Z1A10 Search Results

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 jJ.m CMOS process

sram 681000

Abstract: KM681000ELG-5L KM681000
Contextual Info: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

acs 08 5s

Contextual Info: HM62W16255H Series 262114-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-751 Z Preliminary Rev. 0.0 Feb. 27, 1997 Description The HM62W16255H is an asynchronous high speed static RAM organized as 256-kword x 16-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 }J.m CMOS process and high speed circuit

Contextual Info: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-415A Z Rev. 1.0 Dec. 25, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 |im CMOS process and high speed circuit designing

Z6A405

Abstract: Z4A205 Z6A155 Z4A105 Z5A205 Z2A394 Z6A27 Z4A104 Z2A106 Z6A205
Contextual Info: ELPAC E L E K S / ELPAC CI1PN b ? E J> 32^573^ OOODSSS S4fl METALLIZED POLYESTER Z Series ►Excellent; General-Purpose Capacitor ►Best Volumetric Efficiency ►Lowest Cost ►Excellent Dielectric Strength Performance Characteristics Temperature Range: Dissipation Factor @ +25°C: