0.18 UM CMOS PARAMETERS Search Results

NMOS transistor 0.18 um CMOS

Abstract: 1P3M LOCOS
Contextual Info: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

Contextual Info: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

magnachip 0.18um

Abstract: NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS
Contextual Info: 0.18um 1P4M High Voltage 30V updated in 2005.03.29 Features Voltage Logic(LV,MV ,High Voltage) ƒ 1.8V/5V/30V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV, MV-Device )

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SR0008-03 DATE: Product Affected: 71V416S/L, 71V424S/L, 71V428S/L Manufacturing Location Affected: Date Effective: 11/20/00 Contact:

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

71016s

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:

XC6SLX45t-fgg484

Abstract: XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow
Contextual Info: Device Reliability Report Third Quarter 2010 UG116 v5.11 November 1, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the “Documentation”) to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

Virtex-6 reflow

Abstract: WS609 xc3s3400a xcv400e-b UG116 XCS20XL pqg208 UG-116 XC1702L XCE4VSX25 xc3s500e fg320
Contextual Info: Device Reliability Report First Quarter 2010 UG116 v5.9 May 4, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, p∅ost, or transmit the

74LS107

Contextual Info: 53E J> S A N YO SEMICONDUCTOR CORP O rd e rin g n u m b e r : E N 3 5 9 2 j 7TÌ707ÌJ 0010523 TbO ITSAJ r- H6-or-or MLC74HC107 No.3592 SANYO CMOS High-Speed S tandard Logic j Dual J-K Flip-Flop w ith Reset F e a tu re s • Dual J-K flip-flop/Falling-edge triggered clock input/Active-Low reset input.

XCV100 TQ144

Abstract: XCS20XL pqg208 XC3S700AN FGG484 WS609 x2 type ac capacitor UG-116 xc3s200an pqg208 SPARTAN-3 XC3S400 PQ208 XC3S200 RELIABILITY REPORT UG116
Contextual Info: Device Reliability Report First Quarter 2009 [optional] UG116 v5.5 June 15, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

MC74 motorola

Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
Contextual Info: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

blood pressure circuit schematic

Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
Contextual Info: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:

ttl 74ls109

Abstract: 74LS109
Contextual Info: SANYO SEM ICONDUCTOR CORP S3E ] Ordering number: EN 3897 7 T ì7 0 7 b D D 1G S 3S 7ÔE » T S A J T - HC- 0 7 - 0 7 MLC74HC109 i i SAW O CMOS High-Speed S tandard Logic Dual J-K Flip-Flop w ith Set and Reset F e a tu re s • Dual J-K flip-flop/Falling-edge triggered clock input/Active-Low reset input.

R1LV1616

Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

ECU car

Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
Contextual Info: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

philips tea 1090

Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

pal 012 a

Abstract: PAL 012
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

philips tea 1090

Abstract: mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC
Contextual Info: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips

2JTA

Abstract: DL203 MC74VHC74 MC74VHCXXD MC74VHCXXDT MC74VHCXXM
Contextual Info: [_ M OTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D-Type Flip-Flop with Set and Reset MC74VHC74 The MC74VHC74 is an advanced high speed CMOS D -type flip—flop fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining