YD 1048 Search Results
YD 1048 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 50012-1048JLF | Amphenol Communications Solutions | High Pin Count back plane connectors, Header, Vertical 3 Row 0 Guides, Solder tail, 48 Positions | |||
| 90311-048LF | Amphenol Communications Solutions | Crimp-to-Wire Housing, Double Row, Pol. w/Latch, 48 Position | |||
| 54242-110482050LF | Amphenol Communications Solutions | BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 48 Positions, 2.54mm (0.100in) Pitch. | |||
| 65801-048LF | Amphenol Communications Solutions | Clincher™ Flex Connectors, Receptacle Assembly, Single Row, 19 Positions, 2.54mm (.100in) Pitch. | |||
| 51939-1048LF | Amphenol Communications Solutions | PwrBlade®, Power Supply Connectors, 100S Right Angle Header. |
YD 1048 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Casio 1026
Abstract: AD512 HSPPAR
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tbp9l03i-128i-176i-192+6 | |
LC371000SP
Abstract: lc371000 CCA1 A2 SM20L
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en3k5086alc371000spsm-10/lc371000spsm-20lv+5 | |
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Contextual Info: TO SH IBA TC55V1001 AF/AFT/ATR/AST/ASR-85,-10,-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as |
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tc55v1001af/aft/atr/ast/asr-85072-wordtc55v1001af/aft/atr/ast/asr+3 | |
M5M418165
Abstract: M5M4181 M5M418165BJ IS3015 M5M418165B m5m418
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m5m418165bj16777216-bit1048576-wqrd16-bit+6 | |
HM511001-12
Abstract: HM511001
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1048576-wordhm511001576-word18-pin+3 | |
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Contextual Info: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484-15 F e b ru a ry 1 9 8 8 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10484 is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage |
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16384-bitmbm10484-1510484-1s | |
HM511000
Abstract: dynamic ram 8 bit hm511000 HM511000P M511000 HM511000-12 HM511000-10 HM511000JP-12 DG 402 rp HM511000ZP-12 ir 2210 ic
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hm5110001048576-word576-word18-pin+10 | |
yd 1048
Abstract: E14YR AFPX-E16 AFPX-E14YR
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e14yrfp0382fpx300i/ofp0i/o382+4 | |
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Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S 00 AD LTR DATE DESCRIPTION EC 0G3C 0 0 3 2 05 DWN APVD BSV DLS 26FEB 05 5.99 [.157] A -X- 1.27 1V 5 |
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26febshort4-6-93 | |
transistor f422 equivalent
Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
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transistor f422 equivalenttransistor f422thomson crt colour tv schematic diagramz80 ef9345+6 | |
TMS29F010Contextual Info: TMS29F010 131072 BY 8-BIT FLASH MEMORY S M J S 8 4 0 - N O VEM BER 1997 • Single Power Supply 5 V ± 10% • • Organization . . . 131072 by 8 Bits Eight Equal Sectors of 16K Bytes - Any Combination of Sectors Can Be Erased - Any Combination of Sectors Can Be |
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tms29f010smjs840-smjs840r-pqcc-j32+1 | |
m5m28f102jContextual Info: PRELIMINARY M5 M28F102P,FP,J,VP,RV-10,S-U12S-i 5S'S 1048576-BIT 65536-WORD B Y 16-BIT C M O S F L A S H M EM Q R V DESCRIPTION PIN CONFIGURATION (TOP VIEW The M itsubishi M 5 M 2 8 F 1 0 2 P ,F P J,V P JIV are high-speed |
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m28f102prv-1012s-i1048576-bit+5 | |
thomson CRT COLOUR TV SCHEMATIC DIAGRAM
Abstract: z80 ef9345 SS 1091 asn EF9367 transistor f422 equivalent marking codes transistors SSs processor 8035 practical circuits TDA 9345 EF9345FN EF7910
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thomson crt colour tv schematic diagramz80 ef9345ss 1091 asnef9367+6 | |
N806
Abstract: Material density CDA 195 BL1-01 philips FW21 MHA301 Hall Effect 3 pin ugn 510H LQFP80 SAA9750H ugn2
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10-bit001157en806material density cda 195+8 | |
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V02630
Abstract: 2051 16 pin DOT MATRIX 2088 2051 datasheet O101 SED1743 SED1748D0B 97um DOT MATRIX 8*8 2088 DOT MATRIX 2088
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sed1748160-bitsed1743d1748d+9 | |
l5442Contextual Info: TMS29LF008T, TMS29LF008B 1048576-BYTE BY 8-BIT FLASH MEMORIES I * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • Organization: 1 024K Bytes x 8 Bits • Array Blocking Architecture - One 16K-Byte Protected-Boot Sector Two 8K-Byte Parameter-Sectors |
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tms29lf008ttms29lf008b1048576-bytesmjs846+4 | |
fp1 PLC programming
Abstract: FP0-E32RS fp3 matsua Panasonic PLC FP communication marking code c14r fp3 matsushita AFPX-C30TD c14t EN61131-2 FP10SH
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afpx-c14afpx-e16arct1b287e200705-5yt+10 | |
ld25 cvContextual Info: SMJ320C40, TMP320C40 DIGITAL SIGNAL PROCESSORS SGUSG17C - OCTOBER 1993 - REVISED SEPTEMBER 1998 I I I I I • • • • SMJ: QML Processing to MIL-PRF-38535 SM: Standard Processing TMP: Commercial Level Processing TAB Operating Temperature Ranges: - M ilitary M -55°C to 125°C |
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smj320c40tmp320c40sgusg17cmil-prf-38535+7 | |
idq10Contextual Info: MITSUBISHI LSIs M6MGB/T162S4BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi |
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m6mgb/t162s4bvp216-bit16-bit304-bit+5 | |
FAUCET SENSOR CIRCUiTContextual Info: fe»*-.- i > ú it+* *«• lil' '•> *-3 * lv [llMlJWIjlIjlJIill A s m a ll e y e contributes for energy saving, comfort, convenience and safety O ur m o tio n s e n s o r is b ased on k n o w -h o w d ev e lo p e d o ve r m an y years, in c lu d in g o u r p ro p rie ta ry te c h n o lo g y fo r le n s e s , d e te c to r |
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rm1601faucet sensor circuit | |
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Contextual Info: MITSUBISHI LSIs M6MGB/T08S2ATP 8388608-BIT 1 M x 8-BIT/512k x 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2097152-BIT (256k x 8-BIT) CMOS STATIC RAM MCP (Multi Chip Package) FEATURES DESCRIPTION The MITSUBISHI M6MGB/T08S2ATP is a Multi Chip Package (MCP) that contents 8-Mbit Flash memory and |
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m6mgb/t08s2atp8388608-bit8-bit/512k16-bit+5 | |
12697
Abstract: 80MHZ PM7326
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pm7326pmc-1991454pmc-198122412697+1 | |
M6MGB/T166S4BWG
Abstract: Mitsubishi Stacked CSP M6MGT166S4
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m6mgb/t166s4bwg216-bit16-bit304-bit+5 | |
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Contextual Info: MITSUBISHI LSIs M6MGB/T160S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES |
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m6mgb/t160s2bvp216-bit16-bit152-word+4 | |