Y PARAMETERS OF TRANSISTORS IN HIGH FREQUENCY Search Results

BFG67

Abstract: Y parameters of transistors transistor marking v12 ghz db 97-0310
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PINNING FEATURES • High power gain DESCRIPTION PIN • Low noise figure BFG67 • High transition frequency • Gold metallization ensures excellent reliability.

gummel

Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
Contextual Info: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands

J305

Contextual Info: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current

2N3418

Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:

harris 8 lead cerdip DIMENSIONS

Contextual Info: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

Contextual Info: Pfitttl G £ C P L E S S E Y ADVANCE INFORMATION DS3628 • 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fr of 3GHz and wideband noise

Contextual Info: PQtm GEC P L E S S E Y ADVANCE INFORMATION DS3627 • 1.3 SL3145 1,6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The

j300

Abstract: J300D
Contextual Info: MOTOROLA Order this document by J300/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifier N-Channel — Depletion J300 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDG -25 Vdc Gate Current >G 10 mA Total Device Dissipation @ Ta = 25°C Derate above 25°C

Contextual Info: MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS

mj15020

Abstract: MJ15021 MJ15020G MJ15021G
Contextual Info: MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS

MJ15020

Contextual Info: MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS

D44VH

Abstract: D44VH10 MOTOROLA TRANSISTOR D45VH D45VH10
Contextual Info: MOTOROLA Order this document by D44VH/D SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.

MJ-15016

Abstract: TRANSISTOR mj15020 MJ-15020 2N3055A MJ15015 MJ15016 MJ15018 MJ15019 MJ15020 MJ15021
Contextual Info: MOTOROLA Order this document by MJ15018/D SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 See 2N3055A Advance Information NPN MJ15018 Complementary Silicon Power Transistors MJ15020* PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers.

Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

lm 7803

Abstract: ED-46
Contextual Info: IEEE BCTM 3.3 Improved Modeling of Output Conductance and Cut-off Frequency of Bipolar Transistors J.C.J. Paasschens*, W.J. Kloosterman*, R.J. Havens*, and H.C. de Graafft "Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands

Contextual Info: GEC PLESSEY S [ M I O M U C I O K S ADVANCE INFORMATION SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical ( t of 3GHz and wideband noise

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .

MJ15020

Abstract: MJ15021
Contextual Info: ON Semiconductort NPN MJ15020 * PNP * MJ15021 Complementary Silicon Power Transistors . . . designed for use as high frequency drivers in Audio Amplifiers. *ON Semiconductor Preferred Device • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.

MJ1502

Abstract: MJ150 MJ15018 MJ15019 MJ15020 MJ15021 MJ-15018
Contextual Info: ON Semiconductort NPN MJ15018 Complementary Silicon Power Transistors MJ15020 * PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

MJW0281A

Abstract: MJW0302A
Contextual Info: MJW0281A NPN MJW0302A (PNP) Preferred Devices Advance Information Complementary NPN−PNP Silicon Power Bipolar Transistors http://onsemi.com The MJW0281A and MJW0302A are PowerBase t power transistors for high power audio. • Designed for 100 W Audio Frequency Applications