Z5 MARKING Search Results

ICA10

Abstract: YTS2907A 150fps
Contextual Info: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency

MOELLER Z00 10

Abstract: dil3m80 ZEV-XSW-820 ZEV-XVK-20 DIL3AM85 EMT6DB DIL4M115 3AM85 SDAINL3M125 DIL4AM145
Contextual Info: Moeller HPL0211-2001/2002 06/001 Overload relays, motor-protective relays Technical overview Page 06/002 System overview 05/006 Overload relays, motor-protective relays ZE, Z00 overload relays Z1, Z5 overload relays ZW7 current transformer-operated overload relays

Contextual Info: •K ? u a if f lu 'J ijg i S \ j! a ^ iiu ia v a ^ K a / a «g»-iTC H *g« 4 \ P \ B , 15 5 6 7 B 9 10 II IZ 13 14 15 16 17 IS lO ty a jO i i CH j Q i K a (* . 19 Z0 21 ZZ Z3 Z4 Z5 Z6 Z7 Z8 Z9 30 31 3Z 33 34 35 36 37 31 39 .M 3 36 x r z 5 > 90 - 0 I Standard contact after installation to PC board

Contextual Info: •K ? u a i f f l u ' J i j g i S \ j ! a ^ i i u i a v a ^ K a / a «g»-iTCH*g« 4 \ P \ B, 15 .M 5 6 7 B 9 10 II IZ 13 14 15 16 17 IS 19 Z0 21 ZZ Z3 l O t y a j O i i CH j Q i Z4 Z5 Z6 Z7 Z8 Z9 30 31 3Z 33 34 Ka 35 36 37 31 (* . 39 3 36 x r z 5 > 90

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

BZX 5V6

Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
Contextual Info: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

5AW diode

Abstract: KWS10-15 KWS10-5 12v zener diode LAMBDA over Voltage CSA234 CSA950 KWS5-12 KWS5-15 KWS105
Contextual Info: KWS-SERIES UMBDAA DENSEI-LAMBDA Single output 5W ~15W AC-DC on-board type power supply Model name KWS 5-5 1- Nomina! output voltage Nomina! output power Name ol series • Features • C€ marking Low Voltage Directive C€ (Low Voltage Directive)

MRF282

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

transistor z2b

Abstract: 1690 MARKING E2B marking Z0B F100K SY100S370 SY100S370FC SY100S370FCTR SY100S370JC Marking Z7
Contextual Info: UNIVERSAL DEMULTIPLEXER/ DECODER Micrel, Inc. FEATURES SY100S370 SY100S370 DESCRIPTION • Max. propagation delay of 1200ps ■ IEE min. of –92mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B

Contextual Info: Document Number: MML20211H Rev. 0, 8/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT Low Noise Amplifier MML20211HT1 The MML20211H is a single-stage Low Noise Amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for

Contextual Info: ZENER DIODES SO T-2 3 /T O -2 3 6 AB ‘TMPZ’ ZENER DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Device Min. Norn. Max. Leakage Current Zener Im pedance @ >ZT Max Marking V (V) (V) (mA) (HA) (V) (£ 2 ) @ 'zr (mA) Pinning Type TMPZ5229

J293

Contextual Info: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s

Contextual Info: Freescale Semiconductor Technical Data MMG3002NT1 Rev. 3, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,

BFS36

Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

N/A9M07

Contextual Info: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from

Contextual Info: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4

mrf8372

Contextual Info: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

d2166

Abstract: marking _TH PM5712 stm stt 128 DDD115T PM5312 PM5343 PM5344 PSL4
Contextual Info: S TANDARD PRODUCT PMC P M C -S ie rra , Inc. ISSUES PM5344 SPTX SONET/SDH PATH TERMINATING TRANSCEIVER FEATURES • Monolithic SONET/SDH Path Terminating Transceiver that terminates the path overhead of one or three STS-1 AU3 paths or a single STS-3c (AU4) path.

MRF18060A

Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from