XP1017 Search Results

150AVP

Abstract: caesium 56AVP Photocathode 56DUVP 150CVP 150UVP 56TVP 56TUVP XP1017
Contextual Info: Photosensitive devices photomultipliers Type No. book 2 part 3 Photocathode Diameter Surface mm Description Av. A nod e Sensitivity Sensitivity at Vb (A/lm) <kV) Cathode Sensitivity No. of Stages (/iA/lm) Time Characteristic Rise Time (ns) 250 1.8 65 10

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

P1017

Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 32H2BA0070
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

P1017

Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 ts333
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

XP1017-BD

Abstract: P1017 P1017-BD DM6030HK XP1017-BD-000V XP1017-BD-EV1
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD January 2010 - Rev 23-Jan-10 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com