000131 Search Results

Contextual Info: very low distortion Frequency Mixers LEVEL 17S up +17d B m LO, SCIENTIFIC/ MINI-CIRCUITS to + 1 4 d B m RF 4=1E D • Models ZA0>1WSH ZLW-1WSH AObfifill 000131S 211 « S C C computer-automated performance data typical production unit / for data of other models consult factory

Contextual Info: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic

Contextual Info: FASCO INKS/ SENISYS 40E D B 341=1736 000131b b B S E N I CLED191 Series_ Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100°C

Contextual Info: FASCO INDS/ SENISYS 40E 3> m 34T=i73a 0001316 T El SEN! CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature .to + 100°G

c3781

Abstract: CLED191A CLED191B CLED191C CLT590 L004 2s43
Contextual Info: * FASCO INDS/ SE N I S Y S 34^730 40E D 000131b hr^SENI IEEEQI3B CLED191 Series m -U Gallium Arsenide Infrared Emitting Diodes Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature. -40°C to +100°C

VTB200

Abstract: VT600 VTA200 VTB400 100-C silicon avalanche integrated bridge rectifiers 15 VTA400 VTA600 VTB600 VTC200
Contextual Info: n IC ROSE MI CORP/ M C R O i SbE m bllSIO? 0001317 33N mnm 't-2 3 -0 7 MICR0 QUALITY / IBR 25 S E M IC O N D U C T O R . INC Amp Silicon Avalanche Integrated Rectifiers v t Series 140V, 280V, and 420V RMS Operation 250V, 450V, and 650V Minimum Avalanche Voltages

INTECH A- Amplifier

Abstract: 1850J potentiometer 10k 0085 INTECH VDAC-1850 VDAC-1852 INTECH Advanced Analog VDAC1850N
Contextual Info: INTECH INC/ M I CR OC IR CU ITS öS » i j 4flESD75 0001310 S j-51-09-05 intech » ADVANCED ANALOG VDAC 1850/1852 FEATURES 8-BIT, 80 MHz VIDEO DAC • CMOS CIRCUITRY • UPDATE RATES TO 80MHz • COMPOSITE SYNC and BLANKING OUTPUT SIGNALS • INPUT DATA LATCHES

S125

Abstract: 50pFti VA708
Contextual Info: V T C INC ‘Í'ÍD D I c]3flôIiEi:î 0001312 □ | C 19388929 ,V T C INC' " 99D 01312 _ . T-77-C?7-20 DUAL HIGH-SPEED, FAST-SETTLING, HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER, A C L £ 3 CONNECTION DIAGRAMS SHEETS FEATURES • Fast Settling Time: ±0.1% In 150ns

IC 7476

Abstract: BSTD0313S6 BSTD0313 7476 IC BSTC0326S6 BSTD0366 BSTD0353S6 BSTC0340S6 TW7N BSTC0353S6
Contextual Info: Low power thyristors Type V EUPEC ' tsm 'trm sm drm / i 2dt ' tavm^ c t lE V TO 11 • It 3^D3^‘,7 000131,4 037 " UPEC (di/dt)cr (dv/dt)cr VffT Igt Rthjc W j m ax Outline V rrm V A T 3,5 N 400 600 800 T 5 N 400 600 800 T 7,5 N DIN IEC 747-6 tvj = tvj max

VM0870

Abstract: BM45-12 B3-12 B15-12 DDD1317 VMOB70-2 VCC125
Contextual Info: 0182998 ACRIAN INC DlñSTTñ 000131S Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating JunctionTemperature D T'-SJ-/*- us VMOB70 GENERAL DESCRIPTION

CLED291A

Abstract: CLED291B CLED291C
Contextual Info: 40E 3> FASCO INDS/ SENISYS SMTiTBâ 000131Ö t • I SENI ICEEESai CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. 880 nm wavelength T-13/< package wide radiation angla

C1359

Abstract: MJH16018 K2603 C26CH 340E-01 147J tg-500 175C MUR30100E dl 0165
Contextual Info: MOTOROLA SC DIODES/OPTO O rder this data sheet by M UR301 ODE/D b3b?555 0001311= 2 5SE D MOTOROLA V -Z 3 -0 7 I SEMICONDUCTOR TECHNICAL DATA M UR30100E S w itc h m o d e P o w e r R e c tifie r TM . . . designed for use in switching power supplies, inverters and as freewheeling diodes,

