ZS90
Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
Contextual Info: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250
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2s150zs151zs152zs153+13zs154zs155100maks77bks78bzs90zs92diode zs104zs140ks77d8 d8zs94zs131
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ZS150
Abstract: ZS102 C642 diode zs104 ZS100 ZS101 ZS103 ZS104 ZS106 ZS108
Contextual Info: AXIAL DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series of diffused junction D07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A respectively.
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zs100zs120400ma250ma+9zs101zs102zs103zs104zs150c642diode zs104zs106zs108
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diode zs104
Abstract: zs102 diode ZS120
Contextual Info: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to
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g007027zs100zs101zs102+8zs103zs104zs106zs108zs120zs121diode zs104zs102 diode
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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hv102
Abstract: 1N5219 HV15F 1jla10 SOT23-6 .S5 1N3225 2SK SOT23 250n 1n3257 HV-30F
Contextual Info: HIGH•SPEED DIODES Item Number Part Number 10 Max VRRM A (Y) t.,. Max (s) VF IF Max @ Test (V) (A) Package Style 5 10 ~~~~~:g: 15 20 HV5-5F ESJASS-06 ESJA25-06 ESJA54-06 ESJA5S-06 HVS-7F ESJASS-OS ESJA25-0S ~~~~~:g: 25 30 35 40 ESJAS2-10 ESJA25-10 ESJA52-10
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1n3215esja17-20esja1s-20esja17-25+16esja1s-25esja1s-301n43921n43911n32231n4390hv1021n5219hv15f1jla10sot23-6 .s51n32252sk sot23250n1n3257hv-30f
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ZS150
Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
Contextual Info: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to
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g007027zs100zs120zs101+9zs102zs103zs104zs106zs150cecc 50001-057bs9300zs151zs122
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diode bs 9300
Abstract: ZS150 Fast Recovery Diode 50V 3A Diode c642 low leakage diodes low leakage fast epitaxial diode ZS151 C643 ZS152 ZS153
Contextual Info: LOW LEAKAGE DIODES T A B L E 4 - S IL IC O N P L A N A R E P IT A X IA L LOW L E A K A G E D IO D E S The ZS150 series of glass encapsulated diodes have been designed for applications which demand a very low leakage current, a high degree of reliability and fast recovery characteristics.The ZS150 and ZS151
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zs150zs151zs152zs154+8zs153zs155diode bs 9300fast recovery diode 50v 3adiode c642low leakage diodeslow leakage fast epitaxial diodec643
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2N222A
Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92
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bfs59bfs60bfs61bfs96-98+10bfx84ks77bks78b2n222an2222zs902n222zs1502n36002n222-a
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Diode c642
Abstract: ZDX4F 595D ZS150
Contextual Info: TS PLESSEY SENICOND/DISCRETE DE | 7250533 ODOSOES 5 7220533 P L ESSEY S E M I C O N D /DIS C R E T E 95D LOW 05025 D l e a k /TgeI dhddes TABLE 4 - SILICON PLANAR EPITAXIAL LOW LEAKAGE DIODES The ZS150 series of glass encapsulated diodes have been designed for applications which demand a very
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zs150zs151bs9300zs152+3diode c642zdx4f595d
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ZS106
Abstract: ZS108 zs100 low leakage diodes ZS102 c643
Contextual Info: A X I A L DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series o f diffused junction D 07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 4 0 0 m A and 25 0m A respectively.
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zs100zs120zs101zs121+6zs102zs122zs106zs108low leakage diodesc643
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