Z30F Search Results

100C

Abstract: HS14 Z30F Z40F Z50F
Contextual Info: Z30F Z40F Z50F HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 200nS RECOVERY VRWM = 3000-5000V = 800mA AXIAL LEADED = 200nS T,RR ,200±.015 5.08±.38 .250±.015_ (6.35±.38) in.(mm) i L T •060±.003 (1.52±.06) .40(10.16)Min. ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS

Contextual Info: Z30FG Z40FG Z50FG HIGH VOLTAGE RECTIFIERS 200nS RECOVERY AXIAL LEADED HERMETICALLY SEALED VRWM = 3000-5000V I = 1.0A T rr in. mm .350(8.89) — Max. = 2 0 0 n S - 1.00(25.4) — — -i Min. I .215(5.5) Max. .040±.003 (1.02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

100C

Abstract: Z30F Z40F Z50F
Contextual Info: b3E J> =îSmflSM DGDGM23 TTÔ ivm Z30F Z40F Z50F HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 200nS RECOVERY V0LTA6E MULTIPLIERS AXIAL LEADED INC V,RWM 3000-5000V 800mA 200nS RR in. mm •200±.015 (5.08±.38) ■250±.015 (6.35±.38) ■060±.003 (1.52±.06) .40(10.16)

1N6515US

Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,

LA1503

Abstract: SFU455 sfu455b SO47 C31002
Contextual Info: 32293HO*^S57NOrftTSO&#39;l'Jll &-B$7#DS74kj 8-W284-X9 HaW34.1/7 o -< C L M O ^ :> X ! > Í Í 111?S>S> Y n ' > NC5- o W # # 10 o * - 10 o ^ o 2 - > > o o c¿ i »o e* * > *> 5 *4 il X . ^ ¡r I \ v V Cí « 2 ^ ”S? A •\ A A S V S V V fea* « > 0 > w oí 1 •