RQA0004 Search Results

RQA0004PXTL-E

Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

RQA0004PXTL-E

Abstract: 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012
Contextual Info: RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features • High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

RQA0004PXTL-E

Abstract: RQA0004PXDQS
Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

RQA0004PXDQS

Abstract: RQA0004PXTL-E RQA0004 k 1487 db30a
Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Sep 09, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

Contextual Info: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)  Compact package capable of surface mounting

RQA0004LXAQS

Contextual Info: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz  Compact package capable of surface mounting

k 1487

Abstract: RQA0004 RQA0004PXTL-E RQA0004PX R07DS0418EJ0201
Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0201 Rev.2.01 Jun 27, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

RQA0004LXTL-E

Abstract: 155-8-1 905-170 RQA0004LXAQS
Contextual Info: RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

RQA0011

Abstract: RQA0011DNS Ga FET marking k
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

RQA0011

Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

RQA0004LXAQS

Abstract: RQA0004LXTL-E ka 494
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RQA0004PXDQS

Abstract: RQA0004PXTL-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid