ZXMN1 Search Results

Contextual Info: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A

7N10

Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure
Contextual Info: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low

10A8 SOT23-6

Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

ZXMN10A11G

Abstract: ZXMN10A11GTA ZXMN10A11GTC
Contextual Info: ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

DS33570

Abstract: 10b8 SOT23-6
Contextual Info: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 100V Features and Benefits Max ID TA = +25°C (Note 6) 1.9A 1.68A Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Description and Applications This new generation TRENCH MOSFETs from Diodes utilizes a

Contextual Info: ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary RDS on (V) ID (A) 0.125 @ VGS= 10V 6.4 0.150 @ VGS= 6V 5.8 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

Contextual Info: A Product Line of Diodes Incorporated ADV AN CE I N FORM AT I ON ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.1A 100V • Fast switching speed

Contextual Info: A Product Line of Diodes Incorporated Green ZXMN10A25K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 125mΩ @ VGS= 10V TO252 (DPAK) 100V 150mΩ @ VGS= 6V • Max ID TA = +25°C Low On-Resistance Fast Switching Speed

T0-252

Abstract: ZXMN10A09K ZXMN10A09KTC T0252
Contextual Info: ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN D-PAK SUMMARY V BR DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

ZXMN10A25

Contextual Info: ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.125 @ VGS= 10V 4 0.150 @ VGS= 6V 3.7 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast

ZXMN10A08E6

Abstract: 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN10A07F

Abstract: ZXMN10A07FTA ZXMN10A07FTC
Contextual Info: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V : RDS(on)= 0.7 ID= 0.8A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

10A09

Abstract: ZXMN10A09 ZXMN10A09K ZXMN10A09KTC 114L1 4.5V TO 100V INPUT REGULATOR
Contextual Info: A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C • Low input capacitance • Low on-resistance

fs405

Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ; ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

Contextual Info: ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 100 RDS(on) (⍀) ID (A) 0.125 @ VGS= 10V 4 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast

T0-252

Abstract: ZXMN10A09K ZXMN10A09KTC
Contextual Info: ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V BR DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

10A8 SOT23-6

Abstract: 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6
Contextual Info: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

ZXMN10A11GTA

Abstract: ZXMN10A11G ZXMN10A11GTC
Contextual Info: ZXMN10A11G DUAL 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.6⍀ D=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

ZXMN10A07F

Abstract: ZXMN10A07FTA ZXMN10A07FTC
Contextual Info: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 1⍀ D= 0.64A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,

marking code 7N1

Abstract: sot23 7N1 DS33564
Contextual Info: A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features BVDSS RDS ON Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID TA = +25°C (Note 6) 0.76A 0.67A Low On-Resistance

SOT89 MARKING CODE

Contextual Info: A Product Line of Diodes Incorporated ZXMN10A07Z ADVANCE INFORMATION 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID max

ZXMN10A08E6

Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •

Contextual Info: ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN10A07F

Abstract: sot23 7N1 ZXMN10A07FTA ZXMN10A07FTC
Contextual Info: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 1 ID= 0.64A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This