ZO 410 NF Search Results

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

sky65116

Abstract: NMT450 uhf linear amplifier module TW14-D621 TAJA106M GSM450 GSM480 TAJA106M006R NMT-450 t 430 nf 65 nf 06
Contextual Info: data sheet SKY65116: 390–500 MHz Linear Power Amplifier Features W  ideband frequency operation: 390–500 MHz High linearity: OIP3 43 dBm l High efficiency: 40% PAE l High gain: 35 dB l P 1 dB = 32.5 dBm l Single DC supply: 3.6 V l Internal RF match and bias circuits

Contextual Info: DATA SHEET SKY65116: 390–500 MHz Linear Power Amplifier Features ฀฀Wideband฀frequency฀operation:฀390–500฀MHz ฀High฀linearity:฀OIP3฀43฀dBm l฀High฀efficiency:฀40%฀PAE l฀High฀gain:฀35฀dB l฀P 1฀dB฀=฀32.5฀dBm

BGA420

Abstract: EHA07385
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

63 1826 0306

Abstract: zo 103 ma 2SC5702 DSA003640
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

R07DS0095EJ0800

Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

RQA0011

Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

BGA 420

Abstract: 37265
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

63 1826 0306

Abstract: Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

1128 marking

Abstract: 63 1826 0306 zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

BGA420

Abstract: E6327
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD

Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 10/2003 Gallium Arsenide CATV Amplifier Module MHW8188A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection

Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2004 Gallium Arsenide CATV Amplifier Module MHW8207A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection

Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 12/2003 Gallium Arsenide CATV Amplifier Module MHW8227A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection

Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2004 Gallium Arsenide CATV Amplifier Module MHW8267A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection

20-PIN

Abstract: ICS853013 MC100EL13 MC100LVEL13 MS-013
Contextual Info: ICS853013 Integrated Circuit Systems, Inc. LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO2.5V/3.3V/5V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853013 is a low skew, high performance dual 1-to-3 Differential-to-2.5V/3.3V/5V LVPECL/ HiPerClockS

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9187 Features • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability GaAs FET Transistor Technology

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9267 Features • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection

ICS853013

Abstract: MC100EL13 MC100LVEL13 MS-013 20-PIN
Contextual Info: ICS853013 Integrated Circuit Systems, Inc. LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO2.5V/3.3V/5V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853013 is a low skew, high performance dual 1-to-3 Differential-to-2.5V/3.3V/5V HiPerClockS LVPECL/ECL Fanout Buffer and a member of