ZC80 Search Results

Contextual Info: H S I ELECTRONICS INC 3SE D ES 5b5b4bb 0DD03S4 b E3MSI ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES elG ctron lcs m e The abrupt ZC700 and hyperabrupt ZC800 series tuning diodes together offer a selection of characteristics that could fit many U H F /V H F applications. Where required the higher

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 .564 SOT23
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SER IES FOR PCB MOUNTING. C H A R A C T E R IS T IC S at 2 5 °C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q

Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES SERIES ZC700 - ZC714, B, C, ZC800 - ZC899, A, B. _ : i The abrupt ZC700 and hyperabrupt ZC800 series tuning diodes together offer a selection of characteristics that could fit many U H F/V H F applications. Where required the higher

ZC800

Abstract: ZC700 ZC898 ZC899 ZC800-ZC899
Contextual Info: M S I ELECTRONICS INC ES 3SE D SbSb4bb 00D03Û4 b E3MSI ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES e l o c t r o n O c B /ne S E R IE S ZC700-ZC714, B, C, ZC800-ZC899, A, B. The a b ru p t Z C 7 0 0 and h y p e ra b ru p t Z C 8 0 0 series tu n in g diod es to g e th e r o ffe r a selection

diode S3V 68

Abstract: DIODE S3V 75 DIODE S3V DIODE S3V 66 DIODE S3V 50 DIODE S3V 08 DIODE S3V 40 S3V 68 S3V 84 S3V Diode
Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES R Æ 1 S electronics m e. SERIES ZC700 - ZC714, B, C, ZC800 - ZC899, A, B. The abrupt ZC 700 and hyperabrupt ZC800 series tun ing diodes together o ffe r a selection o f characteristics th a t could f it many U H F /V H F applications. Where required the higher

899Z

Contextual Info: M SÖ ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES e l t t c t r o n l c s me SE R IE S ZC700 - ZC714, B, C, ZC800 - ZC899, A, B. The abrupt Z C 70 0 and hyperabrupt Z C 8 0 0 series tuning diodes together offer a selection of characteristics that could fit many U H F / V H F applications. Where required the higher

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

SPARK

Abstract: 4320 C80AL C80A dc spark-over voltage
Contextual Info: zC80A, C80AL Series Nominal Nominal impulse impulse discharge discharge current current 8/20 μ s 10/1000μ μs idi idi KA (A) Nominal Alternating discharge current at 50Hz, 1s ida (A) Nominal dc spark-over voltage Gas Discharge Tube dc spark-over voltage

Tda 9032

Abstract: ZC90 tda 800 national DP83932 DP83932EB-EISA zc80 ZC83 BCPR Sonic DP83932 TDA 8090
Contextual Info: INTRODUCTION The purpose of this application note is to describe the implementation of an EISA bus master Ethernet interface solution using National Semiconductor’s DP83932 System Oriented Network Interface Controller SONICTM and PLX Technology’s EISA9032 EISA Bus Master Interface chip

ZC800

Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES SERIES ZC 700 * ZC 714, B, C, ZC 800 - ZC 899, A , 8 . The abrupt ZC 700 and hyperabrupt ZC 800 series tuning diodes together offer a selection of characteristics that could fit many U H F /V H F applications. Where required the higher

ZC800

Abstract: HYPERABRUPT ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821
Contextual Info: HYPER ABRUPT VARIABLE CAPACITANCE TUNER DIODES S IL IC O N IO N IM P L A N T E D H Y P E R A B R U P T T U N E R D IO D E S Designed for use in HF, V H F, U H F electronic tuning applications where large capacitance variations and high Q are required. Tamb = 25*C

SQ210

Abstract: MV2112 EP1014 MV2209 SQ212 sq201 MV2201 MV2107 1N4815 ha1915
Contextual Info: T A B L E OF C O NTENTS GLASS PACKAGED HERM ETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance Page No. -5 7 7 7 10 6 6 6 6 ABRUPT 1N951 1N9S6 . 1N4786 1N4815A. B . . . 1N5139 1N51485A, B .

zc44

Abstract: PC28F128P33 HX1188NL rotary encoder sharp 73 nand02 TSOP48 TQFP100 zc42 ZC41 sandisk micro sd card pin configuration HX1188
Contextual Info: ADSP-BF548 EZ-KIT Lite Evaluation System Manual Revision 1.1, September 2007 Part Number 82-000206-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2007 Analog Devices, Inc., ALL RIGHTS RESERVED. This document

Contextual Info: M S I ELECTRONICS INC IDE I | St,5L4bb 00D03ST 7 | G&1SD ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES electronics m e The abrupt ZC700 and hyperabrupt ZC 800 series tuning diodes together offer a selection o f characteristics that could fit many U H F /V H F applications. Where required the higher

Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES electronics m e. The abrupt Z C 7 0 0 and hyperabrupt Z C 8 0 0 series tuning diodes together offer a selection of characteristics that could fit many U H F / V H F applications. Where required the higher Q 's of the Z C 7 0 0 's can be traded for the larger capacitance tuning ratios of the Z C 80 0's.

marking NB D9 sot-23

Abstract: ZC821 ZC825 SOT23 ZC825 SOT-23 ZC800 ZC801 ZC802 ZC803 ZC820 ZC822
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICON ION IMPLANTED HYPERABRUPT TUNER DIODES Designed for use in HF, VHF and UHF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a semiconductor doping technique enabling close control of doping and profile. Its

zd801

Abstract: zd150 ZC8240 ZC8650
Contextual Info: Broadband Voltage Controlled Oscillators 2 to 18GHz The content of this specification may change without notification 10/01/09 Oscillators Plug- in Broadband Voltage Freq. Range P/ Controlled Tuning Power Phase Noise Voltage Supply @100KHz GHz (V) ZD2040

ZC821

Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its

5006

Abstract: ZC88 zd801 mvco zc8900 ZC865 ZC8650 ZC86
Contextual Info: Oscillators Product Catalog The content of this specification may change without notification 10/01/09 Oscillators Surface Mount MVCO - 01 Voltage Controlled Oscillators Freq.Range Tu n i n g Vo l t a g e 140 to 2600MHz MHz (dBm) (V) Harmonic Suppression

Contextual Info: Commercial Narrowband Voltage Controlled Oscillators The content of this specification may change without notification 10/01/09 Oscillators Commercial Freq. Range P/N Plug- in Narrowband Voltage Controlled Power Power Output Operating Storage Output Flatness @25 OC