2SC2407

Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­

din 7504

Abstract: DSA117-12 7512-A DSA117-14 35-18A 35-16A II11J ds 35-12 DSAI DSA117-14A
Contextual Info: *+böbESb 00013132 T5S II X Y Rectifier Diodes FAV = 25 - 100 A, Standard Diodes DS. , Avalanche Diodes (DSA.) V Type RRM 'fav p V A kW 25 ? HSM Tc=100°C DSAI 17-18 A ' DSA117-16 A 1800 1600 • DSI 17-16 A • DSA117-14 A • DSI 17-14 A 1600 1400 1400

OPC125

Abstract: OPC200
Contextual Info: OPTEK TECHNOLOGY INC 4flE D • bTTflSflQ 0001311 bS3 ■ OTK -T-Si-fel Optek Standard Phototransistors 0 P C500 L i. .0 2 0 0 .5 1 0PC600 L I -BASE CONTACT A z z .0 2 5 (0 .6 4 ) I , -BASE CONTACT ■f / OPC200 L .0 1 5 (0 .3 8 ) T — EMITTER CONTACT

HQ160

Abstract: PQ160
Contextual Info: TOP VIEW BOTTOM VIEW -D3- 1 h -R H 000131081001020102010201000102 0001310100013101000102321001020100010001310100 0001310100013101000102321001020100010001310100 !"!?!"!?!"!?!"!"!"!" PIN 1 I.D. EE^- 1 E3 E T 0100010201310102013101028801000102013101020131

VY100X

Abstract: VY200X 935F LTR 110 131T VY400X VYA100X VYA200X VYA400X 30-5T
Contextual Info: MICROSEMI CORP/ MICRO m 5bE H tllS^O? 0001311 1D7 •ItlúL ^ 2 3 '0 7 M IC R 1 / IBR Q LUU A L IT V SEM SEMICO IC O N D U C TO R , INC Amp Fast Recovery Time Integrated Rectifiers 25 vy Series 200 Nanosecond Reverse Recovery 100V, 200V, and 400V, VRRM Ratings

2N5301

Contextual Info: 836860 2 SOL ITRON DEV ICES INC t.1 3 DE fl3t.flt.02 0001313 t. | ¡¿¡olitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2N5301 TYPE: NPN E P I BASE CASE: TO-3 • . 40 V Voltage, Collector to Emitter (V cE0 . .

DA0236

Contextual Info: DAICO INDUST RIES INC RF IN/OUT 1 T E QND QND GND ® JJ7 0- DA0236 1 SECTION ATTENUATOR I ® 3i GND — h WÊ " T - l 1“ 11 -O 1 -<T RF IN/OUT <fT - > EbQMTEO 000131b » A — • Built-in C M O S compatible driver 7 ) • Sm all size © © CON TROL GND

Contextual Info: FASCO INDS/ SENISYS 4QE D m 34clci73a 0001310'.$ B S E N I Gallium Arsenide Infrared Emitting Diodes Absolute Maximum Ratings Ta = 25°C unless otherwise stated, Features • • • • • (our power ranges 935 nm wavelength small plastic package 40“ beam angle

Contextual Info: 7294621 POWEREX INC 74 iFJ^ambEl T-°t~zl 0001311 t, Silicon A500 RECTIFIER 3000 Volts 740 Amps Avg. The A500 Series of high power rectifier diodes feature the newly developed, multi-diffused technology in a new General Electric pressure-mounted package. FEATURES:

VTA200 T

Abstract: VTB400 VTA200 VTA400 VTA600 VTB200 VTB600 VTC200 VTC400 VTC600
Contextual Info: P IICRO SEM I CORP/ M ICRO t SbE m k llS I O ? 000131? IBR mnoL 'V23'07 MICRO QUALITY / 33M S E M I C O N D U C T O R . IN C 25 Amp Silicon Avalanche Integrated Rectifiers v t Series 140V, 280V, and 420V RM S Operation 250V, 450V, and 650V Minimum Avalanche Voltages

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

HY53C464LS

Abstract: HY53C464
Contextual Info: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.