32H2BA0070 Search Results

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 32H2BA0070 Features Chip Device Layout tio n Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

p1017

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

84-1LMI

Abstract: P1017
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

P1017

Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 32H2BA0070
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

P1017

Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 ts333
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

XP1017-BD

Abstract: P1017 P1017-BD DM6030HK XP1017-BD-000V XP1017-BD-EV1
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD January 2010 - Rev 23-Jan-10 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing