Z10 CAP Search Results

zener diode z10

Abstract: z10-130 Z10-200 Z10-150 z1031 zener z10 Z10-160 Z10-110 Z10-120 Z10-140
Contextual Info: Z10-110 THRU Z10-330 FRONTIER ELECTRONICS CO., LTD. 1WATT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 1.0 25.4 MIN .034(0.9) .028(0.7) .205(5.2)

B84320-Z10-H35

Abstract: B84320-Z10-H33
Contextual Info: EMP Protection Units B84320-Z10-H33 Analog Communication and Control Lines B84320-Z10-H35 EMP-Schutzeinheiten General The EMP protection unit is sequenced, i.e. to use simultaneously the benefits of inert-gas-filled surge arresters extremely high surge capability and of varistors (fast response). They are isolated

SNP-Z101

Abstract: SNP-Z103 SNP-Z109 Z109 snp-z107 Z107 SNP-Z10T Z103 SNP-Z10 SNPZ10
Contextual Info: General Purpose Universal PFC + 100W SNP-Z10 Series Description: Open frame size of 3" X 5" has become an industrial standard for more than 10 years. The power density is around 2.0 watts/ cu.in. at very beginning and then stays at 3.0 watts/cu.in. for a

Contextual Info: Z10-110~390 Description Mechanical Dimensions JEDEC D0-41 1.00 Min. .080 .107 DO-41 .031 typ. Dimensions in inch eatures ¬ For surface mounted applications ¬ 1.0 W power dissipation ¬ Ideally suited for automated assembly processes ¬ Excellent Clamping Capability

Contextual Info: 8798_AA's Vectron 05/30/02 3:12 PM Page 85 Frequency Translation Products FX-104 Features 8! A1P FC- In! D 4 ut! z10 FX- 44 MH Hz - O 19. .08 M 622 • • • • • 6 002 Output frequencies up to 777.6 MHz Low Jitter PECL Output Locked to specified Input frequency, e.g. 8 kHz

TRANSISTOR Z10

Abstract: h8 ss 125 transistor LTZ1000 LT 745 S 8 pin ic lm 745
Contextual Info: _ LTZ1000/LTZ1000A TECHNOLOGY Ultra Precision Reference L U IL / \ k D € S C R IP T IO n F€ A TU R € S T h e LT Z10 0 0 and LT Z 10 0 0 A are ultra stable tem perature • 1.2/iVp-p N o is e controllable references. Th e y are designed to provide 7 V

BUZ10M

Abstract: BUZ10
Contextual Info: 89D 7 8 2 0 0 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F> AT MOTOROLA D E |t.3 b ? a S 4 GD7fl20Q - r - ß ? - // Order this data sheet by BUZ10/D 1 S E M IC O N D U C T O R TECHNICAL DATA BU Z10 P o w e r F ield E ffe c t T r a n s is t o r N-Channel Enhancement

philips ph 116 capacitors

Abstract: Philips electrolytic 116 Philips capacitor 116 mbc182 philips ELECTROLYTIC capacitors RLL116 RML MARKING CODE Z100 philips 116 capacitors 116 RLL capacitors
Contextual Info: Philips Components Product specification Non-solid Al - electrolytic capacitors Radial Long Life RLL 116 FEATURES • Polarized aluminium electrolytic capacitors, non-solid handbook, 4 columns • Radial leads, cylindrical aluminium case, all-insulated light blue

MBC182

Abstract: 116 RLL capacitors 116 RLL
Contextual Info: BCcomponents DATA SHEET 116 RLL Aluminum electrolytic capacitors Radial Long Life Product specification Supersedes data of January 1998 File under BCcomponents, BC01 2000 Jan 18 BCcomponents Product specification Aluminum electrolytic capacitors Radial Long Life

philips ph 116 capacitors

Abstract: philips ph 116 capacitor Philips electrolytic 116 MBC182 philips 116 capacitors Philips capacitor 116 MGB146 philips ELECTROLYTIC capacitors philips ELECTROLYTIC capacitors marking code group RML MARKING CODE
Contextual Info: Philips Components Product specification Aluminium electrolytic capacitors Radial Long Life 116 RLL FEATURES • Polarized aluminium electrolytic capacitors, non-solid handbook, 4 columns • Radial leads, cylindrical aluminium case, all-insulated light blue

