Z77777 Search Results

Contextual Info: TC74HCT646AP <7 TC74HCT648AP O C T A L B U S T R A N S C E IV E R / R E G IS T E R TC74HCT646AP N O N - IN V E R T IN G TC74HCT648AP I N V E R T I N G _ The T C 7 4 H C T 6 4 6 A /H C T 6 4 8 A O CTAL BUS a re high speed T R A N S C E IV E R / R E G IS T E R S

JIS D 5500

Abstract: ip5216 IS-287J kojiri JASO 7002 JIS D 0203 portland cement
Contextual Info: Product Specification 108-5216-2 M ; m I oo .070 Multi-Lock I/O Connector MLC for Wire-to-Board Termination 1. Scope: o This specification provides performance requirements and test methods for .070 Series AMP Multi-Lock I/O Connector (MLC) for wire-to-board termination, of the part numbers specified in Para.2

tney2

Abstract: HM5241 5241605
Contextual Info: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M -W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-42S4LFG64S 3.3 V OPERATION 4M-W ORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S4LFG64S is a 4,194,304 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 4

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-42S8LFG64S 3.3 V OPERATION 8M-W ORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S8LFG64S is a 8,388,608 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 8

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-428LFH641 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-428LFH641 is a 8,388,608 words by 64 bits dynamic RAM module on which 8 pieces of 64M DRAM :

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which

Contextual Info: ADVANCE MT58LC128K32/36E1 128K X 32/36 SYNCBURST SRAM M IC R O N 128K X32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View F ast access tim es: 8.5, 9 ,1 0 ,1 1 an d 12ns

R7F7

Contextual Info: Preliminary H M 5216165 S e r ie s 524,2SS-word x 16-blt x 2-bank Syn ch ro n o u s D ynam ic R A M HITACHI All inpuls and outputs are referred to the rising e d g e o f th e c lo c k in p u t. T h e H M 5 2 1 6 1 6 5 is offered in 2 banks for improved performance.

Y112

Abstract: SOP32 525mil t18i kiv 07 na572
Contextual Info: >¿3C3- KNo. N *5721 Em m x = *- z 1M 1 3 1 0 7 2 7 - K x 8 l i M - 7 5 ï / î / a > t y s // <.#%&* -IIIk |l!’ s|f 1310727- H X ê fc 'v h W 3.3VIH —"ÄÌR Jftil ? iz ¿ J g . # 3 .3 V itl- S j» (r «t Æ >U — F/v ï h m W * r í6 T ? * 5 . //

Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 (7 LINE) FAX:(07) 8215815 FOR MESSRS :_ _ _ DATE : May. 13.2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS SP14Q005-ZZA

IR receiver TK 19 527

Abstract: TLD 721 5FW-4 Fm 6721 transformer
Contextual Info: DP8344B National ÆLm Semiconductor DP8344B Biphase Communications Processor— BCP G eneral Description although a TTL-level serial input is also provided for applica­ tions where an external comparator is preferred. The DP8344B BCP is a communications processor de­

Nippon capacitors

Contextual Info: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20, 1997 Description The HB526A264DB is a lM x 64 x 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O .D IM M ), mounted 8 pieces of 16-Mbit SD RAM (HM5216805TT/HM5216805LTT) sealed in

mb86901

Contextual Info: F U J IT S U High Performance 32-Bit RISC Processor SPARC FEATURES • Architecture supports scalability towards faster technologies • Address presentation which supports highperformance cache • 15 times V A X ™ 11/780 equivalent MIPS typical performance

Contextual Info: HM5216326 Series 262,144-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-678 Z Preliminary Rev. 0.1 Jun. 9, 1997 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided

Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

Contextual Info: SN74ACT3638 512 x 32 x 2 C L O C K E D B I D I R E C T I O N A L FI RST-I N, F I R S T - O U T M E M O R Y S C A S 228C -JU N E 1 9 9 2 - REVISED SEPTEMBER 1995 F r e e - R u n n i n g C L K A and C L K B Can Be IRA, O R A , AEA , and A F A Flags A s y n c h r o n o u s or C o i n c i d e n t

21040-07

Abstract: 21040-AC Scans-0025707
Contextual Info: in t e l. 21040 4M 4,194,304 x 1 BIT DYNAMfC RAM WITH FAST PAGE MODE • Performance Range Symbol Parameters tRAC Access Time from RAS *CAC *RC 21040-07 21040-08 70 80 Access Time from CAâ 20 25 ns Read Cycle Time 130 150 ns . ■ Fast Page Mode Operation

6264c

Abstract: Le89
Contextual Info: MOSEL _ MS6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The M O SEL M S6264C is a high performance, low power CM O S static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an

VT2130-12PC

Abstract: VT2130-10CC VT2130-15
Contextual Info: VT2130 • VT2131 p r e l im in a r y 1,024 x 8 DUAL PORT RANDOM ACCESS MEMORY FEATURES DESCRIPTION • 100 ns address access time The VT2130 and VT2131 are 8,192-bit Dual Port Static Random Access Mem­ ories organized 1,024 words by eight bits. They are designed using fully

Contextual Info: HM5216326 Serie 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz HITACHI ADE-203-678B (Z) Preliminary, Rev. 0.3 Jan. 14,1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2