns R atio: 1 :2 .4 PRI:SEC RCV Turns R atio: 1:1 PRI OCL: Typical @10DKHz 5 0 m V 1.50m H (PRkSEC) C w /w : 3 5pF Max @ 100KHz PRI LL: 0 ,5 u H

planar trans

Abstract: L64811 VA1112 l64863
Contextual Info: LSI LOGIC SBGHÖQM ÜÜ13GS3 ÖT3 miLC L 64860 E rror C orrectin g M em ory C on troller EMC T echnical M anual * mm* e * &’ à & 5 3 0 4 6 0 4 0 0 1 3 0 5 4 73T LLC LSI Logic has derived the material in this manual, which describes the L64860 Error Correcting Memory Controller, from documents provided by Sun Micro­

Contextual Info: LTC1481 / x u r m TECHNOLOGY Ultra-Low Power RS485 Transceiver with Shutdown FCflTUIteS DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ The LTC 1481 is an ultra-low power differential line trans­ ceiver designed for data transmission standard RS485 applications. It will also meet the requirements of RS422.

Contextual Info: PRELIMINARY M IC R O N I MT4LC1M16H5 1 MEg x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l Is o la tio n : 1.1 15 Max "O $¿j xa ] 0 .0 3 5 — H I— b . 0 0 4 Min j 1 0 .0 2 5 HHHHHBHHHHUñññUññññH X yywwS ^ uo o T FFFFW FFFTFFFTBTTTT — \\— G 0 -0 1 8 ± 0 -0 0 2 H h t -0 3 0

G030

Abstract: 208H
Contextual Info: 3. E l e c t r i c a l 1. M e c h a n ic a l D im e n s i o n s : Is o la tio n : 1,115 M ax S p e c i f i c a t i o n s : @25°C 1 5 0 0 V rm s PRI to TX T urns R atio: ° V 1 :1 .1 5 ± 3 % RCV Turns R a tio : O nj a 1 :1 .1 5 TX PRI OCL: 1 .2 0 m H 0 ,0 3 5 — 1 I—