Contextual Info: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The TC511664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed

A302 x6

Abstract: TC5116
Contextual Info: 65,536 W O R D x 16 BIT D Y N A M I C R A M DESCRIPTION T h e T C 5 1 1 6 6 4 J / Z i s t h e n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 6 5 , 5 3 6 w o r d s by 16 bi t s. The T C 5 1 1 6 6 4 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s w el l a s a d v a n c e d c i r c u i t

Contextual Info: 6 5 ,5 3 6 W O R D X 16 BIT DY NAM IC RAM * T his is advanced inform ation and specifica­ tions are subject to change w ithout notice. DESCRIPTION The TC511665J^. is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

7A07

Abstract: w9109 jcs5 tc511665
Contextual Info: 65,5 3 6 W O RD X 1 6 BIT D Y N A M I C R A M T his is advanced information and specifica­ tions are subject to change without notice. * D ES CR IP TION The T C 5 1 1 6 6 5 J^ . is the new generation dynamic RAM organized 65,536 words by 16 bits. The T C 511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

murata npo

Abstract: 32M marking z10 marking Z10.0 marking z10
Contextual Info: CERAMIC TRIMMER CAPACITORS CHIP TRIMMER CAPACITORS TZV02/TZVX2 SERIES ^ muffata //w w a tc r in Electronics The latest generation o f chip trim m ing capacitors uses M urata Electronic's tech nolog y advancem ents in m onolithic construction to ob tain an ultra stable,

diagram 3 phase heat press

Abstract: SSR G SG-24F SF92 SSR 131
Contextual Info: SG-24F THREE PHASE SOLID STATE RELAY 10 THRU 25 AMPS 36 TO 440 VRMS FEATURES • • • • • • • • Photo isolation LED status indicator Up to 800V blocking voltage Both “Zero Voltage” and phase controllable “Random” Switching versions High surge capability

SG-24F

Abstract: diagram 3 phase heat press ssr diagram
Contextual Info: SG-24F THREE PHASE SOLID STATE RELAY 10 THRU 25 AMPS 36 TO 440 VRMS FEATURES • • • • • • • • Photo isolation LED status indicator Up to 800V blocking voltage Both “Zero Voltage” and phase controllable “Random” Switching versions High surge capability

Z80 INTERFACING TECHNIQUES

Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

TC514100

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514100J/Z-80, TC5141OOJ/Z-1Û DESCRIPTION The TC514I00J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and

Z80 ADC

Abstract: TC514100 Z80 INTERFACING TECHNIQUES uras 14 Z80 FIO UAA 180 dot mode
Contextual Info: TOSHIBA MEMORY E lectronic C omponents B usiness S ector 4 ,1 9 4 ,3 0 4 WORD X 1 BIT DYNAM IC RAM T C 514 1 0 0 J /Z -8 0 T C 514 1 OOJ/Z-10 DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

TC514400

Abstract: TCWP
Contextual Info: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4

Contextual Info: 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514 1 02J/Z-80, TC514102J / Z - 1C DESCRIPTION T h e T C 5 1 4 1 0 2 J / Z is the n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 4 , 1 9 4 , 3 0 4 w o r d s b y 1 bit. T h e T C 5 1 4 1 0 2 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y as w e l l

Contextual Info: TOSHIBA _ MEMORY _ E lectronic C omponents B usiness S ector _ 4,194,304 W O R D X 1 B IT D Y N A M IC RAM T C 5 1 4 1 0 1 J/ Z -8 0 T C 5 1 4 1 0 1 J / Z -1 0 DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1