Z3 TECHNOLOGY Search Results

HMS3224M3

Abstract: HMS3224Z3
Contextual Info: HANBit HMS3224M3/Z3 HAN SRAM MODULE 768KBit 32K x 24-Bit BIT Part No. HMS3224M3, HMS3224Z3 GENERAL DESCRIPTION The HMS3224M3/Z3 is a high-speed static random access memory (SRAM) module containing 32,768 words organized in a x24-bit configuration. The module consists of three 32K x 8 SRAMs mounted on a 56-pin, singlesided, FR4-printed circuit board.

Contextual Info: GOLDSTAR TECHNOLOGY I N C / I GST 4D2A757 GGG3Mt11 1 47E D T-V6-Z3 -/5' GoldStar GMM781000S-60/70/80/10 1,048,576 WORDS X 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of

S4113

Contextual Info: 14E D INTEGRATED DEVICE • 4025771 0003377 2 ■ CMOS SYNCHRONOUS STATIC RAM W / TRANSPARENT OUTPUTS AND OE 64K 16Kx 4-BIT ADVANCE INFORMATION IDT 61595S IDT 61595L T-V4-Z3 -ID FEATURES: DESCRIPTION: • 16K x 4-Bit Organization • High-speed Cycle Time

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

ICE 47E

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E ]> 402 A7S 7 000 33^5 GoldStar □ • GST T-V6-Z3-/5 GM71C1000/L 1,048,576 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C1000/L is the new generation dynamic RAM organized 1,048,576 x 1 Bit. GM71C1000/L has realized higher density, higher performance

B2020

Abstract: B2021 t523
Contextual Info: BIPOLAR INTEGRATED 1451454 □□□□tab T • BIT T'S~3~Z3-eÇ- 47E D Bipolar integrated Technology Inc. HIPPI Interface Chip Set 32-Bit B2020 - HIPPI Source Interface Chip B2021 - HIPPI Destination Interface Chip The B2020 and B2021 are BIT’S implementation of the single chip Parallel HIPPI Source and Destination Interfaces.

B480F

Abstract: diode B480
Contextual Info: SIEMENS AKTIENGESEL LSCHAF M7E D • 6235b05 DDE7135 7 H S I E 6 SIEM ENS RED SUPER-RED YELLOW GREEN LR LS LY LG B480 T-4Ì-Z3 B480 B480 B480 RECTANGULAR LED LAMP & E FEATU RES * Red Partly Diffused Lens, LR B480 and LS B480 Yellow Partly Diffused Lens, LY B480

MWS5101EL3

Abstract: MWS5101EL3X MWS5101DL3 MWS5101ADL3
Contextual Info: HARRIS^SEm COND MbE D SECTOR 430E271 003^047 b IHAS MWS5101 MWS5101A T-~4 fc~Z3 ' 0 y HARRIS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4 bit static

Contextual Info: L O GI C D E V I CE S / INC IbE D SSbSTOS ODGBSSb b 16Kx 4 Static RAM L 7 C 1 6 4 / 1 6 5 / 1 6 6 T-V é -Z3-IO Features Description □ 16K by 4 Static RAM with common I/O The L7C164, L7C165, and L7C166 are high-performance, low-power CMOS static RAMs. The storage cells are

Contextual Info: m u R ala P0Z3 3MM CHIP SMT TRIMMING POTENTIOMETER NEW P R O D U C T RELEASE G -01-C -1 INTRODUCING THE POZ3 3MM SMT CHIP TRIMMING POTENTIOMETER T h e new PO Z3 S eries is the first a va ila ble 3m m surface m ount trim m in g p o te n tio m e te r utilizing a carb on resistive

V53C466

Abstract: DQQ0400 vitelic V53C466 lawo M54510
Contextual Info: VITELIC VITELIC CORP ifl D ÌJ ^505310 DQQ0400 7 T-V6-Z3-/7 V 5 3C 4 66 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT S TA TIC CO LUM N CMOS DYN A M IC RAM 70/70L 8 0 /8 0 L 10/10L Max. RAS Access Time, t ^ 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tCAA

audio transformer 600ohm

Abstract: delay echo circuit diagram 20111 L9002VX PIN DIAGRAM OF RJ11 Base Station TDD rj11 connection diagram
Contextual Info: 20111 Stevens Creek Blvd., #260 Cupertino, CA 95014. U.S.A. Tel: 408.253.3883 Fax: 408.253.6630 Lanwave Technology, Inc. System Application Note AN-5 Telco interface design for echo elimination L9002VX / VX2 Code Division Spread Spectrum Telephone Chip Revision:

hm62864

Contextual Info: HM62864 Seríes 65536-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-255B Z Rev. 2.0 Jul. 4, 1995 Description The Hitachi HM62864 is a CMOS static RAM organized 64-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ¡xm Hi-CMOS process technology. It offers low

Contextual Info: DCMKP 1.1/9.0 mF Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 9000 F Rated DC voltage UNDC 1100 V ± 10 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD

Amplifier SOT-89 c4

Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

135-869

Abstract: ML200C transistor a114 diagram
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

Z5 1512

Abstract: C0805C209J5GAC
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

L0619

Contextual Info: HM62W8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-641 Z Preliminary Rev. 0.0 Oct. 3, 1996 Description The Hitachi HM62W8512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (im Hi-CMOS process technology. The

Contextual Info: Integrated Device Technology, Inc. 128K x 36, 256K x 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, PIPELINED OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT PRELIMINARY IDT71V2576 IDT71V2578 IDT71V3576 IDT71V3578 FEATURES: DESCRIPTION: • 128K x 36, 256K x 18 memory configurations

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low