Y 431 TRANSISTOR Search Results

h a 431 transistor

Abstract: LH 431 IC 431 1N3913 431 transistors
Contextual Info: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators

2N6431

Abstract: 2N6432 2N6433 2N6430
Contextual Info: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

h a 431 transistor

Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

transistor 431t

Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

6MBP50RTA060

Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
Contextual Info: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A

transistor w 431

Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
Contextual Info: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .

transistor 431 c

Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
Contextual Info: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity

Contextual Info: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).

BF451

Abstract: BF450 transistor BF451 Bp451
Contextual Info: N AMER PHILIPS/DISCRETE b'ÏE D 1^53^31 □G E 7 b tì4 STS J BF450 BF451 HF SILICON PLANAR EPITAXIALTRANSISTORS PNP transistors in a plastic envelope intended fo r HF and IF applications in radio receivers, especially fo r m ixer stages in AM receivers and IF stages in AM /FM receivers w ith negative earth.

IRF 3302

Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited

2SC2673

Abstract: 2SC4040 2sa881
Contextual Info: / I ransistors Is "7 2SC 2673 2S C 4040 2SC2673/2SC4040 Power Amp. Epitaxial Planar NPN Silicon Transistors • W Fi \fi± |H /D im en sio n s Unit : mm 1) Pc =600m W 2) VCE(sat)=150m V Typ (at Ic / I b = 500mA/50mA) ¿r iS l'o 3) 2SA881 /2SA15601 =l > Z f') „

2SC2673

Abstract: 2sa881 HM431
Contextual Info: ROHM CO LTD 40E D 7ÖSäcn ci QGÜS7ST 7 BRHil //Transistors 2SC2673/2SC4040 T - 2 7 - iÇ - — 2 S C 2 3 7 3 2 S v 4 v 4 0 v '^ > h 7 > y 7 ^ 4 ,tt^JiH lIiffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors 1ftffivfi& Ej/Pim ensions Unit : mm

ha 431 transistor

Abstract: PZTA44 PZTA45
Contextual Info: q. „ , „ . • Philips Semiconductors bbSB'lBl 00EL017 bbT H A P X N AMER PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product apBrtflratlnr. b7E D — — PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a

BUV78

Abstract: BUV79 be35v 62901-B
Contextual Info: BUY 77, BUY 78, BUY 79 NPN Silicon power transistors P re lim in a ry d a ta BUY 77, BUY 78 and BUY 79 are triple-diffused NPN silicon power transistors in a case 3 A 2 DIN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistors are particularly designed for use as high-speed power switches at

transistor buv 90

Abstract: BUV18
Contextual Info: rz7 Ä 7# SCS-THOMSON BUV18 BUV19 NPN HIGH CURRENT SWITCHING TRANSISTORS • HIGH EFFICIENCY SW ITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON T O -3 D E S C R IP T IO N High current, high speed transistors suited for low voltage applications : high efficiency converters,

Low Noise Zener Diode

Abstract: 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524
Contextual Info: 2848352 AM DIODE BE | 2 0 4 3 3 5 5 TRANSISTOR CO DOGGl t M 84D INC 00 164 D T *• û I M f LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA " I . \ W Green " . I. TM L i n e MGSF1P02LT1 Motorola Preferred Device Low rDS on) Sm all-Signal RMOSFETs TMOS Single P-Channel Field Effect Transistors

sd 431 transistor

Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
Contextual Info: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS

transistor sl 431

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC4245 U n it in m m TV TUNER, UHF M IXER A PPLICATIO NS. V H F -U H F BAND RF AM PLIFIER APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARA CTERISTIC SYMBOL RATING U N IT VCBO VCEO Ve b o ic Ib I’C 30 15 3

LM431ACM3

Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
Contextual Info: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any

HIGH POWER DIODE

Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Contextual Info: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor

2sc3331 transistor

Abstract: 2SA1318 2SC3331 PJ 431
Contextual Info: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318