0011BB Search Results

000-3FF

Abstract: MD1060
Contextual Info: MD1060 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low u power 4 types of oscillator can be selected by programming option: consump-tion and high noise immunity. On chip

SEIWG-005

Abstract: 1200VM vhf antenna mtbf SEIWG-005A LEMO WIRELESS BASE STATION STAR1200VM transceiver fsk baud carrier uhf base station RF front end
Contextual Info: STAR 1200VM Specification STAR 1200VM Base Station Specification Revision 2.7 November 13, 1997 Nova Engineering, Inc. 5 Circle Freeway Drive Cincinnati, Ohio 45246 Phone: 513-860-3456 Fax: 513-860-3535 www.nova-eng.com STAR 1200VM Specification 1 . Introduction

200H

Abstract: MDT10C22 PSC 10 289-M
Contextual Info: MDT10C22 XTAL－Standard crystal oscillator 1. General Description HFXT－High frequency crystal oscillator This ROM-Based 8-bit micro-controller uses a fully u 4 oscillator start-up time can be selected by static CMOS design technology to achieve high programming option:

MDT10P72

Contextual Info: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise

mdt1030

Abstract: 200H 400H TH156
Contextual Info: MDT1030 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 2.0 K bytes of ROM, and 80 bytes of static RAM.

910U

Abstract: ldr 6k MDT10P651
Contextual Info: MDT10P651 1. General Description -CCP1, CCP2, SCM, USAR, USAT, PCM u TMR0 : 8-bit real time clock/counter This EPROM-Based 8-bit micro-controller uses a fully static TMR1 : 16-bit real time clock/count CMOS technology process to achieve higher speed and TMR2 : 8-bit clock/counter internal

basic stamp BS2

Abstract: 10 switch coded 18 pin ic 1101BBB 18 PIN IC
Contextual Info: ✁ ✂ ✄ ☎ ✆ ✝ ✞ ✟ ✠ ✡ ☛ ☞ ☞ ☞ 1998 by AWC, All Rights Reserved AWC 310 Ivy Glen Ct. League City, TX 77573 stamp@al-williams.com http://www.al-williams.com/awc/awce.htm v1.1 25 Jan 99 ☞ ✌ ✍ ✎ ✏ ✑ ✒ ✏ ✓ ✔ ✕

MDT2010

Contextual Info: MDT2010 IB 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of

k/833 pin

Abstract: 200H 400H MDT1020
Contextual Info: MDT1020 u 4 oscillator start-up time : 150 µs, 20 ms, 40 ms, 80 ms 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS.

MDT10F630

Abstract: MDT10F630P11 MDT10F630P13 MDT10F630S11
Contextual Info: MDT10F630 automotive 1. General Description to low transmitters/receivers, power pointing remote devices, and This 8-bit Micro-controller uses a fully static telecommunications processors, such as Remote CMOS technology to achieve high speed, small controller,

Contextual Info: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),

MDT10P432

Abstract: S31-S38 mdt*10P432
Contextual Info: MDT10P432 1. 概述 上电复位 内部 RC 432K, 440K, 455K, 480KHz 在 OPTION 这个 8 位基本内存控制器是一个集高速体积小、低功 里选择 耗和抗高噪声一体的静态 CMOS 芯片。它包括 512 个字 系统时钟: 455KHz 晶振 OSC1 电容 50P; OSC2

MDT2010

Abstract: 3.0 N1
Contextual Info: MDT2010 JE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of

mdt10p621

Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high

MDT10P41A1P

Abstract: 200H MDT10P41A1
Contextual Info: MDT10P41A1 1. 概述 这个基于 EPROM 的 8 位控制器是一个集高 速体积小、低功耗和抗高噪声一体的静态 CMOS 芯片。内部 RC 振荡器。 它包括 1K EPROM 和 31 字节静态 RAM。 2. 特点 集成 CMOS 静态设计方案

Contextual Info: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

12OSC1

Abstract: MDT10P72 XT 4MHZ 20MHZ
Contextual Info: MDT10P72 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 －A／D 转换完成

cf 455

Abstract: MDT10P23
Contextual Info: MDT10P23 CF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref

MDT10P62

Abstract: MDT10P
Contextual Info: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

MDT10P65

Abstract: MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711
Contextual Info: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.

MDT10P05

Abstract: IC TTL 4700
Contextual Info: MDT10P05 BG 1.概述 这个 8 位基本内存控制器是一个集高速体 积小、低功耗和抗高噪声一体的静态 CMOS 芯片。它包括 0.5K ROM 和 32 字节静态 RAM。 四种可选振荡器起始定时器定时时间：150 s，20ms，40ms，80ms

20MHZ

Abstract: 100nnn
Contextual Info: MDT10P621N AB 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

LCD09

Abstract: MDT11P0122LQ11 R107H r11ah LCD05 DL05 MDT11P0122 LCD02 R89H DL050
Contextual Info: MDT11P0122 1. 概述 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功 耗和高抗干扰性一体的芯片。内存包括 4K MDT11P0122 的应用范围从发动机控制器， 高速自动电机（电车）到低电源遥控发射、接

MDT10P72

Abstract: DC MOTOR SPEED CONTROLLER
Contextual Info: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high