ZDIODE Search Results

SM 74hc04

Abstract: sw dip-8 16DIP300 74HC00 TANT01 74HC04 10HEADER 74HC157 74HC244 IN4148
Contextual Info: A B C D DB25 P4 GND +3.3V S3 RESET SWSPDT 500 R4 P1 P2 1 1 INT* VDD 5 8 D04 D2 5 4 2 1 + 1 1 0.1uF C13 U2B 74HC00 E2 9 10 JUMPER E1 JUMPER 6 3 U2C 74HC00 U2A 74HC00 R12 22K SM/R_0805 D04 D3 C2 10uF 4.3V ZDIODE D1 VDD3 R13 22K SM/R_0805 C1 100uF TANT01 + D04

T7100

Abstract: C157 TANT01 ICT R7 HCT244 P300 XRT71D00 XRT7300 P30012 BG1A
Contextual Info: A B C D +3.3V GND +5V DB25 P8 P3 P1 P2 1 1 1 1 14 2 15 3 16 4 17 5 18 6 19 7 20 8 21 9 22 10 23 11 24 12 25 13 + 500 R11 R7 + X6 X5 X4 5 5 0.1uF C13 3.9V ZDIODE D5 0.1uF C7 0.1uF C2 0.1uF C3 VDD HOST MODE RESET SWITCH RESET SWSPDT R14 22K SMDRC VDD 5 4 2 3

16DIP300

Abstract: 74HC00 74HC04 dmo3 10HEADER dmo2 TANT01 74HC157 74HC244 IN4148
Contextual Info: A B C GND P1 P2 TP29 GND +3.3V RESET SWSPDT S4 1 14 2 15 3 16 4 17 5 18 6 19 7 20 8 21 9 22 10 23 11 24 12 25 13 1 1 TP1 GND + C1 100uF TANT01 TP30 GND HOST MODE RESET SWITCH 27 26 DB25 P3 PARALLEL PORT IN4148 VDD3 5 4.3V ZDIODE 8 D04 D14 + C2 10uF 6 3 U4C

fdbs09h04

Abstract: FDBS09H04A FDPS09H04 FDBS09H04A_F085A
Contextual Info: FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Features Description • Short circuit protection with latch N channel power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart Trench chip on chip technology. Provides

PG-TO218-5-146

Abstract: diode zd 22 BTS550P-E3146 ZD 6v8 PG-TO218-5
Contextual Info: PROFET Data Sheet BTS550 Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of

Contextual Info: VEMI85AB-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100  • Typical cut off frequency f3dB = 130 MHz

Contextual Info: Temic U4793B Se m i co n ü u c tors Overload Monitoring with Resistive Load, Vx = 44.5 mV Description The bipolar IC U4793B is designed to monitor overload or a short circuit in automotive or industrial applications. The threshold is tied to V 4 5 = Vs - V-p where

BB205

Contextual Info: VISHAY Vishay Telefunken Voltage Regulator Diodes and Z-diodes A voltage regulator diode is a diode which develops an essentially constant voltage across its terminals throughout a specified current range. Special reverse-biased diodes known as Z-diodes and

Contextual Info: BZM55C. v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • • Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C./TZMC. Very sharp reverse characteristic

U4311B-C

Abstract: rc car receiver remote control rc car circuit diagram
Contextual Info: T e m ic U4311B Se m i co n ü u c tors Low-Current Superhet Remote Control Receiver Description The U 431IB is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super­ heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car

Contextual Info: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization

TOKO CERAMIC FILTER 455

Abstract: TDA1083 vogt l9 vogt u8 154AN CY2-22124-RT02 AM-receiver circuit vogt l6 TOKO CERAMIC FILTER vogt
Contextual Info: TDA1083 One Chip AM/FM Radio with Audio Power Amplifier Description The integrated circuit TDA1083 includes, with exception of the FM front end, a complete AM-/FM-radio-circuit with audio power amplifier. An internal Z-diode stabilizes the supply voltage at VS [ 13 V, which allows

ic 4072

Abstract: ic 4072 pin diagram 8 PIN 4072 4072B 4072bt R 937 4072
Contextual Info: Tem ic U 4072 B TELEFUNKEN Semiconductors T\vo-Tone Ringer for Telephone Sets Description The two-tone ringing circuit in conjunction with a piezo transducer replaces the norm al electrom echanical telephone bell. It is operated with the ringing current from the exchange. However, there

1240 ringer

Contextual Info: Temic U3760MB Semiconductors Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.

Ip200mA

Abstract: 600L100
Contextual Info: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1

Contextual Info: TeMIC BZW03C. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits

4728a

Abstract: 4747a IN 4732A N4742A 4738a 4734A 4735A 4742A 1N47 4733A
Contextual Info: Tem ic 1N4728A.1N4761 A TELEFUN KEN Sem iconductors Silicon Power Z-Diodes Features • Very sharp reverse characteristic • Very high stab ility • L o w reverse current lev el • V /-to le r a n c e ± 5% Applications 44 V oltage stab ilization Absolute Maximum Ratings

Contextual Info: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%

Contextual Info: Tem ic S e m i c o n d u c t o r s List of Symbols A Anode Irrm a Distance in mm I rsm Repetitive peak reverse current Non-repetitive peak reverse current Irw m bpn Normalized power factor Crest working reverse current C Capacitance, general Is Supply current

Contextual Info: Tem ic TZMC. S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization

Contextual Info: TEMIC BZW03D. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • G lass passivated junction • H erm etically sealed package • C lam ping sealed package Applications Voltage regulators and transient suppression circuits

Contextual Info: Tem ic TZM5221B.TZM5267B S e m i c o n d u c t o r s Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221B.1N5267B • Low reverse current level • V /-tolerance ± 5% with the devices

Contextual Info: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings

FZIT

Contextual Info: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization