ZC 2800 Search Results

FMMV105G

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

MARKING YA SOT-23

Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
Contextual Info: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim

colour code diode zener

Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
Contextual Info: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

FMMD6050

Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
Contextual Info: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid

BAV99 Zener diode

Abstract: Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74
Contextual Info: FERRANTI semiconductors BAV99 Hi gh Speed S w i t c h i n g Series D io de Pair DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

C6V2 ST

Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
Contextual Info: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

5D marking DIODE BAS16

Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
Contextual Info: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

zener diode marking E7

Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74

Diode Marking z3 SOT-23

Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
Contextual Info: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

SOT-23 LOA

Abstract: ZC2800 ZC2811 ZC2800E ZC2810 ZC5800 ZCI2811 LOA SOT23 ferranti
Contextual Info: FERRANTI semiconductors ZC2800 ZC2810 ZC2811 ZC5800 S c h o ttk y Barrier D iodes NOT TO SCALE FEATURES • Available in three packages: Economical Plastic E-line M icro m in iatu re SOT-23 High R eliability Glass DO-35 • Low Leakage Current • Low Forward Voltage

FMMD6050

Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
Contextual Info: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

AMZ8000

Abstract: DF000380 AmZ8001/AmZ8002
Contextual Info: Am8127 Am8127 Am Z8000 C lo c k G e n e ra to r DISTINCTIVE CHARACTERISTICS High-drlve high-level clock output Special output provides clock signal matched to re­ quirements of AmZ8000* CPU 4MHz and some 6MHz applications , M MU and DMA devices. Synchronized WAIT state and time-out controls

Semicon volume 1

Abstract: HVC-50F s5a1 LTA 902 sx
Contextual Info: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage

S3A1

Abstract: 1N3492
Contextual Info: SEMICONDUCTOR PRODUCTS CATALOG SWEETWATER AVENUE • P. O. BOX 328 • BEDFORD • MASSACHUSETTS • AREA CODE 617 275-8542 T o v i i i h a n d C o m liC io n ^ o f B a le T e rm s o f P a y m e n t Domestic — net 30 days if credit has been arranged. Where credit is not established, payment must be re­

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21360-4E ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.0 GHz Prescaler MB15E05SL • DESCRIPTION The Fujitsu MB15E05SL is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.0 GHz prescaler.

FPT-16P-M05

Abstract: MB15E05 MB15E05L MB15E05SL MB15E05SLPFV1 MB15E05SLPV1 SSOP-16
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21360-4E ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.0 GHz Prescaler MB15E05SL • DESCRIPTION The Fujitsu MB15E05SL is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.0 GHz prescaler.

4046 application note pll

Abstract: 4046 frequency synthesizer application notes 4046 application note pll 4046 10,6 MHz tcxo application note pll 4046 PLL WITH VCO 4046 FPT-16P-M05 MB15E07 MB15E07L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21358-3E ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.5 GHz Prescaler MB15E07SL • DESCRIPTION The Fujitsu MB15E07SL is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.5 GHz prescaler.

4046 SSOP

Abstract: 4046 vco LCC-16P-M03 MB15E07 MB15E07L MB15E07SL MB15E07SLPFV1 MB15E07SLPV SSOP-16 FPT-16P-M05
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21358-2E ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.5 GHz Prescaler MB15E07SL n DESCRIPTION The Fujitsu MB15E07SL is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.5 GHz prescaler.

4046 application note pll

Abstract: 4046 frequency synthesizer application notes prescaler 64 application note pll 4046 PLL WITH VCO 4046 DCS1800 FPT-16P-M05 ISM2400 ISM900 MB15E07
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.5 GHz Prescaler MB15E07SL • DESCRIPTION The Fujitsu MB15E07SL is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.5GHz prescaler. The prescaler has a selectable dual modulus division ratio of 32/33 or 64/65 enabling pulse swallow operation.

FPT-16P-M05

Abstract: MB15E07 MB15E07L MB15E07SL MB15E07SLPFV1 MB15E07SLPV1 SSOP-16
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-21358-4Ea ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.5 GHz Prescaler MB15E07SL • DESCRIPTION The Fujitsu MICROELECTRONICS MB15E07SL is a serial input Phase Locked Loop PLL frequency synthesizer

DS04-21358-3E

Abstract: 4046 vco PLL WITH VCO 4046 FPT-16P-M05 MB15E07 MB15E07L MB15E07SL MB15E07SLPFV1 MB15E07SLPV1 SSOP-16
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-21358-3E ASSP Single Serial Input PLL Frequency Synthesizer On-chip 2.5 GHz Prescaler MB15E07SL • DESCRIPTION The Fujitsu MB15E07SL is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.5 GHz prescaler.