lN5401
Abstract: 4B20Y 4B10Y 4B40Y 1n4953 ln5400 E100S2 1N1088 PX4A01 1N3231
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 1N5179 1N4512 1N415S 1N4953 BAT18 S218 5 1.0m 10m 100m 100m 100m 100m 10 15 BAQ33 BAQ34 1N458B 1N5194 OR50 BAQ35 BAY135 1N5195 1N519S OR25 ~:s120 20
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1n51791n45121n415s1n4953+15bat1801fso01nso1n40051n4005l1n3251ln54014b20y4b10y4b40yln5400e100s21n1088px4a011n3231
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ZS90
Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
Contextual Info: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250
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2s150zs151zs152zs153+13zs154zs155100maks77bks78bzs90zs92diode zs104zs140ks77d8 d8zs94zs131
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ZS1052-1 TRIGGER COIL
Abstract: ZS1052-1 ZS1052 PERKINELMER FLASH TUBE ZS1092 PerkinElmer ZS1052 Flashlamp flashtubes BGAC BGDC 0011/2511
Contextual Info: PerkinElmer Optoelectronics is fueling the digital revolution with its photo flash technology. From custom design solutions to high volume production, PerkinElmer Optoelectronics consistently delivers high performance, high reliability flash products for the global
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800-775-optodts0904pzs1052-1 trigger coilzs1052-1+8zs1052perkinelmer flash tubezs1092perkinelmer zs1052flashlampflashtubesbgacbgdc 0011/2511
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ZS106
Abstract: zs102 diode ZS102 250mA ZS10B ZS100 ZS101 ZS103 ZS104 ZS108
Contextual Info: GENERAL PURPOSE DIODES TABLE 3 - SILICO N DIFFUSED JUNCTION DIO DES The ZS100 and ZS120 series of diffused junction glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A
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zs100zs120400ma250ma+8zs101zs102zs103zs104zs106zs102 diodezs10bzs108
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ZS150
Abstract: ZS102 C642 diode zs104 ZS100 ZS101 ZS103 ZS104 ZS106 ZS108
Contextual Info: AXIAL DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series of diffused junction D07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A respectively.
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zs100zs120400ma250ma+9zs101zs102zs103zs104zs150c642diode zs104zs106zs108
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diode zs104
Abstract: zs102 diode ZS120
Contextual Info: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to
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g007027zs100zs101zs102+8zs103zs104zs106zs108zs120zs121diode zs104zs102 diode
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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ZS150
Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
Contextual Info: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to
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g007027zs100zs120zs101+9zs102zs103zs104zs106zs150cecc 50001-057bs9300zs151zs122
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2N222A
Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92
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bfs59bfs60bfs61bfs96-98+10bfx84ks77bks78b2n222an2222zs902n222zs1502n36002n222-a
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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ZS106
Abstract: ZS108 zs100 low leakage diodes ZS102 c643
Contextual Info: A X I A L DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series o f diffused junction D 07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 4 0 0 m A and 25 0m A respectively.
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zs100zs120zs101zs121+6zs102zs122zs106zs108low leakage diodesc643
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