ZTX312 TRANSISTOR Search Results

Contextual Info: SbE » • ^70370 □ G 0 7 0 4 cî 1D1 H Z E T B SEMICONDUCTOR DICE <- m - NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX311 ZTX310 l ON hFE at l OFF Min. Min. Max. Max.

2N2221-2N2222

Contextual Info: S EM IC O N D U C TO R DICE NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX 311 ZTX310 toFF h FE 75 75 75 75 60 60 60 60 60 40 40 40 40 30 20 25 40 40 40 40 40

ZTX313

Abstract: BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310
Contextual Info: NPN Silicon Planar High Speed Switching Transistors DESCRIPTION These are plastic encapsulated transistors specifically designed for high speed sw itching applications and are also useful where very short storage times and low capacitance are required. The E-line package is formed by injection moulding a

2N4400

Abstract: 2N4401 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907A MPS3642
Contextual Info: TABLE 3 : NPN SWITCHING The transistors in this table are characterised for general medium/high speed switching applications and other application areas, e.g. high speed core driving. Max VcE sat at Max Type V CEO V at at Max. Switching Times at Complement

MPS2714

Abstract: 2N4400 2N4401 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907A MPS3642
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR SW ITCH IN G TRANSISTORS The transistors in this table are characterised for general medium/high speed switching applications and they may also be used in other application areas. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,

2N2102

Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed sw itching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

2N2219 transistor

Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
Contextual Info: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary

transistor t2a

Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200

2N2222 MPS2222

Abstract: 2N2222 MPS2222 npn transistor ZTX312 ZTX313
Contextual Info: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE Max 'c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40 600 0.4 150 15 100 300 150 200 20 35 255 150 2N4401

2N2222 hfe

Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
Contextual Info: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87

BFS98

Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

2N2222 MPS2222

Abstract: 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4400 2N4401 2N4402
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P

transistor 2N3905

Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
Contextual Info: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0

BC557P

Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

2N2222 MPS2222

Abstract: 2N3906 NPN switching transistor 2N4403 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Min fT hFE V CEO Max 'c V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 Type at Max. Switching Times at V at at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns BCY59P 45 200 0.35 10 0.25 120 630

BC546P

Abstract: BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453 ZTX551
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO F REQ U EN C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L P U R P O S E

2N2222 MPS2222

Abstract: 2N3906 ZTX313 ZTX510 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
Contextual Info: TABLE 4 : PNP SWITCHING Max V CE satl Min fT hFE V CEO Max 'c V mA M P S2 9 0 7 A 60 600 BCY77P 60 100 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P 2 N 4403 40 600 0 .4 150

BFS98

Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE

bcy78

Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

audio pre-amplifier bc109

Abstract: BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

bcy78

Abstract: BFS98 2N3804 MPS3645 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include: