XP1601 Search Results

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification M Di ain sc te on na tin nc ue e/

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: Composite Transistors XP01601 XP1601 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) (0.425) 0.20±0.05 4 1 0.2±0.1 5˚ M Di ain sc te on na tin nc ue e/ d 5

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: Composite Transistors XP01601 XP1601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.

2SB709A

Abstract: 2SD601A XP1601
Contextual Info: Composite Transistors XP1601 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.2±0.05 For general amplification 2.1±0.1 0.425 1.25±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ●

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) 0.20±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 Th an

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: Composite Transistors XP01601 XP1601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

XP1201

Abstract: transistor d 2213 XP1212 XP1114
Contextual Info: S Mini Type 5-pin Package Outline Transistors mn m - v • V- <X T ^ 7 h 5 > v * 2 4' ¿f CD1 ■ Û i 11ZM Æ U £ B m v ir - v T to ■ ft £ • ' J 7 P - g l i a f t it • 1m^mtc >>50%<»nmmno • 8 *x -1 ° > s a iftn s w iic w iS tfB ifiio •ffiiil£ 0 .2 iiim (fö * 0 .3 n > m )ll£ M U « A,/£ ^ 'J y vORSitlC