Z11 MARKING CODE Search Results

Contextual Info: Surface Mount Zener Diodes 350mW Zener Voltage @ IZT Marking Code Part No. MMBZ4695 MMBZ4696 MMBZ4697 MMBZ4698 MMBZ4699 MMBZ4700 MMBZ4701 MMBZ4702 MMBZ4703 MMBZ4704 MMBZ4705 MMBZ4706 MMBZ4707 MMBZ4708 MMBZ4709 MMBZ4710 MMBZ4711 MMBZ4712 MMBZ4713 MMBZ4714 MMBZ4715

Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O

transistor MARKING NC KRC

Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
Contextual Info: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Z921

Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
Contextual Info: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

BZX84 X8

Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
Contextual Info: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

Z11 Marking Code

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

Z11 Marking Code

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram

ZENER DIODE z91

Abstract: Willas Z68 diode Z47 z39 marking DIODE z91
Contextual Info: WILLAS ZS4728A THRU ZS4764A 1WATT SURFACE MOUNT ZENER DIODE SMA-LS PACKAGE Pb Free Product FEATURES * Low profile package * Small size * Low inductance * High temperature soldering : 260°C /10 seconds at terminals 0.196 4.9 0.180(4.5) 0.012(0.3) Typ. * RoHS product for packing code suffix "G"

Contextual Info: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • • • • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features • • • • • • • • Functional Block Diagram

MHVIC915 equivalent

Abstract: MHVIC915NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

J40-5

Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

GRM40X7R103J050BD

Abstract: J422 RM73B2AT104J j392 FET J134
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

Murata grm40

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

MW5IC2030NBR1

Abstract: A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 8, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage

J703

Contextual Info: Document Number: MHVIC915R2 Rev. 8, 8/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to

marking J6 transistors

Abstract: J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to

z15 Diode glass

Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Contextual Info: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren