Z6 DIODE Search Results

Z6 DIODE

Abstract: DIODE Z6 marking Z6 ksd2047 marking Z6 SOT
Contextual Info: SDZ7V5F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ7V5F Marking Package Code Z6 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC

Z6 DIODE

Abstract: DIODE Z6 marking Z6 zener Z6 SOT23 SOT-23 marking 717
Contextual Info: SDZ7V5 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ7V5 Marking Package Code Z6 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1

IN4549

Abstract: 9305-F-081 in3340 IN3305 IN3350 Z6 82 Z6B10 Z6B11 Z6b8 Z6B13
Contextual Info: Z6 Series 75W Voltage Regulator Diodes A range of high power zener and avalanche diodes available to BS 9305-F-081 in a hermetically sealed D05 package in both unipolar and bipolar configurations. P ,xco„1 - 7 5 W

Z6 DIODE

Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
Contextual Info: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr

diode ECG125

Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Contextual Info: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time

Philips ECG125

Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
Contextual Info: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr

transformer 3A 6.3V filament

Abstract: 269EX 269AX TRANSFORMER CT 2A CTX13 6.8z LR3902 TRANSFORMER CT 350 mA 5v 2a transformer 263AX
Contextual Info: Plate & Filament "CLASSIC" ENCLOSED PLATE & FILAMENT POWER TRANSFORMERS • Most primaries 115 VAC, 60 Hz. except as noted in table • H.V. DC current, measured with cap. input filter (full wave - 2 diode, C.T. rectifier circuit). • Enclosed, 4 hole chassis mount (3 designs use "Z" mount)

Z1015

Abstract: Z1047 Z1033 Z1082 Z2012U 100PF Z1018 Z1022 Z1027 Z1039
Contextual Info: Stand-off voltage Repetitive surge capability TRANZAP’s are silicon PN junction diodes designed, manufactured and specified as Transient Voltage Suppressors having a non-linear current-voltage characteristic which sustains an almost constant voltage over a wide range of

Contextual Info: Plate & Filament "CLASSIC" ENCLOSED PLATE & FILAMENT POWER TRANSFORMERS • Most primaries 115 VAC, 60 Hz. except as noted in table • H.V. DC current, measured with cap. input filter (full wave - 2 diode, C.T. rectifier circuit). • Enclosed, 4 hole chassis mount (3 designs use "Z" mount)

ECG584 schottky

Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Contextual Info: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

fs100r12ke3_b3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R12KE3_B3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! $ $ / $ # / 7 ! 8 # ! = # + > = $ "# # $ 8

c3v9

Abstract: c9v1 c5v6 BZV49 93 SOT89 c24 Zener c22 zener C8V2 c4v7 x5 sot89
Contextual Info: BZV49 SERIES ISSUE 4 - AUGUST 1996 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Zener Voltage VZ at IZ=2mA Type VOLTS BZV49: Nom. BZV49 SERIES SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES Differential Resistance rZ at IZ=2mA Ω Temperature Coefficient SZ at IZ=2mA

FS100R12KE3_B3

Abstract: FS100R12KE3
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R12KE3_B3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! $ $ / $ # / 7 ! 8 # ! = # + > = $ "# # $ 8

FS100R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R12KE3_B3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! $ $ / $ # / 7 ! 8 # ! = # + > = $ "# # $ 8

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

Contextual Info: 8 3 6 8 6 0 2 SOL ITR O N D E V I C E S TS INC D É TJ fl3fc.flL,02 95D 02920 DOOSTED Devices. Inc. D T z-6 5-'Z'l MEDIUM VOLTAGE, FAST RECO VERY PN EPITAXIAL FAST R ECO VER Y PLANAR POW ER DIODE CHIP N UM BER CONTACT METALLIZATION Anode: > 50,000 A Aluminum

marking z7

Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4

81g diode

Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
Contextual Info: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232

BZX 12v zener diode

Contextual Info: Zener Diode BZX84C MMBZ5221B - 5256B 4 Volt Type BZX 84 T ype M M BZ Part M arkings BZX MMBZ " m iniR eel O rder N um ber 500pcs. IniniB ag 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232 72-5234 72-5235 72-5236 72-5237 72-5239 72-5240

BZX 5V6

Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
Contextual Info: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)

Contextual Info: Diodes SMD Type 350mW Surface Mount Zener Diodes BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

marking Z6

Abstract: Z6 DIODE ESD05
Contextual Info: ESD05 VOLTAGE:5V Elektronische Bauelemente 120W Transient Voltage Suppressors Diode RoHS Compliant Product SOD-523 FEATURES * 120 Watts peak pulse power t = 8 / 20 µs * Small package for use in portable electronics * Suitable replacement for MLV’s in ESD protection