ZO 410 MF Search Results

R07DS0095EJ0800

Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

RQA0011

Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

MF Electronics crystal oscillator 08111

Abstract: M1710 M27DO W2600 M2800-M284 Ali M1644 H1745 H2645 M5516 M1910
Contextual Info: mp D.I.L. FULL SIZE 4b E Ml 600, M2600, Ml 700, M2700, Ml 644, M2644, M1744, M2744, Ml 610, M2610, Ml 710, M2710, Ml 636, M2636, Ml 736, M2736, D • SbMRSDl Ml 645 M2645 M1 745 M2745 D D D D 2‘17 T ■ MFE Ml 800, M1810, M1836, Ml 844, Ml 845 M2800, M2810, M2836, M2844, M2845

A1300 transistor

Contextual Info: NBSG16 2.5 V/3.3 V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the

Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

NBSG16MNR2

Abstract: PEAK TRAY QFN 4x4 485G NBSG16 QFN-16 fcBGA PACKAGE thermal resistance
Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

lga-16 4x4

Abstract: 485G NBSG16 QFN-16 BGA16 LGA16 footprint
Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

Transistor motorola 513

Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Contextual Info: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed

485G

Abstract: NBSG16
Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

A1300 transistor

Abstract: transistor A1300
Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com Description The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower

63 1826 0306

Abstract: zo 103 ma 2SC5702 DSA003640
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

5.1 ch amplifier circuit diagram

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG2001R2 Features • • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection

63 1826 0306

Abstract: Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

1128 marking

Abstract: 63 1826 0306 zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

6904 mitsubishi

Abstract: 2SC5702
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TP5002

Abstract: TP5002S TPS002 TP500 1N4148 BD136
Contextual Info: MOT OROL A SC XSTRS/R F 4bE b3b7ES4 D 001524*1 3 «nO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5002' TP5002S The RF Line UHF Linear Power Transistors 1.5 W — 3 8 0 t o 5 1 2 M H z U H F LIN E A R P O W E R T R A N S IS T O R S N P N S IU C O N The TP5002/S are NPN gold metallized transistors using diffused ballast resistors for

pth resistors datasheet

Abstract: ST014 SMA Connector Spice 11A72 tl 555 c TRANSISTOR BTL POWER AMPLIFIER AN-738 C1995 DS3883 ST05
Contextual Info: National Semiconductor Application Note 738 Stephen Kempainen January 1991 The Futurebus a backplane is a complex electrical environment that consists of many circuit elements The modeling of such an environment can become time consuming and expensive The Futurebus a Electrical Task Group Expert

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec 1251

Abstract: 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

485G

Abstract: AND8020 NBLVEP16VR NBLVEP16VRMN NBLVEP16VRMNR2 NBWLVEP16VR
Contextual Info: NBLVEP16VR 2.5V/3.3V/5V ECL Differential Receiver/Driver with Oscillator Gain Stage and Enabled High Gain Outputs The NBLVEP16VR is an ECL/LVPECL oscillator gain stage with high−gain output buffers, selectable output enable and a feedback buffer. The NBLVEP16VR is a solution for crystal oscillators and

100EL15

Abstract: transistor el15 MC100EL15 MC10EL15 el15 transistor
Contextual Info: MC10EL15, MC100EL15 5V ECL 1:4 Clock Distribution Chip The MC10EL/100EL15 is a low skew 1:4 clock distribution chip designed explicitly for low skew clock distribution applications. The VBB pin, an internally generated voltage supply, is available to this device

Contextual Info: MC10EL15, MC100EL15 5V ECL 1:4 Clock Distribution Chip The MC10EL/100EL15 is a low skew 1:4 clock distribution chip designed explicitly for low skew clock distribution applications. The VBB pin, an internally generated voltage supply, is available to this device