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    RQA0011 Datasheets (2)

    Renesas Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RQA0011DNS
    		Renesas Technology Silicon N-Channel MOS FET Original PDF 193.85KB 18
    RQA0011DNSTB-E
    		Renesas Technology Silicon N-Channel MOS FET Original PDF 193.85KB 18

    RQA0011 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RQA0011

    Abstract: RQA0011DNS Ga FET marking k
    Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		rqa0011dnswson0504-2r07ds0095ej0600pwsn0002za-b+2rqa0011ga fet marking k PDF

    RQA0011DNS

    Abstract: RQA0011DNSTB-E c10 capacitor
    Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0500 Rev.5.00 Sep 08, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		rqa0011dnsr07ds0095ej0500wson0504-2pwsn0002za-b+3rqa0011rqa0011dnstb-ec10 capacitor PDF

    marking 951

    Abstract: RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623
    Contextual Info: RQA0011DNS Silicon N-Channel MOS FET REJ03G1600-0100 Rev.1.00 Nov 08, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		rqa0011dnsrej03g1600-0100wson0504-2pwsn0002za-b+4rqa0011marking 951rqa0011dnstb-ezo 103 ma 75 623 PDF

    RQA0011

    Abstract: RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 WSON0504-2
    Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0200 Rev.2.00 Aug 27, 2010 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		rqa0011dnsr07ds0095ej0200wson0504-2pwsn0002za-b+3rqa0011rqa0011dnstb-ezo 103 ma 75 623 PDF

    RQA0011

    Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
    Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		rqa0011dnswson0504-2r07ds0095ej0800pwsn0002za-b+4rqa0011rqa0004pg890rqa0011dnstb-e PDF

    R07DS0095EJ0800

    Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		rqa0011dnsr07ds0095ej0800wson0504-2pwsn0002za-b+1rqa0011 PDF

    RQA0011

    Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0400 Rev.4.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		rqa0011dnswson0504-2r07ds0095ej0400pwsn0002za-b+1rqa0011 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		r07cs0003ej0100rjp63k2rjp63f3rjp30e2+7rjp30h2rjj0319dsprjp63frjp30h3rjj0319bcr1am-12a equivalentrjj0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		r07cs0003ej0200rjj0319dspbcr8pm equivalentrjp30h2+7n0201rjj0319np109n055pujrjk5020rjp30e2dppnp75n04yuglg washing machine circuit diagram PDF